[1] |
Kim D C, Kown O K, Kim H S, et al. Experimental comparison between front-side and rear-side signal-monitoring in RSOA transistor outline can modules with monitor-photo diode and thermo electric cooler[J]. IEEE Photon Technol Lett, 2010, 22(20):1527-1529. |
[2] |
Wang De, Li Xueqian. Lasted development and applications of semiconductor lasers[J]. Optics and Precision Engineering, 2001, 9(3):279-283. (in Chinese) |
[3] |
Hai Yina, Zou Yonggang, Tian Kun, et al. Research progress of horizontal cavity surface emitting semiconductor lasers[J]. Chinese Optics, 2017, 10(2):194-206. (in Chinese) |
[4] |
Wu Guiying. The development of optical communication[J]. Optics and Precision Engineering, 1978(2):65-67. (in Chinese) |
[5] |
Kobayashi W, Arai M, Yamanaka T, et al. Design and fabrication of 10-/40-Gb/s, uncooled electroabsorption modulator integrated DFB laser with butt-joint structure[J]. J Lightwave Technol, 2010, 28(1):164-171. |
[6] |
Shinoda K, Makino S, Kitatani T, et al. InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices[J]. IEEE Journal of Quantum Electron, 2009, 45(9):1201-1209. |
[7] |
Takahashi H, Shimamura T, Sugiyama T, et al. High-power 25 Gb/s electroabsorption modulator integrated with a laser diode[J]. IEEE Photon Technol Lett, 2009, 21(10):633-635. |
[8] |
Yang J, Bhattacharya P, Wu Z. Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon[J]. IEEE Photon Technol Lett, 2007, 19(10):747. |
[9] |
Hu Yadong, Hu Qiaoyun, Su Bin, et al. Impact of dark current on SWIR polarimetry accuracy[J]. Infrared and Laser Engineering, 2015, 44(8):2375-2381. (in Chinese) |
[10] |
Gong Haime, Liu Dafu. Developments and trend in spaceborne infrared detectors.[J]. Infrared and Laser Engineering, 2008, 37(1):19-24. (in Chinese) |
[11] |
Matsui T, Sugimoto H, Ohtsuka K, et al. GaInAsAP/InP mass transport laser monolithically intefrated with photo-detector using reactive ion etching[J]. Electron Lett, 1989, 25(15):955-956. |
[12] |
Dutta N K, Cella T, Zilko J L, et al. Monolithically integrated laser/photo-diode[J]. Electron Lett, 1988, 24(6):355-356. |
[13] |
Yang Chyida, Lei Pohsun. Lateral power-monitoring photodiode monolithically integrated into 1.3m GaInAsP laser[J]. Solid-State Electronics, 2012, 67(1):63-69. |
[14] |
Xu Lefei, Liu Dafu, Gong Haimei, et al. Low temperature spectroscopy quantification of integrated dual band chip package[J]. Chinese Optics, 2017, 10(6):744-751. (in Chinese) |