[1] |
Krabach T N, Staller C, Dejewski S, et al. InGaAs detectors for miniature infrared instruments[C]//SPIE, 1993, 1874: 214-223. |
[2] |
Olsen G H, Joshi A M, Ban V S. Currentstatus of InGaAs detector arrays for 1-3 μm[C]//SPIE, 1991, 1540: 596-605. |
[3] |
Tripathy S, Ramam A, Chua S J, et al. Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry[J]. J Vac Sci Technol A, 2001, 19(5):2522-2532. |
[4] |
Pearton S J, Shul R J, Ren Fan. A review of dry etching of GaN and related materials[J]. MRS Internet J Nitride Semicond Res, 2000, 5: 11-38. |
[5] |
Fan Zhongchao, Yu Jinzhong, Chen Shaowu. Inductively coupled plasma etching technology and its application in optoelectronic devices fabrication[J]. Microfabrication Technology, 2003, 2: 21-28. (in Chinese) |
[6] |
Pletschen W. Plasma etching damage in GaAs studied by resonant Raman scattering[J]. Appl Phys Lett, 1991, 59(18): 2299-2301. |
[7] |
Kirillov D. Raman scattering study of plasma etching damage in GaAs[J]. J Vac Sci Technol B, 1986, 4(6): 1316-1317. |