基于半导体激光器的脉冲整形技术

林平; 刘百玉; 缑永胜; 白永林; 王博; 白晓红; 秦君军; 朱炳利; 杨文正; 朱少岚; 高存孝; 欧阳娴

基于半导体激光器的脉冲整形技术

1.
中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;
2.
中国科学院大学,北京100049

基金项目:

国家自然科学基金（11205238）

详细信息

作者简介:
林平（1987- ），男，硕士生，主要从事激光脉冲整形方面的研究。Email：linping@opt.ac.cn；刘百玉（1964- ），男，研究员，主要从事超快电子学方面的研究。Email：liu-baiyu@163.com

林平（1987- ），男，硕士生，主要从事激光脉冲整形方面的研究。Email：linping@opt.ac.cn；刘百玉（1964- ），男，研究员，主要从事超快电子学方面的研究。Email：liu-baiyu@163.com

中图分类号: TN249

Laser pulse shaping technology based on semiconductor laser

1.
State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;
2.
University of the Chinese Academy of Sciences,Beijing 100049,China

摘要: 论述一种新的激光脉冲整形方法-利用任意形状的整形电脉冲直接驱动半导体激光器，产生与电脉冲形状一致的激光脉冲，作为高功率激光装置的种子光源。使用GaAs 场效应管作为开关器件，使用超宽带脉冲触发场效应管产生整形电脉冲，引入阻抗渐变微带技术克服了触发脉冲损耗对级联场效应管数量限制，将整形电脉冲脉冲宽度扩展到10 ns。以整形电脉冲直接驱动半导体激光器，可产生脉宽为10 ns，时域调节精度为330 ps 的任意整形激光脉冲。
- 激光脉冲整形 /
- GaAs场效应管 /
- 开关特性 /
- 半导体激光器 /
- 阻抗渐变微带技术
Abstract: Pulse shaping technique is of great significance for high power laser facility. In this paper, a new method used in laser pulse shaping system was proposed. An arbitrary waveform generator was fabricated to generate shaping electrical pulse. GaAs Field Effect Transistor (FET) has good ability of generating voltage-controlled current and on-off characteristic, while the semiconductor laser contains direct modulate characteristic. The unit-pulse was generated based on the on-off characteristic of GaAs FET, and then the arbitrary waveform electrical pulse was generated by stacking a set of unit-pulses. Impedance tapered micro-strip line was designed to maintain the consistency of each unit-pulse. The arbitrary waveform electrical pulse was used as shaping electrical pulse to modulate the semiconductor laser directly to realize the laser pulse shaping. With this method, a laser pulse waveform was generated with duration less than 10 ns, 330 ps time-domain adjustment. The experiment results show that the shaped laser pulse is determined only by shaping electrical pulse.
- laser pulse shaping /
- GaAs FET /
- on-off characteristic /
- semiconductor laser /
- impedance tapered micro-strip

[1]	Li Dong, Liu Baiyu, Liu Jinyuan, et al. Electrical pulse shaping system on the high power laser system [J]. Acta Photonica Sinica, 2005, 34(9):1304. (in Chinese)
[2]
[3]
[4]	Xia Yuxing, Cao Xia, Xie Xinlong, et al. ICF pulse formating system based on integrated optics [J]. Progress in Physics, 1999, 19(1): 105-106. (in Chinese)
[5]	Gou Yongsheng, Liu Baiyu, Zhang Wei, et al. Electrical pulse generation technology for laser pulse shaping [J]. Infrared and Laser Engineering, 2011, 40(6): 2191-2194. (in Chinese)
[6]
[7]
[8]	Burkhart, S C, Voltage-controlled MESFET pulse shape generator[J]. ICF Quarterly Report, 1994, 4(10): 116054.
[9]	Oraizi H, Afsahi M, Transmission line modeling and numerical simulation for the analysis and optimum design of metamaterial multilayer structures [J]. Progress In Electromagnetics Research B, 2009, 14: 263-283.
[10]
[11]
[12]	Lin Z, Chu Q-X. A novel approach to the design of dualband power divider with variable power dividing ratio based on coupled-lines [J]. Progress In Electromagnetics Research, 2010, 103: 271-284.
[13]
[14]	El Mashade, Abdel Aleem. Analysis of ultrashort pulse propagation in nonlinear optical fiber [J]. Progress In Electromagnetics Research B, 2009, 12: 219-241.
[15]	Reinhold Ludwing, Pavel Bretchko. RF Circuit Design: Theory and Applications [M]. Beijing: Publishing House of Electronics Industry, 2002: 5.
[16]
[17]
[18]	Douglas Brooks. Signal Integrity Issues and Printed Circuit Board Design [M]. Beijing: Publishing House of Electronics Industry, 2011: 3.
[19]
[20]	Li Shimin, Huang Weiling. Principle and Design of Laser Device [M]. Beijing: National Defense Industry Press, 2005. (in Chinese)
[21]
[22]	Kumar M, Basu A, Koul S K. Circuit and active antennas for ultra-wide band pulse generation and transmission [J]. Progress in Electromagnetics Research B, 2010, 23: 251-272.
[23]	Liu Hui. Electrical pulse shaping system design in high power laser experiment [D]. Xi'an: Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, 2011. (in Chinese)

[1]	魏超, 初凤红, 卞正兰, 魏芳. 短相干半导体激光器的射频调制特性及应用 . 红外与激光工程, 2023, 52(4): 20220553-1-20220553-9. doi: 10.3788/IRLA20220553
[2]	李珊珊, 杨介伟, 杨天新, 王肇颖, 张恒康. 表征稳频半导体激光器频率特性的方法 . 红外与激光工程, 2023, 52(10): 20230063-1-20230063-7. doi: 10.3788/IRLA20230063
[3]	潘建宇, 曹银花, 闫岸如, 关娇阳, 孟娇, 郭照师, 李景, 兰天, 王智勇. 半导体激光器非典型宏通道水冷散热系统设计 . 红外与激光工程, 2021, 50(12): 20210037-1-20210037-8. doi: 10.3788/IRLA20210037
[4]	吴涛, 庞涛, 汤玉泉, 孙鹏帅, 张志荣, 徐启铭. 半导体激光器驱动电路设计及环路噪声抑制分析 . 红外与激光工程, 2020, 49(6): 20190386-1-20190386-10. doi: 10.3788/IRLA20190386
[5]	孙玉博, 熊玲玲, 张普, 王明培, 刘兴胜. 半导体激光器光束匀化系统的光学设计 . 红外与激光工程, 2019, 48(12): 1205003-1205003(6). doi: 10.3788/IRLA201948.1205003
[6]	薛梦凡, 彭冬亮, 荣英佼, 申屠晗, 骆吉安, 陈志坤, 刘智惟. 采用实时功率反馈的半导体激光器幅度调制方法 . 红外与激光工程, 2019, 48(9): 905002-0905002(7). doi: 10.3788/IRLA201948.0905002
[7]	王鑫, 朱凌妮, 赵懿昊, 孔金霞, 王翠鸾, 熊聪, 马骁宇, 刘素平. 915 nm半导体激光器新型腔面钝化工艺 . 红外与激光工程, 2019, 48(1): 105002-0105002(5). doi: 10.3788/IRLA201948.0105002
[8]	刘翠翠, 王翠鸾, 王鑫, 倪羽茜, 吴霞, 刘素平, 马骁宇. 半导体激光器双波长光纤耦合模块的ZEMAX设计 . 红外与激光工程, 2018, 47(1): 105002-0105002(6). doi: 10.3788/IRLA201847.0105002
[9]	曹宇轩, 舒世立, 孙方圆, 赵宇飞, 佟存柱, 王立军. 中红外半导体激光器合束技术研究进展(特邀) . 红外与激光工程, 2018, 47(10): 1003002-1003002(8). doi: 10.3788/IRLA201847.1003002
[10]	柯常军, 吴天昊, 孔心怡, 钟艳红, 吴谨. 采用小孔等离子体开关实现TE CO₂激光窄脉冲整形 . 红外与激光工程, 2018, 47(12): 1206007-1206007(4). doi: 10.3788/IRLA201847.1206007
[11]	陈琦鹤, 范杰, 马晓辉, 王海珠, 石琳琳. 用于半导体激光器的高效率复合波导结构 . 红外与激光工程, 2017, 46(11): 1106006-1106006(6). doi: 10.3788/IRLA201746.1106006
[12]	王立军, 彭航宇, 张俊, 秦莉, 佟存柱. 高功率高亮度半导体激光器合束进展 . 红外与激光工程, 2017, 46(4): 401001-0401001(10). doi: 10.3788/IRLA201746.0401001
[13]	吴华玲, 郭林辉, 余俊宏, 高松信, 武德勇. 500W级半导体激光器光纤耦合输出模块设计 . 红外与激光工程, 2017, 46(10): 1005005-1005005(6). doi: 10.3788/IRLA201756.1005005
[14]	夏金宝, 刘兆军, 张飒飒, 邱港. 快速半导体激光器温度控制系统设计 . 红外与激光工程, 2015, 44(7): 1991-1995.
[15]	李峙, 尧舜, 高祥宇, 潘飞, 贾冠男, 王智勇. 半导体激光器堆栈快轴光束质量计算的研究 . 红外与激光工程, 2015, 44(1): 85-90.
[16]	柯熙政, 邓莉君. 半导体激光器的非线性失真特性及预失真补偿研究 . 红外与激光工程, 2015, 44(11): 3204-3210.
[17]	陈河, 陈胜平, 侯静, 姜宗福. 1.06μm注入锁定增益开关半导体激光器特性分析与功率放大研究 . 红外与激光工程, 2015, 44(10): 2900-2905.
[18]	李江澜, 石云波, 赵鹏飞, 高文宏, 陈海洋, 杜彬彬. TEC 的高精度半导体激光器温控设计 . 红外与激光工程, 2014, 43(6): 1745-1749.
[19]	胡黎明, 朱洪波, 王立军. 高亮度半导体激光器泵浦光纤耦合模块 . 红外与激光工程, 2013, 42(2): 361-365.
[20]	韩顺利, 仵欣, 林强. 半导体激光器稳频技术 . 红外与激光工程, 2013, 42(5): 1189-1193.

点击查看大图

计量

文章访问数: 371
HTML全文浏览量: 33
PDF下载量: 167
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

留言板

基于半导体激光器的脉冲整形技术

Laser pulse shaping technology based on semiconductor laser

计量

基于半导体激光器的脉冲整形技术

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;

2. 中国科学院大学,北京100049

English Abstract

Laser pulse shaping technology based on semiconductor laser

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;

2. University of the Chinese Academy of Sciences,Beijing 100049,China

全文HTML

目录

留言板

基于半导体激光器的脉冲整形技术

Laser pulse shaping technology based on semiconductor laser

计量

出版历程

基于半导体激光器的脉冲整形技术

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119; 2. 中国科学院大学,北京100049

English Abstract

Laser pulse shaping technology based on semiconductor laser

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China; 2. University of the Chinese Academy of Sciences,Beijing 100049,China

全文HTML

目录

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;

2. 中国科学院大学,北京100049

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;

2. University of the Chinese Academy of Sciences,Beijing 100049,China