[1]
[2] Grossman E N, Dietlein C R, Chisum J, et al. Spectral decomposition of ultrawideband terahertz imagery[C]//SPIE, 2007, 6548: 654807.
[3] Liu Jia, Fan Wenhui. Investigation of various fabrics in terahertz time-domain spectroscopy[J]. Infrared and Laser Engineering, 2013, 42(6): 1537-1541. (in Chinese) 刘佳, 范文慧. 常见服装面料的太赫兹光谱研究[J]. 红外与激光工程, 2013, 42(6): 1537-1541.
[4]
[5]
[6] Li Fan, Shi Yanli, Zhao Lusheng, et al. Simulation and calculation of I-V characteristics of GaAs MESFET in THz detection [J]. Infrared and Laser Engineering, 2013, 40(7): 1205-1208. (in Chinese) 李凡, 史衍丽, 赵鲁生, 等. 太赫兹探测用GaAs MESFET I-V 特性模拟计算[J]. 红外与激光工程, 2013, 40(7): 1205-1208.
[7]
[8] Tonouchi M. Cutting-edge terahertz technology[J]. Nature Photonics, 2007, 1(2): 97-105.
[9]
[10] Wei J, Olaya D, Krasik B S, et al. Ultrasensitive hot-electron nanobolometers for terahertz astrophysics[J]. Nature Nanotechnology, 2008, 3(8): 496-500.
[11] Glaab D, Lisauskas A, Bappel S, et al. Terahertz heterodyne detection with silicon field-effect transistors[J]. Applied Physics Letters, 2010, 96(4): 042106
[12]
[13]
[14] Tarasov M, Svensson J,Kuzmin L,et al. Carbon nanotube bolometers[J]. Applied Physics Letters, 2007, 90(16): 163503.
[15] Sizov F F. THz radiation sensors[J]. Opto-Electronics Review, 2010, 18(1): 10-36.
[16]
[17] Takazato A, Kamakura M, Matsui T, et al. Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 m pulse excitation[J]. Appl Phys Lett, 2007, 90: 101119.
[18]
[19] Kasalynas I, Venckevicius R, Valusis G. Continuous wave spectroscopic terahertz imaging with InGaAs bow-tie diodes at room temperature[J]. Sensors Journal IEEE, 2013, 13(1): 50-54.