[1] Chen Boliang, Sun Weiguo, Liang Pingzhi, et al. Development and applications of staring InSb infrared focal plane array assembly[J]. Infrared and Laser Engineering, 2002, 31(5):419-423. (in Chinese)陈伯良, 孙维国, 梁平治, 等. InSb凝视红外焦平面组件研制和应用[J]. 红外与激光工程, 2002, 31(5):419-423.
[2] Rogalski A. Recent progress in infrared detector technologies, Infrared Phys[J]. Technol, 2011, 54:136-154.
[3] Goldberg A C, Fischer T, Kennerly S W, et al. Dual-band QWIP MWIR/LWIR focal plane array test results[C]//Proceedings of SPIE, 2000, 4028(9):615-623.
[4] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6):2545.
[5] Sun Yaoyao, Han Xi, Lv Yuexi, et al. Performance of dual-color Mid-/long-wavelength infrared detectors based on type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2):56-59. (in Chinese)孙姚耀, 韩玺, 吕粤希, 等. 基于InAs/GaSb二类超晶格的中/长波双色红外探测器[J]. 航空兵器, 2018, 4(2):56-59.
[6] Shi Yanli. Type-II InAs/GaInSb superlattices infrared detectors-one of the best choices as the third generation infrared detectors[J]. Infrared Technology, 2011, 33(11):621-624. (in Chinese)史衍丽. 锑基Ⅱ类超晶格红外探测器第三代红外探测器的最佳选择[J]. 红外技术, 2011, 33(11):621-624.
[7] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices:A superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8):2802-2807.
[8] Fuchs F, Weimar U, Pletsche W. InAsGaSb type II infrared detectors grownon GaAs substrates for 8-12m atmospheric window[J]. Appl Phys Lett, 1997, 71:3251-3254.
[9] Rehm R, Walther M, Schmitz J. Two-color infrared photodetector using InAsGaSb superlattices[J]. Electronics Letters, 2006, 42:10-13.
[10] Rehm Robert, Walther Martin, Schmitz Johannes, et al. 2nd and 3rd generation thermal imager based on type-II superlattice photodiodes[C]//Infrared and Photoelectronic Imagers and Detector Devices II, 2006, 6294:6294041-6294047.
[11] Gail J Brown, Shanee Houston, Frank Szmulowicz. Type II InAs/GaSb superlattices for high performance photodiodes and FPAs[J]. Physica E, 2004, 20:471-474.
[12] Sullivan G J, Ikhlassi A, Bergman J. High performance type II InAs-GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays[C]//SPIE, 2005, 5783:131-138.
[13] Andrew Hood, Manijeh Razeghi, Edward H Aifer. MBE growth and characterization of type-II InAs-GaSb superlattices for mid-infrared detection[J]. Appl Phys Lett, 2005, 87:151113.
[14] Cory J Hill, Jian V Li, Jason M Mumolo. Type II InAsGaSb superlattices for high performance photodiode and FPAs[C]//SPIE, 2006, 6206:62060P.
[15] Robert Rehm, Martin Walther, Johannes Schmitz. MBE grown type-II MWIR and LWIR superlattice photodiodes[C]//SPIE, 2005, 5957:595707.
[16] Razeghi M, Hoang A M, Chen G, et al. High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices[C]//SPIE, 2013, 8704:87041W.
[17] Sun Yaoyao, Han Xi, Hao Hongyue, et al. 320256 short-mid-wavelengh dual-color infrared focal plane arrays based on type-II InAs/GaSb superlattice[J]. Infrared Physics Technology, 2017, 82:140-143.
[18] Hong B H, Rybchenko S I, Itskevich I E, et al. Applicability of the kp method to modeling of InAs/GaSb short-period superlattices[J]. Physical Review B, 2009, 79:165323.
[19] Pierre-Yves Delaunay, Andrew Hood, Binh Minh Nguyen, et al. Passivation of type-II InAs/GaSb double heterostructure[J]. Appl Phys Lett, 2007, 91:091112.
[20] Xiang Wei, Wang Guowei, Xu Yingqiang, et al. InAs/GaSb superlattices mid-wavelength infrared focal plane array detectors[J]. Aero Weaponry, 2015(1):49-51. (in Chinese)向伟, 王国伟, 徐应强, 等. 中波InAs/GaSb超晶格红外焦平面探测器[J]. 航空兵器, 2015(1):49-51.
[21] Zhang Lixue, Sun Weiguo, Lv Yanqiu, et al. Anodic fluoride passivation of type II InAs/GaSb superlattice for shortwave infrared detector[J]. Applied Physics A, 2015, 118(2):547-551.