[1] |
|
[2] |
Vukusic J, Bryllert T, Emadi T, et al. A 0.2-W het-erostructure barrier varactor frequency tripler at 113 GHz[J]. IEEE Electron Device Letters, 2007, 28(5): 340-342. |
[3] |
Maestrini A, Tripon-Canseled C, Ward J S, et al. A high efficiency multiple-anode 260-340 GHz frequency tripler[C] //Proc of the 17th ISSTT, 2006, 2: 233-236. |
[4] |
|
[5] |
Alain Maestrini, John S Ward, John J Gill, et al. A 540-640-GHz high-efficiency four-anode frequency tripler [J]. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(9): 2835-2843. |
[6] |
|
[7] |
|
[8] |
Maestrini A, Ward J S, Gill J J, et al. A frequency-multiplied source with more than 1 mW of power across the 840-900 GHz band [J]. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(7): 1925-1932. |
[9] |
Martin S, Nakamura B, Fung A, et al. Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes[C]//Microwave Symp Digest, 2001 IEEE MTT-S, 2001, 3: l641-1644. |
[10] |
|
[11] |
Qiuquan Lu, Yong Zhang, Wei Liu, et al. Design of a 225 GHz frequency tripler using planer Schottky diode [C]//2012 International Conference on Microwave and Millimeter Wave Technology, 2012. |
[12] |
|
[13] |
Yao Changfei, Zhou Ming, Luo Yunsheng, et al. Development of terahertz frequency solid state multiply sources and sensors with Schottky barrier diodes [J]. Acta Electronia Sinica, 2013, 41(3): 438-443. (in Chinese) 姚常飞, 周明, 罗运生, 等. 基于肖特基势垒二极管的太赫 兹固态倍频源和检测器研制[J]. 电子学报, 2013, 41(3): 438-443. |
[14] |
|
[15] |
|
[16] |
Ge Liu, Bo Zhang, Yong Fan, et al. Design of a 183 GHz passive five times multiplier[C]//2012 International workshop on Microwave and Millimeter Wave Circuits and System Technology, 2012. |
[17] |
Jian Guo, Jie Xu, Yin Jiecui, et al. Design of a W-band single-substrate single-waveguide power-combined frequency doubler[C]//2012 International Conference on Microwave and Millimeter Wave Technology, 2012. |