[1] Marios B, Vassilia Z, Alexios P, et al. Electrowetting properties of micro/nanostructures black silicon[J]. J Am Chem Soc, 2010, 26(15): 13007-13014.
[2]
[3] Peng Yan, Wen Ya, Zhang Dongsheng, et al. Optimal proportional relation between laser power and pulse number for the fabrication of surface-microstructured silicon[J]. Applied Optics, 2011, 50(24): 4765-4768.
[4]
[5] Peng Yan, Zhang Dongsheng, Chen HongYan, et al. Differences in the evolution of surface-microstructured silicon fabricated by femtosecond laser pulses with different wavelength[J]. Applied Optics, 2012, 51(5): 635-639.
[6]
[7]
[8] Samet T, Halbwax M, Torres R, et al. Femtosecond laser for black silicon and photoxoltaic cells[C]//SPIE, 2008, 6881:688119.
[9]
[10] Hu Chuanxin, Hu Jiahui, Huang Jiqiang, et al. Nanosecond laser and mechanism primary analysis of Si-cell optoeletric conversion efficieny[J]. Infrared and Laser Engineering,2012, 41(12): 3226-3229. (in Chinese)
[11] Cheng Zhengxi, Chen Yongping, Ma Bin. Electrical transport properties of black silicon thin film[J]. Infrared and Laser Engineering, 2012, 41(12): 3311-3317. (in Chinese)
[12] 胡传炘, 胡家晖, 黄继强, 等. 纳秒激光与硅电池片光电转换效率变化及机理初步分析[J]. 红外激光与工程, 2012, 41(12): 3226-3229.
[13] Peng Yan, Chen Hongyan, Zhu Chenggang, et al. The effect of laser wavelength on the formation of surface-microstructured silicon[J]. Materials Letters, 2012, 83(127): 127-129.
[14]
[15] Liu Changjiang. The fabrication of black silicon and its application in optoelectronic devices based on femtosecond laser non-equilibrium doping technique[D]. Jilin: Jilin University, 2012:15-16. (in Chinese)
[16]
[17] 程正喜, 陈永平, 马斌. 黑硅薄膜的电学输运特性[J]. 红外激光与工程, 2012, 41(12): 3311-3317.
[18] Peng Yan, Hong Miao, Zhou Yunyan, et al. Influence of femtosecond laser pulse number on spike geometry of microstructured silicon[J]. Appl Phys Express, 2013, 6: 051303.
[19] Wen Ya, Peng Yan, Zhang Dongsheng, et al. Effect of pulse energy of femtosecond laser on the formation of spikes on the silicon surface in the ambient gas of SF6[J]. Chinese J Lasers, 2012, 39(4): 0406001. (in Chinese)
[20]
[21] Jiang Jing, Wu Zhiming, Wang Tao, et al. A new revolutionary material-black silicon[J]. Materials Review, 2010, 24(4): 122-126. (in Chinese)
[22]
[23]
[24] Crouch C H, Carey J E, Warrender J M, et al. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon[J]. Applied Physics Letters, 2004, 84(11): 1850-1852.
[25] 刘长江. 基于飞秒激光非平衡掺杂技术黑硅材料的制备与光电器件研究[D]. 吉林: 吉林大学, 2012: 15-16.
[26] Crouch C H, Carey J E, Shen M, et al. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Applied Physics Letters, 2004, 79: 1635.
[27]
[28]
[29]
[30] 温雅, 彭滟, 张冬生, 等. 飞秒激光脉冲能量对SF6气体环境下硅表面尖峰结构形成的影响[J]. 中国激光, 2012, 39(4): 0406001.
[31]
[32]
[33] 姜晶, 吴志明, 王涛, 等. 革命性的新材料-黑硅[J]. 材料导报, 2010, 24(4): 122-126.
[34]
[35]