[1]
[2] Moutaye E R, Beteille H T. Integration of CMOS avalanche photodiodes evaluation and comparison of their global performances [C]// 2010 IEEE Instrumentation and Measurement Technology Conference, 2010: 1373-1376.
[3] Radovanovic'S, Annema A J, Nauta B. A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication [J]. IEEE J Solid-State Circuits, 2005, 40 (8): 1706-1717.
[4]
[5]
[6] Chen W Z, Huang S H, Wu G W, et al. A 3.125 Gbps CMOS fully integrated optical receiver with adaptive analog equalizer [C]// Proceedings of IEEE Asian Solid-State Circuits Conference, 2007: 396-399.
[7] Schow C L, Schares L, Koester S J, et al. A 15-Gb/s 2.4 V optical receiver using a Ge-on-SOI photodiode and a CMOS IC [J]. IEEE Photon Technol Lett, 2006, 18 (19): 1981-1983.
[8]
[9]
[10] Huang W K, Liu Y C, Hsin Y M. Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers[J]. IEEE Electron Lett, 2008, 44(1): 52-53.
[11]
[12] Lee M J, Cho W Y. Performance comparison of two types of silicon avalanche photodetectors based on N-well/P-substrate and P +/N-well junctions fabricated with standard CMOS technology [J]. J Optical Society of Korea, 2011, 15(1): 1-3.
[13] Wang Wei, Feng Qi, Wu Wei, et al. The analysis and simulation of process and performance for silicon avalanche photodiode [J]. Infrared and Laser Engineering, 2014, 43 (1): 140-143. (in Chinese) 王巍,冯其,武逶,等. 硅基APD 器件的工艺及性能仿真 分析[J]. 红外与激光工程,2014,43(1): 140-143.
[14]
[15] Jae M, Young W. Area-dependent photodetection frequency response characterization of silicon avalanche photodetectors fabricated with standard CMOS techmology[J]. IEEE Trans Electron Devices, 2013, 60(3): 998-1004.
[16]
[17]
[18] Shimotori T, Maekita K, Maruyama T, et al. Characterization of APDs fabricated by 0.18 um CMOS process in blue wavelength region [C]//IEEE Opto-Electronics and Communications Conference Technical Digest, 2012: 509-510.
[19] Moloney A M, Morrison A P, Jackson J C, et al. A high speed, high multiplication gain CMOS avalanche [C]// Emerging Technologies in Optical Science(ETOS), 2004: 1-3.