[1] |
Qiang L, Yao R H. Analysis of temperature effect on a-Si:H thin film transistors[J]. Solid-State Electronics, 2013, 81(3):13-18. |
[2] |
Lossek K A, Krause C, Arguirov T, et al. Characterization of thin-film a-Si:H/c-Si:H tandem solar cells on glass substrates[J]. Crystal Research and Technology, 2013, 4(5):279-286. |
[3] |
Zhang Jinzhong, Zhang Wenyu, Xie Zhenyu, et al. Growth and optimization of hydrogenated amorphous Si films for thin film transistor fabrication[J]. Chinese Journal of Vacuum Science and Technology, 2012, 32(11):991-995. (in Chinese) |
[4] |
Li Zhi, Li Wei, Cai Haihong, et al. Effects of low argon dilution ratio on the nanocrystallization and properties of a-Si:H thin films[J]. Journal of Nanoscience and Nanotechnology, 2010, 10(11):7667-7670. |
[5] |
Cui Min, Deng Jinxiang, Li Ting, et al. Study on preparation and spectroscopic ellipsometry of a-Si:H thin films[J]. Vacuum, 2014, 51(2):48-51. (in Chinese) |
[6] |
Li Xinli, Gu Jinhua, Gao Haibo. Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth[J]. Acta Physica Sinica, 2012, 61(3):036802. (in Chinese) |
[7] |
Liu Huasong, Yang Xiao, Liu Dandan, et al. Physical model of optical contants of SiO2 thin films[J]. Infrared and Laser Engineering, 2017, 46(9):0921003. (in Chinese) |
[8] |
Mendeleyev V Ya, Skovorodko S N, Lubnin E N, et al. Optical constants of silicon in near infrared region[J]. Applied Physics Letters, 2008, 93(13):2994669. |
[9] |
Wang Lishuan, Yang Xiao, Liu Dandan, et al. Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering[J]. Infrared and Laser Engineering, 2018, 47(3):0321004. (in Chinese) |
[10] |
Netrvalova M, Prusakova L, Mullerova J, et al. Optical properties of amorphous hydrogenated and microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition and re-crystallized at moderate temperatures[J]. Phys Status Solidi C, 2011, 8(9):2680-2683. |
[11] |
Herth E, Desr H, Algr E, et al. Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications[J]. Microelectronics Reliability, 2012, 52(1):141-146. |