Femtosecond laser induced microstructures in diamond and applications (Invited)
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摘要: 多年来,硅和锗一直被认为是合适制造探测器和集成光电器件的半导体材料。然而,与金刚石基器件相比,这种四价半导体的抗辐射损伤能力较差,而且在恶劣条件或高强光辐照下,器件的稳定性较差。近年来,金刚石因其优异的光学与力学性能,在集成光子学、传感和量子光学等领域展现了巨大的应用前景。利用激光诱导金刚石微纳结构为开发金刚石上的三维光互联器件、全碳探测器、石墨电阻以及单光子源的实现提供了一种有潜力的制备方法。阐述了飞秒激光诱导金刚石色心形成、石墨化和折射率变化的物理机制,在此基础上,进一步探究了飞秒激光诱导金刚石微纳结构在单光子源、传感器和光波导等方面的应用,并对未来发展趋势进行了展望。Abstract: For many years, silicon and germanium have been considered the suited semiconductor materials for detectors and integrated optoelectronic devices fabrication. However, compared with diamond-based devices, such tetravalent semiconductors are less resistant to radiation damage, and the devices are less stable under harsh conditions or under high-energy light radiation. In recent years, due to the excellent optical and mechanical properties, diamond has become a promising material in the application of integrated photonics, sensors, and quantum optics etc. The laser-induced microstructures of diamond represents a powerful tool used for the development optical 3D-contacts devices all-carbon detectors graphite resistors on diamond, as well as the realization of single photon source. The physical mechanisms of femtosecond laser induced color center, graphitization and refractive index change in diamond were demonstrated. Based on this, the applications of the femtosecond laser induced micro-nano structures in diamond for single photon source, sensor and optical waveguide were introduced. Then, the future developing tendency in this field was prospected.
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Key words:
- femtosecond laser /
- color center /
- single-photon source /
- diamond /
- sensor /
- waveguide
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图 4 500 kHz重复频率下抑制辐照区域产生石墨。(a)辐照区域截面光学显微照片,重复频率为500 kHz,平均功率50 mW,扫描速度0.5 mm/s;(b) 辐照区域垂直的四个点上μ-Raman光谱(532 nm波长激发),Out指的是辐照区域外的拉曼光谱。光谱已归一化到金刚石峰,以显示结构内部G峰的相对强度的变化[31]
Figure 4. (a) Transverse optical microscope image of single laser-induced track written with 500 kHz repetition rate. 50 mW average power and 0.5 mm/s scan speed; (b) μ-Raman spectra (532 nm excitation wavelength) at four different vertical positions inside the modifcation. "Out" refers to a spectrum taken outside the track. The spectra have been normalized to the diamond peak to show the change in the relative intensity of the G-peak inside the structure[31]
图 7 金刚石内部距表面80 μm激光直写数字日期的俯视(xy)和侧视(xz)照片。(a)没有像差校正;(b)采用双重自适应光学系统。激光束沿z方向入射,标尺长度5 μm[35]
Figure 7. Top (xy) and side (xz) view of the date fabricated in diamond at a depth of 80 μm. (a) Without aberration correction; (b) Employing the dual adaptive optics system. The laser beam was incident along the z direction, the scale bar represents 5 μm[35]
图 8 重复频率为5 kHz,25 kHz和500 kHz激光光辐照区域拉曼光谱(G峰归一化处理),脉冲能量保持不变(800 nJ),在每个位置产生类似辐照区域的尺寸[31]
Figure 8. μ-Raman spectra (normalized to the G-peak) in the center of modification tracks at repetition rates of 5 kHz, 25 kHz and 500 kHz, with pulse energy held constant (800 nJ) to produce a similar size modification at each repetition rate[31]
图 10 (a)输入端由克尔自锁模Cr:ZnSe激光器输入脉冲频率为150 MHz的脉冲串后的自相关曲线; (b)波导输出端自相关曲线;(c)金刚石样品输出端自相关曲线,红、蓝、绿曲线为对应于密度的自相关曲线
Figure 10. Interferometric autocorrelations of the 150 MHz pulse trains generated by the KLM Cr:ZnSe at the input facet of the diamond crystal (a); At the waveguide output (b); After propagation through bulk diamond crystal (c). The red, blue, and green curves in the autocorrelations correspond to the intensity autocorrelation profile
图 12 (a)单NV色心g(2)(δt)的直方图; (b) 针对不同的激光加工位点,可识别位点是产生了单、双或三重NV色心及其g(2)(0)值分布图[29]
Figure 12. (a) Histogram showing g(2)(δt) from a single NV centre;(b) Histogram of g(2)(0) for the different laser processing sites, allowing the identification of sites of single, double and triple NV centre generation[29]
图 15 探测器的光学照片。金属导线和引脚显示为金色。三块区域:左边是平面阵列;中间是平面化阵列;右边是三维阵列。探测器的连接方案,偏置电压(HV)加载在后端与通道1 (CH1)、连接到电流放大器的通道2 (CH2)。虚线包围的区域对应于测量位置[37]
Figure 15. Optical images of the detector. The metallization and readout strips are shown in gold. The three areas are: left, planar array; middle, 3D phantom array; right, 3D array. The detector connection scheme with bias voltage (HV) contacted to the back side, and channel 1 (CH1) and channel 2 (CH2) connected to the current amplifiers is shown. The areas enclosed in the dashed line correspond to the measurement locations[37]
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