[1]
[2] Hopkinson G R, Mohanmmadzadeh. Radiation effects in charge coupled device imagers and CMOS active pixel sensors[J]. International Journal of High Speed Electronics and Systems, 2004, 14(2): 419-443.
[3]
[4] Wang Huaiyi, Gao Jun. Analysis and development on aerospace infrared optical remote sensor [J]. Infrared and Laser Engineering, 1999, 28(2): 1-5. (in Chinese)
[5]
[6] Bai Yun, Shao Xiumei, Chen Liang, et al. Effect of electron ir radiation on the GaN-based p-i-n UV detector [J]. Infrared and Laser Engineering, 2008, 37(2): 270-273. (in Chinese)
[7] Zhang Jinxing, Guo Hongxia, Wen Lin, et al. Influencing factors of SiGe heterojunction bipolar transistor single event effect in laser microbeam simulation test[J]. High Power Laser and Particle Beams, 2013, 25(9): 2433. (in Chinese)
[8]
[9]
[10] Duan B, Hei D, Song G, et al. Study on transient noise of CCD camera induced by -ray[C]//International Symposium on Photoelectronic Detection and Imaging, 2011: 81943D-81943D-10.
[11] Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides[J]. Nuclear Science, IEEE Transactions on, 2008, 55(4): 1833-1853.
[12]
[13]
[14] Chen Panxun. Radiation Effects on Semiconductor Devices and Integrated Circuits[M]. Beijing: National Defense Industry Press, 2005. (in Chinese)
[15] Hopkinson G R. Comparison of CCD damage due to 10-and 60-MeV protons[J]. IEEE Trans On Nuclear Science, 2003, 50(6): 1960-1967.
[16]
[17] Kuboyama S, Shindou H, Hirao T, et al. Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs[J]. IEEE Trans On Nuclear Science, 2002, 49(6): 2684-2689.
[18]
[19]
[20] Ma T P, Dressendorfer P V. Ionizing Radiation Effects in MOS Devices and Circuits[M]. 1989.
[21] Boch J, Saigne F, Schrimpf R, et al. Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs [J]. IEEE Trans Nucl Sci, 2004, 51(5): 2903-2907.