[1] Kim Y H, Lee J Y, Noh Y G, et al. Effect of two-stepgrowth on the heteroepitaxial growth of InSb thin film on Si(001) substrate: A transmission electron microscopy study[J]. Applied Physics Letters, 2006, 89(031919): 1-3.
[2]
[3]
[4] Rotelante R. Why the IR detector market is in flux [J].Laser Focus World, 1999, 35: 65-68.
[5] Chen Boliang, Sun Weiguo, Liang Pingzhi, et al.Development and applications of staring InSb for focal planearray assembly [J]. Infrared and Laser Engineering, 2002,31(5): 419-423. (in Chinese)陈伯良, 孙维国, 梁平治, 等. InSb 凝视红外焦平面组件研制和应用[J]. 红外与激光工程, 2002, 31(5): 419-423.
[6]
[7] Ashley T, Burke T M, Emeny M T, et al. Epitaxial InSb forelevated temperature operation of large IR focal plane arrays[C]//SPIE, 2003, 5074: 95-102.
[8]
[9]
[10] GadelRab S M, Miri A M, Chamberlain S G. A comparisonof the performance and reliability of wet-etched and dry-etched -Si: HTFT' s [J]. IEEE Transactions on ElectronDevices, 1998, 45(2): 560-563.
[11] Porkolab G A, Chen Y J, Merritt S A, et al. Wet-chemistrysurface treatment for dark-current reduction that preserveslateral dimensions of reactive ion etched Ga0.47In0.53As p-i-ndiode photodetectors [J]. IEEE Photonics TechnologyLetters, 1997, 9(4): 490-492.
[12]
[13]
[14] Chang Kow-Ming, Luo Jiunn-Jye, Chiang Cheng-Der, etal. Wet etching characterization of InSb for thermal imagingapplications [J]. Japanese Journal of Applied Physics, 2006,45(3A): 1477-482.
[15]
[16] Ilan Bloom, Yael Nemirovsky. Bulk lifetime determination ofetch-thinned InSb wafers for two-dimensional infrared focalplane array [J]. IEEE Transactions on Electron Devices,1992, 40(2): 809-812.
[17] Wei Shuling, Ying Jiongming. Wet etching of InSb for focalplane arrays [J]. Laser Infrared, 2008, 38 (9): 899-901.(in Chinese)韦书领, 应明炯. InSb 晶片湿法化学刻蚀研究[J]. 激光与红外, 2008, 38(9): 899-901.
[18]
[19] Chen Huijuan, Guo Jie, Ding Jiaxin, et al. Study of mesaetching for a InAs/GaSb superlattice infrared detector [J].Micronanoelectronic Technology, 2008, 45(5): 298-301. (inChinese)陈慧娟, 郭杰, 丁嘉欣, 等. InAs/GaSb 超晶格红外探测器台面湿法腐蚀研究[J]. 微纳电子技术, 2008, 45(5): 298-301.