[1] |
Liu Fengqi, Zhang Jinchuan, Liu Junqi, et al. Progress in quantum cascade lasers [J]. Chinese Journal of Lasers, 2020, 47(7): 0701007. (in Chinese) doi: 10.3788/CJL202047.0701007 |
[2] |
Faist J, Capasso F, Sivco DL, et al. Quantum cascade laser [J]. Science, 1994, 264(5158): 553-556. doi: 10.1126/science.264.5158.553 |
[3] |
Beck M, Hofstetter D, Aellen T, et al. Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J]. Science, 2002, 295(5553): 301-305. doi: 10.1126/science.1066408 |
[4] |
Bai Y, Bandyopadhyay N, Tsao S, et al. Room temperature quantum cascade lasers with 27% wall plug efficiency [J]. Applied Physics Letters, 2011, 98(18): 125017. |
[5] |
Roberts J S, Green R P, Wilson L R, et al. Quantum cascade lasers grown by metalorganic vapor phase epitaxy [J]. Applied Physics Letters, 2003, 83(24): 1921-1922. |
[6] |
Dan B, Kirch J D, Colin B, et al. High-efficiency, high-power mid-infrared quantum cascade lasers [Invited] [J]. Optical Materials Express, 2018, 8(5): 1378. doi: 10.1364/OME.8.001378 |
[7] |
Fei T, Zhai S Q, Zhang J C, et al. High power λ~8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K [J]. Journal of Semiconductors, 2021, 42(11): 112301. doi: 10.1088/1674-4926/42/11/112301 |
[8] |
Bour D, Troccoli M, Capasso F, et al. Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers [J]. Journal of Crystal Growth, 2004, 272(1/4): 526-530. |
[9] |
Evans A, Darvish S R, Slivken S, et al. Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency [J]. Applied Physics Letters, 2007, 91(7): 553. |
[10] |
Scarpa G, Lugli P, Ulbrich N, et al. Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers [J]. Semiconductor Science and Technology, 2004, 19(4): S342-S344. doi: 10.1088/0268-1242/19/4/113 |
[11] |
Wittmann A, Hugi A, Gini E, et al. Heterogeneous high-performance quantum-cascade laser sources for broad-band tuning [J]. IEEE Journal of Quantum Electronics, 2008, 44(11): 1083-1088. doi: 10.1109/JQE.2008.2001928 |
[12] |
Yu J S, Slivken S, Razeghi M, et al. Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ~7.3 μm above room temperature [J]. Semiconductor Science and Technology, 2010, 25(12): 125015. doi: 10.1088/0268-1242/25/12/125015 |