[1] |
Smith D L, Maihiot C. Proposal for strained type II supperlattice infrared detectors[J]. J Appl Phys, 1987, 62: 2545-2548. |
[2] |
|
[3] |
Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in In-GaInSb superlattices[J]. Appl Phys Lett, 1994, 64: 3160-3162. |
[4] |
|
[5] |
Rogalski A. Material considerations for third generation infrared photon detectors[J]. Infrar Phys Technol, 2007, 50: 240-252. |
[6] |
|
[7] |
|
[8] |
Brown G J, Szmulowicz F, Linville R, et al. Type II superlattice photodetector on a compliant GaAs substrate[J]. IEEE Photo Tech Lett, 2000, 12: 684-686. |
[9] |
|
[10] |
Wei Y, Gin A, Razegh M, et al. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 m[J]. Appl Phys Lett, 2002, 81(19): 3675-3677. |
[11] |
|
[12] |
Rhiger D R, Kvaas R E, Harris S F, et al. Progress with type-II superlattice IR detector arrays[C]//SPIE, 2007, 6542: 654202. |
[13] |
|
[14] |
Walther M, Rehm R, Fleissner J, et al. InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays[C]//SPIE, 2007, 6542: 654206-654211. |
[15] |
|
[16] |
Gunapala S D, Ting D Z, Hill C J, et al. Demonstration of 1k1k long-wave and mid-wave superlattice infrared focal plane array[C]//SPIE, 2010, 7808: 78080201-78080206. |
[17] |
Chen Jianxin, Lin Chun, He Li. InAs/GaSb type II superlattice infrared detection technology[J]. Infrared and Laser Engineering, 2011, 40(5): 786-790. (in Chinese) |
[18] |
|
[19] |
陈建新, 林春, 何力. InAs/GaSb II类超晶格红外探测技术[J]. 红外与激光工程, 2011, 40(5): 786-790. |