| [1] | Rogalski A. HgCdTe infrared detector material: history, status and outlook [J]. Rep Prog Phys, 2005, 68: 2267-2336. doi: 10.1088/0034-4885/68/10/R01 |
| [2] | Liu Shuning, Tang Qianying, Li Qing. Research progress on local field characterization of mercury cadmium telluride infrared photodetectors [J]. Infrared and Laser Engineering, 2022, 51(7): 20220277. (in Chinese) doi: DOI:10.3788/IRLA20220277 |
| [3] | Hu W D, Li Q, Cheng X S, et al. Recent progress on advanced infrared photodetectors [J]. Acta Physica Sinica, 2019, 68(12): 120701. |
| [4] | Sun Quanzhi. Study on preparation technology and properties of Au doped HgCdTe LPE materials with large size and high quality [D]. Shanghai: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2012. (in Chinese) |
| [5] | Li Q, Hu W, Lin C, et al. Dark current characterization of Au and Hg-vacancy hybrid doped p-type epitaxy long-wavelength HgCdTe infrared photodetectors [C]//Proc of SPIE, 2018, 10624: 106240R. |
| [6] | Ziegler J, Bitterlich H, Bruder R, et al. Large-format MWIR and LWIR detectors at AIM [C]//Proc of SPIE, 2013, 8704: 87042L. |
| [7] | Lutz H, Breiter R, Figgemeier H, et al. Improved high operating temperature MCT MWIR modules [C]//Proc of SPIE, 2014, 9070: 90701D. |
| [8] | Breiter R, Figgemeier H, Luta H, et al. Improved MCT LWIR modules for demanding imaging applications [C]//Proc of SPIE, 2015, 9451: 945128. |
| [9] | Shih H D, Kinch M A, Aqariden F, et al. Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors [J]. Applied Physics Letters, 2003, 82(23): 4157-4159. doi: 10.1063/1.1581369 |
| [10] | Hu Shangzheng, Guo Mingzhu, Liu Ming, et al. Research on Au-doped HgCdTe epilayer growth by LPE [J]. Laser & Infrared, 2017, 47(7): 838-841. (in Chinese) |
| [11] | Song Linwei, Kong Jincheng, Li Dongsheng, et al. Au-doped HgCdTe infrared material and device technology [J]. Infrared Technology, 2021, 43(2): 97-103. (in Chinese) |
| [12] | Ciani A J, Ogut S, Batra I P. Concentrations of native and gold defects in HgCdTe from first principles calculations [J]. Journal of Electronic Materials, 2004, 33(6): 737-741. doi: 10.1007/s11664-004-0075-0 |
| [13] | Antoszewski J, Musca C A, Dell J M, et al. Characterization of Hg0.3Cd0.7Te n-on p-type structures obtained by reactive ion etching induced p to n conversion [J]. Journal of Electronic Materials, 2000, 29(6): 837-840. doi: 10.1007/s11664-000-0234-x |
| [14] | Sun Q Z, Yang J R, Wei Y F, et al. Characteristics of Au migration and concentration distributions in Au-doped HgCdTe LPE materials [J]. Journal of Electronic Materials, 2015, 44(8): 2773-2778. doi: 10.1007/s11664-015-3735-3 |
| [15] | Wei Yanfeng, Sun Quanzhi, Zhang Juan, et al. Photoelectric characteristics of HgCdTe with Au-doping [J]. Infrared and Laser Engineering, 2021, 50(4): 20200231. (in Chinese) doi: DOI:10.3788/IRLA20200231 |
| [16] | Reibel Y, Rouvie A, Nedelcu A, et al. Large format, small pixel pitch and hot detectors at sofradir [C]//Proc of SPIE, 2013, 8896: 88960B. |