[1] Oron M, Tamari N. High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy [J]. Appl Phys Lett, 1983, 42: 139-141
[2]
[3] Ishikawa S, Fitkagai K, Chida H, et al. Highly reliable 980 nm strained InGaAs/AlGaAs high-power buried ridge lasers [J]. OSA, 1994, WD4(1): 43-45.
[4]
[5] Ma Xiaoyu, Wang Jun, Liu Suping. Present situation of investigations and applications in high power semiconductor lasers [J]. Infrared and Laser Engineering, 2008, 37 (2): 189-194. (in Chinese)
[6]
[7] Botez D, Mawst L J, Bhattacharya A, et al. 66% CW wallplug efficiency from Al-free 0.98 mm-emitting diode lasers[J]. Electron Lett, 1996, 32(21): 2012-2013.
[8]
[9] Jiang Jianping. Semiconductor Laser [M]. Beijing: Electronic Industry Press, 2001: 199-200. (in Chinese)
[10]
[11] Kanskar M, Earles T, Goodnough T J, et al. 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars[J]. Electron Lett, 2005, 41: 245-247.
[12]
[13]
[14] KLOPF F. Low threshold high efficiency MBE grown GaInAs=(Al)GaAs quantum dot lasers emitting at 980 nm[J]. J Cryst Growth, 2001, 227-228: 1151-1154.
[15] Krause V, Koesters A, Konig H, et al. Brilliant high-power diode lasers based on broad area lasers [C]//SPIE, 2008, 6876: 697615.