[1] Heidel D F, Marshall P W, Pellish J A, et al. Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM [J]. IEEE Transactions on Nuclear Science, 2009, 56(6): 3499-3504. doi:  10.1109/TNS.2009.2033796
[2] Hales J M, Khachatrian A, Roche N J H, et al. Simulation of laser-based two-photon absorption induced charge carrier generation in silicon [J]. IEEE Transactions on Nuclear Science, 2015, 62(4): 1550-1557. doi:  10.1109/TNS.2015.2422793
[3] Xapsos M A. Applicability of LET to single events in microelectronic structures [J]. IEEE Transactions on Nuclear Science, 1992, 39(6): 1613-1621. doi:  10.1109/23.211343
[4] Moss S C, LaLumondiere S D, Scarpulla J R, et al. Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures [J]. IEEE Transactions on Nuclear Science, 1995, 42(6): 1948-1956. doi:  10.1109/23.489239
[5] Chen D, Kim H, Phan A, et al. Single-event effect performance of a commercial embedded ReRAM [J]. IEEE Transactions on Nuclear Science, 2014, 61(6): 3088-3094. doi:  10.1109/TNS.2014.2361488
[6] Ferlet-Cavrois V, Pouget V, McMorrow D, et al. Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains [J]. IEEE Transactions on Nuclear Science, 2008, 55(6): 2842-2853. doi:  10.1109/TNS.2008.2007724
[7] Melinger J S, Buchner S, McMorrow D, et al. Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies [J]. IEEE Transactions on Nuclear Science, 1994, 41(6): 2574-2584. doi:  10.1109/23.340618
[8] McMorrow D, Lotshaw W T, Melinger J S, et al. Subbandgap laser-induced single event effects: Carrier generation via two-photon absorption [J]. IEEE Transactions on Nuclear Science, 2002, 49(6): 3002-3008. doi:  10.1109/TNS.2002.805337
[9] Johnston A H. Charge generation and collection in pn junctions excited with pulsed infrared lasers [J]. IEEE Transactions on Nuclear Science, 1993, 40(6): 1694-1702. doi:  10.1109/23.273491
[10] Loveless T D, Massengill L W, Bhuva B L, et al. A single-event-hardened phase-locked loop fabricated in 130 nm CMOS [J]. IEEE Transactions on Nuclear Science, 2007, 54(6): 2012-2020. doi:  10.1109/TNS.2007.908166
[11] Ranka J K, Gaeta A L, Baltuska A, et al. Autocorrelation measurement of 6-fs pulses based on the two-photon-induced photocurrent in a GaAsP photodiode [J]. Optics Letters, 1997, 22(17): 1344-1346. doi:  10.1364/OL.22.001344
[12] Kikuchi K. Highly sensitive interferometric autocorrelator using Si avalanche photodiode as two-photon absorber [J]. Electronics Letters, 1998, 34(1): 123-125. doi:  10.1049/el:19980008
[13] McMorrow D, Buchner S, Lotshaw W T, et al. Demonstration of single-event effects induced by through-wafer two-photon absorption [J]. IEEE Transactions on Nuclear Science, 2004, 51(6): 3553-3557. doi:  10.1109/TNS.2004.839106
[14] Schwank J R, Shaneyfelt M R, Dodd P E, et al. Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs [J]. IEEE Transactions on Nuclear Science, 2011, 58(6): 2968-2975. doi:  10.1109/TNS.2011.2171006
[15] Hales J M, Roche N J H, Khachatrian A, et al. Strong correlation between experiment and simulation for two-photon absorption induced carrier generation [J]. IEEE Transactions on Nuclear Science, 2017, 64(5): 1133-1136. doi:  10.1109/TNS.2017.2686010
[16] Hales J M, Roche N J H, Khachatrian A, et al. Two-photon absorption induced single-event effects: Correlation between experiment and simulation [J]. IEEE Transactions on Nuclear Science, 2015, 62(6): 2867-2873. doi:  10.1109/TNS.2015.2489465
[17] Buchner S, McMorrow D, Melinger J, et al. Laboratory tests for single-event effects [J]. IEEE Transactions on Nuclear Science, 1996, 43(2): 678-686. doi:  10.1109/23.490911