Effect of barrier height on spectral characteristics of GaAs/AlxGa1-xAs QWIP
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摘要: 为了确定束缚态到准束缚态工作模式QWIP响应波长与势垒高度关系,采用金属有机物化学气相沉积法生长制备势垒高度不同GaAs/AlxGa1-xAs QWIP样品,采用傅里叶光谱仪对样品进行77 K液氮温度光谱测试。结果显示1#,2#样品峰值响应波长与据薛定谔方程得到峰值波长误差为15.6%,4.6%。结果表明:引起量子阱中子带间距离逐渐扩大与峰值响应波长蓝移的根本原因是势垒高度的增加。高分辨透射扫描电镜实验结果表明量子阱材料生长过程精度控制不够及AlGaAs与GaAs晶格不匹配是造成1#样品误差较大的主要原因。说明调节势垒高度可实现QWIP峰值波长微调的目的。
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关键词:
- 量子阱红外探测器 /
- 高分辨透射扫描电镜 /
- GaAs/AlxGa1-xAs /
- 峰值波长
Abstract: A comprehensive analysis on the relationship between the barrier height and the peak wavelength of bound-to-quasi-continuum Quantum Well Infrared Photodetector(QWIP) was demonstrated, together with its effect on characterization of microstructure and macroscopic optic properties of the device-sample. The GaAs/AlxGa1-xAs infrared quantum well material was produced via the method of Metal Organic Chemical Vapor Deposition(MOVCD). Two sample devices with different Al content(0.23 and 0.32) was designed respectively and their corresponding spectral responses were measured via Fourier Transform Spectrometer at the temperature of 77 K. The experimental results shown that sample 1# and 2# are with the peak wavelengths of 8.36 m and 7.58 m, which present obvious difference to the theoretical results based on Schrodinger equation(9.672 m and 7.928 m, corresponding to errors of 15.6% and 4.6%, respectively). By analyzing the effect of Al atoms diffusion length, it is found that the decrease of Al content is the key effect which leads to sub-band narrow down and peak wavelength red shift. Meanwhile, by using the method of High Resolution Transmission Electron Microscopy(HRTEM), it is found that the strong error of sample 1# is mainly due to the crystal lattice mismatch between GaAs and AlGaAs, together with the unsatisfied precise control during the growth of quantum well material. Above analysis demonstrates that adjusting the Al content of barrier height is an effective method to turn the peak wavelength of QWIP.-
Key words:
- QWIP /
- HRTEM /
- GaAs/AlxGa1-xAs /
- peak wavelength
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