| [1] | Ashley T, Burke T M, Emeny M T, et al. Epitaxial InSb for elevated temperature operation of large IR focal plane arrays[C]//SPIE, 2003, 5074:95-102. |
| [2] | Haigh M K, Nash G R, Smith S J, et al. Mid-infrared AlxIn1-xSb light-emitting diodes[J]. Appl Phys Lett, 2007, 90:231116. |
| [3] | Yao G S, Zhang L X, Zhang X F, et al. Mesa etching process for InAs/GaSb SLs grown by MBE[J]. Infrared and Laser Engineering, 2015, 44(3):951-954. |
| [4] | Klipstein P, Calahorra Z, Zemel A, et al. 3rd generation infrared detector program at SCD[C]//SPIE, 2006, 5406:222-229. |
| [5] | Evirgen A, Abautret J, Perez J P, et al. Midwave infrared InSb nBn photodetector[J]. Electronics Letters, 2014, 50:1472-1473. |
| [6] | Perez J P, Evirgen A, Abautret J, et al. MWIR InSb detector with nBn architecture for high operating temperature[C]//SPIE, 2015, 9370:93700N. |
| [7] | Dai N, Brown F, Doezema R E, et al. Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb[J]. Applied Physics Letters, 1998, 73:3132-3134. |
| [8] | Isomura S, Prat F G D, Woolley J C. Electroreflectance spectra of AlxIn1-xSb alloys[J]. Physics Status Solidi A, 1974, 65:213-219. |
| [9] | Komkov O S, Semenov A N, Firsov D D, et al. Optical properties of epitaxial AlxIn1-xSb alloy layers[J]. Semiconductors, 2011, 45:1425-1429. |
| [10] | Klin O, Klipstein P C, Jacobsohn E, et al. Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors[J]. Journal of Vacuum Science and Technology, 2006, B24(3):1607-1612. |
| [11] | Varshni Y P. Temperature dependence of the energy gap in semiconductors[J]. Physics, 1967, 34:149-154. |