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红外线指波长在0.78~1000 μm的电磁波,大气中对红外辐射吸收较少的三个波段称为“大气窗口”,军事应用上称为短波红外、中波红外和长波红外[1]。短波红外(SWIR)波长在1~3 μm,主要利用日光、月光、星光等反射成像,与可见光成像原理类似,在分辨率和细节上与黑白可见光图像相当,这使得目标易于识别,并在微光夜视、精确制导、空间遥感、近红外光谱分析、工业控制、生物医疗和航天航空等领域[2-5]获得广泛的应用。表1所示为短波红外的成像特点及应用领域[6]。
表 1 SWIR的成像特点及应用领域
Table 1. Imaging characteristics and application fields of SWIR
Imaging characteristics Application fields Based on room temperature target reflection imaging, clear details Night vision imaging application Fingerprint characteristics for substance identification Spectral imaging Eye safety laser 155X nm detection and positioning Optical fiber detection, satellite internet Thermal radiation imaging of high temperature targets Missile plume detection Strong ability to wear fog, haze, sand, smoke and glass Imaging detection under harsh conditions Camouflage recognition, wig, fake beard recognition Anti-terrorism application The water has strong absorption of short waves, and the water target has a large contrast Maritime border security, early warning Operation at or near room temperature, small size, light weight, low energy consumption Apply to the cell-phone's imaging 目前用于制造短波红外探测器的材料主要有HgCdTe、InGaAs、PbS、PtSi等,随着InGaAs材料生长和芯片制作工艺的不断成熟,相较于其他材料,采用InGaAs材料制备的探测器芯片具有灵敏度高、可室温操作、体积小等优点,在短波红外探测器的选择中脱颖而出。经过近40多年的发展,百万像素高性能、高密度InGaAs大面阵焦平面阵列技术在欧美先进国家以及日本已实现产业化,最小像元中心距达到5 μm;国内目前的InGaAs产品规格主要是15 μm中心距640×512,10 μm、15 μm中心距1 280×1024正在陆续推出。为了进一步减小像元中心距,提高分辨率和阵列规格,美国、中国和加拿大的相关研究机构正在研究中心距5 μm以下、百万像素或以上的胶体量子点(Colloidal Quantum Dot, CQD)短波红外探测器技术;为了充分利用现有的大面积硅(Si)基集成电路技术,提高集成度,发展了直接集成在12 in(1 in=2.54 cm)Si读出电路上的GeSi SWIR探测器技术;为了进一步扩展波长,利用二类超晶格材料响应波长的可调谐性,推出了截止波长2.0 μm以上的二类超晶格(T2SLs)短波红外探测器。文中对以上短波红外探测器的发展技术进行了归纳总结,探讨分析了今后短波红外探测器的发展方向。
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美国Sensors Unlimited Incorporation(SUI)在全球SWIR市场具有领先地位,陆续推出了功能强大的面阵、线阵扫描SWIR产品。该公司的技术路线为InGaAs线阵一般采用正照明,读出电路(ROIC)与每个像素间采用引线键合方式实现电学连接;二维面阵采用背照明,InGaAs 阵列与ROIC之间则采用In柱倒装焊方式连接[7]。技术优势为高量子效率和高灵敏度,响应波长包括标准的0.9~1.7 μm,并向可见光方向拓展至0.5 μm,其中在0.95 μm处的量子效率可达90%,图1为SUI产品量子效率图[8]。美国FLIR公司报道了A6260系列短波红外热像仪[9],配备640×512规格的InGaAs探测器,最大帧频为180 Hz,适合抓拍高速场景,可测量400 ℃以上的温度,适合于烤箱、熔炉等需要高温测量的应用;后续推出的Tau SWIR热像仪[10],利用相关双采样技术(CDS)有效降低噪声,结构紧凑,易于集成。Teledyne Princeton Instruments公司的NIRvana:LN相机,拥有同类相机中最低的暗电流噪声,为10 e−/pixel/s @−190 ℃,积分时间可达一个小时,非常适合天文观测[11];同时,NIRvana系列还可以用于量子点荧光实验、纳米管成像。麻省理工学院的Bawendi实验室[12],在2017年利用NIRvana 640,实现了清晰的小鼠体内成像;2021年,Jana Zaumseil教授的团队[13],使用NIRvana 640成功对单壁碳纳米管进行成像。表2给出了SUI公司面阵和线阵器件的典型性能指标,同时汇总了美国部分SWIR公司的最新发展情况。
表 2 美国部分SWIR公司的最新发展情况
Table 2. The latest development of SWIR companies in the US
Corporate name Format Spectral range/μm Pitch/μm Performance
SUI640×512
1280×10240.7-1.7
0.5-1.712.5
12.5The plane array frame frequency is 60 Hz
Quantum efficiency (QE) ≥65%
Pixel operability≥99%
The detectivity in 60 Hz mode is 2.8×1013 cm·Hz1/2·W−1
ROIC noise is 25 e−
Dynamic range is 1850:11024×1
2048×10.8-1.7
0.99-1.6125
10Linear array (2048×1) maximum frame frequency is 12 kHz
QE>70%
Pixel operability is 99%
Dynamic range (Low gain mode) >2100:1
Teledyne Princeton Instruments640×512 0.9-1.7 20 NIRvana HS:
QE>80% (1-1.6 μm )
Frame frequency is 250 Hz
Dark current is 500 e−·pixel−1·s−1 @ −55 °C
ROIC noise<60 e−1024×1 0.8-1.7
0-2.225 Linear array QE>85%
ROIC noise is 400 e−
Minimum dark current is 5.7 ke−·pixel−1·s−1
Princeton
Infrared
Technologies1280×1024 0.4-1.7 12 QE>75% (1-1.6 μm)
ROIC noise<45 e−
Maximum frame frequency is 100 Hz
Dynamic range≥3000:11024×1 0.4-1.7 12.5 Linear array ROIC noise<75 e−
Dynamic range>6000:1
FILR640×512 0.9-1.7
0.6-1.715 QE>60%
Maximum frame frequency is 180 Hz
Pixel operability is 99.8%1920×1080 0.9-1.7 10 ROIC noise<30 e−(High gain mode)
Frame frequency is 16 outputs≥120 HzTeledyne Technologies 512×1
1024×10.95-1.7 25
12.5Frame frequency is 49 kHz
QE (typical) is 66%
Dark current<5 pA -
作为红外探测器全球领先的制造商—Sofradir,自2006年开始研究高品质的InGaAs材料,于2007年推出CACTUS 320 InGaAs阵列,像素规格为320×256,像元中心距为30 μm,采用电容反馈跨阻放大器(CTIA)结构的商业ROIC,以及半导体制冷器 (Thermo Electric Cooler,TEC)进行温度冷却。于2012年开始生产CACTUS 640组件,该组件具有25 μm中心距的640×512 InGaAs阵列[14]。CACTUS 320和CACTUS 640组件专为0.9~1.7 μm(可拓展到可见光波段)的夜天光低通量辐射探测设计。
由于CACTUS系列组件的成功应用,Sofradir获得了法国国防部的支持,开发像元中心距15 μm的640×512 InGaAs组件,并于2013年底开始生产SNAKE-SW系列[15]产品,响应波段覆盖0.9~1.7 μm波段,阵列规格为640×512,像元尺寸为15 μm,最大帧频为300 Hz,量子效率为70%,ROIC噪声为30 e−,在0.2 V偏压下暗电流为30 fA,阵列可操作性为99.9%,未校正的不均匀性为4%,使用TEC制冷器。2014年10月,Sofradir公司推出了像元中心距15 μm的1024×1024可见光-短波红外NGP探测器[16-17],响应波长为0.35~2.5 μm,材料为HgCdTe,采用抗反射涂层后,峰值量子效率高达98%,NGP探测器被选择用于Sentinel-5任务,计划于2021年搭载MetOp-SG卫星升空,用于从极地轨道上对地球大气层进行监测。Sofradir于2017年6月15日宣布,正在开发第一款2048×2048、15 μm中心距的短波红外探测器[18],并在量子效率、暗电流、积分时间和噪声方面进一步提高和优化,更好地应用于天文观测。
法国New Imaging Technologies (NIT) 对SWIR技术进行了大量的研发投资,采用对数读出的方式,推出了动态范围高达120 dB的InGaAs探测器,覆盖0.9~1.7 μm波段,表3为NIT SWIR产品的主要性能指标[19]。
表 3 NIT SWIR产品的研发情况
Table 3. The development of NIT SWIR products
Product name Format Pitch/μm Performance WiDy SWIR 320 320×256 25 Frame frequency is 200 Hz
QE is 70%
Dynamic range is 120 dBWiDy SenS 640 640×512 15 Frame frequency is 230 Hz
QE>70%
Maximum dynamic range is 120 dB
SenS 1280
1280×1024
10Frame frequency is 60 Hz
QE>85%
Maximum dynamic range is 61 dB
Dark current is 50 ke−·pixel−1·s−1
ROIC noise<30 e−HiPe SenS 640 640×512 15 Frame frequency is 230 Hz
QE is 90%
Dark current<1.5 ke−·pixel−1·s−1 @20 °C
ROIC noise<30 e−LiSa SWIR 2048 2048×1 7.5 Frame frequency is 60 kHz
QE>85%
Minimum ROIC noise is 250 e− -
以色列Semi Conductor Devices (SCD)公司是一家处于国际领先地位的红外探测器供应商。SCD凭借40多年的研发和生产经验,掌握了半导体芯片制造工艺技术,液相外延(Liquid Phase Epitaxy,LPE)和分子束外延(Molecular Beam Epitaxy,MBE)薄膜生长技术,超大规模集成电路设计技术,杜瓦瓶真空设计及装配技术,辐照建模及测试技术[20],可提供基于InSb、MCT(Mercury Cadmium Telluride)、InGaAs、T2SLs等材料的探测器,其产品覆盖整个红外波段。SCD在SWIR领域内也取得了瞩目的成绩,Cardinal产品系列响应波长为0.6~1.7 μm,InGaAs焦平面阵列含像元中心距15 μm (640×512)、像元中心距10 μm (1280×1024)两种规格,帧频高达350 Hz(640×512规格)和150 Hz (1280×1024),采用高信噪比的全数字化ROIC(基于0.18 μm CMOS工艺),表4为Cardinal系列的性能情况[21-22]。
表 4 Cardinal系列的性能情况
Table 4. The performance of Cardinal series
Product name Cardinal 640 Cardinal 1280 Format 640×512 1280×1024 Pitch/μm 15 10 QE >80% >80% Dark current/density @280 K <1.5 nA/cm2 <1 fA Frame frequency/Hz 350 150 Pixel operability ≥99.5% >99.5% -
2000年Xenics在比利时成立,是欧洲SWIR市场的领军者。该公司利用InGaAs探测技术制造出XS-1.7-640/XS-1.7-320系列红外探测器,其响应波段为0.9~1.7 μm,探测器阵列为640×512,像元中心距为20 μm/30 μm,有效像元>99%,帧频为20~90 Hz。2013年欧洲空间局发射的Proda-V卫星上使用的是由Xenics公司提供的Xlin-1.7-3000型InGaAs行扫描型探测器,由三个独立的具有1024个像元的InGaAs子阵列构成,像元中心距为25 μm,光谱响应范围0.9~1.7 μm,可以提供宽度为2200 km、中心分辨率为100 m的地球环境信息,便于人们掌握关于地球上农作物与植被的变化情况,以及其他保护生物圈的重要参数信息[23]。
Xenics公司持续进行SWIR技术创新。2016年以来推出了一系列高性价比、高灵敏度、低暗电流、可用于长积分时间的SWIR产品,适合于控制成本的批量市场应用,如激光光斑分析、色选、回收市场及半导体检测市场,对短波红外夜视安防等应用也是较好的选择。其中,Bobcat带门控系列相机针对积分时间短的短波红外研发、激光门控成像、热物体或快速移动物体的成像(如灯泡或涡轮叶片检查)、测量系统需要同步脉冲激光的场景应用等;Manx R系列帧频高达256 kHz,超过全球任何其他SWIR线扫描家族的相机。Xenics公司也报道了基于T2SLs的拓展短波红外(Extended SWIR)产品,阵列规模为32×256,响应波长为1~2.35 μm,像元尺寸为30 μm,帧频为344 Hz,动态范围为70 dB,读出噪声为150 e−,可操作性>99%。表5为Xenics推出的InGaAs短波红外产品的性能参数[24]。
表 5 Xenics SWIR产品
Table 5. Xenics SWIR products
Product name Format Spectral range/μm Pitch/μm Performance Bobcat-320-Gated 320×256 0.9-1.7 20 Frame frequency is 400 Hz,QE is 80%
Dynamic range is 61 dB,ROIC noise is 60 e−
Dark current is 190 ke−·pixel−1·s−1@200 mV, 288 KBobcat-640 640×512 0.5-1.7 20 Frame frequency is 100 Hz,QE is 80%
Dynamic range is 60 dB,ROIC noise is 120 e−
Dark current<100 ke−·pixel−1·s−1@150 mV, 288 KXeva-320 320×256 0.5-1.7 30 Frame frequency is 344 Hz,QE is 80%
Dynamic range is 70 dB,ROIC noise is 150 e−
Dark current<10 ke−·pixel−1·s−1@223 KCheetah-640 640×512 0.5-1.7 20 Frame frequency is 1730 Hz,QE is 80%
Dynamic range is 60 dB,ROIC noise is 120 e−
Dark current<100 ke−·pixel−1·s−1@150 mV, 288 KManx R 2048×1 0.9-1.7 12.5 Frame frequency is 256 kHz,QE is 80%
Dynamic range is 69 dB,ROIC noise is 350 e−
Dark current<1.6 Me−·pixel−1·s−1@100 mV, 293 K -
传统的SWIR探测器使用铟柱倒装互联技术连接InGaAs光电二极管和Si读出电路,如图2(a)所示,探测器像素之间必需保证一定的间距,以避免铟柱之间的连接和短路,存在缩小像素间距的制造难度。日本索尼公司研发的SWIR技术,InGaAs层和Si层通过铜-铜互联[25],如图2(b)所示,这种方式让探测器尺寸更紧凑、也更牢固,像素之间的中心距达到5 μm;目前推出的两个产品型号有效像素为656×520、1296×1032,最大帧频分别为250 Hz和130 Hz,在0.4~1.7 μm波段的量子效率>60%,峰值量子效率接近99%,如图3所示。索尼公司的SWIR产品分辨率高、响应速度快,但器件灵敏度和噪声未见报道。
图 2 传统的铟柱倒装互联技术(a)与索尼的铜铜互联技术(b)
Figure 2. Traditional flip chip bonding technology via indium (a) and SONY's copper-copper connection technology (b)
日本滨松集团[26]也在生产SWIR产品,其线阵为1024×1、512×1等规格,覆盖0.95~1.7 μm波段,像元中心距为12.5 μm,帧频可达40 kHz。面阵规格为640×512,覆盖0.9~1.5 μm波段,像元中心距为20 μm,帧频为7.2 f/s,量子效率为60%,−70 ℃下暗电流为130 e−·pixel−1·s−1,读出噪声为500 e−。
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在国内,许多科研单位和企业一直着眼于短波红外探测器的研究,并获得了长足的发展和应用。目前,国内640×512规格InGaAs短波红外探测器制造技术已趋于成熟稳定,其产品性能指标逼近国际领先水平,同时全国产化的1280×1024、2560×2048规格探测器也在陆续推出。以中国科学院上海技术物理研究所为代表的短波红外探测器研制单位围绕航天遥感工程、激光光斑监测、工业应用等需求,以扩大面阵规模、提高像元密度、优化探测器性能为方向,实现了从单元、线列到多种规格大面阵的跨代发展,器件响应光谱从常规波段分别向可见光波段0.5 μm、长波2.5 μm拓展,像元间距从30 μm发展到10 μm,器件暗电流水平不断降低,探测器性能指标不断提高[27]。在新型多功能 InGaAs 探测器方面,发展了一种宽谱段响应的InGaAs探测器,通过片上集成微纳陷光结构,实现了可见波段拓展和较高的量子效率;发展了片上集成亚波长金属光栅的InGaAs偏振探测器,消光比大于20∶1[28]。表6为目前已见报道的国内部分科研单位、企业进行InGaAs短波红外探测器研发生产的情况。
表 6 国内部分科研单位短波红外探测器的研发情况
Table 6. The research and development of short wavelength infrared detectors in some domestic research institutes
Research unit Format Spectral range/μm Performance Shanghai Institute of Technical Physics,
Chinese Academy of Sciences1280×1024 0.9-1.7 Blind pixel rate<1%
Response non-uniformity is 6.4%
Dark current density>5 nA/cm2@300 K
Peak detectivity>5×1012 cm·Hz1/2·W−1@300 K1024×32 0.9-2.2 Blind pixel rate is 0.44%,
Response non-uniformity is 5.7%, QE is 81.7% (1.6 μm)
Peak detectivity is 2.5×1012 cm·Hz1/2·W−1@200 K1024×512 0.95-2.5 Peak detectivity is 8×1011 cm·Hz1/2·W−1@200 K
Response non-uniformity is 6%
Frame frequency>250 Hz2560×2048 0.9-1.7 Blind pixel rate is 0.26%
Response non-uniformity is 3.81%
Peak detectivity is 1.11×1013 cm·Hz1/2·W−1Guohui Optoelectronics 640×512 0.9-1.7 Pixel pitch is 15 μm, QE≥65%
Detectivity≥5×1012 cm·Hz1/2·W−1
ROIC noise is 50 e−(High gain mode)
Dynamic range is 120 dB (Logarithmic mode)
Response non-uniformity<3%
Pixel operability>99.5%
Minimum frame frequency is 340 Hz1280×1024 0.9-1.7 Pixel pitch is 15 μm
Dark current density is 2.25 nA/cm2@25 ℃
Detectivity is 1.1×1013cm·Hz1/2·W−1
ROIC noise is 48 e−
QE is 88%@1.55 μm
Pixel operability>99%[29]The 44 th Research Institute of China Electronics Technology Group Corporation 320×240 1.0-1.7 Peak detectivity is 6.7×1012 cm·Hz1/2·W−1
QE>65%256×1 0.9-1.7 Peak detectivity is 1.2×1012 cm·Hz1/2·W−1
Response non-uniformity is 3.87%0.9-2.4 Peak detectivity is 3.25×1010 cm·Hz1/2·W−1
Response non-uniformity is 11%
Development and application of short wavelength infrared detectors (Invited)
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摘要: 短波红外波段作为“大气透过窗口”之一,探测器工作在该波段能获得目标更多的辐射能量。另外,短波红外对近室温目标的探测成像类似于可见光的反射式成像,一方面拥有中长波红外探测缺少的细节分辨能力,另一方面具有穿透烟雾进行成像等可见光探测不具备的能力。随着短波红外探测器在军事、民用领域的广泛应用,对短波红外探测器的性能、成本提出了更高的要求,InGaAs探测器由于高达约70%~90%的量子效率、室温下约8000 cm2/(V·s)的高迁移率,以及高灵敏度、高速响应、低成本的应用优势,是目前短波红外探测器的最佳选择。为了进一步扩展波长、提高分辨率、降低成本,发展了基于II类超晶格、胶体量子点、硅基材料等新材料和新工艺的短波红外探测器。文中对美国、法国、以色列、中国等国内外短波红外探测器的发展现状进行了归纳整理,对有关短波红外探测器的新材料和新工艺进行了报道,最后探讨分析了短波红外探测器的未来发展趋势。Abstract: Short wavelength infrared band (SWIR) as one of the "atmospheric windows", the detectors working in this wavelength range can receive more radiation energy from the target and gain higher sensitivity. In addition, SWIR detecting and imaging is based on the reflection imaging from the target similar to visible light, consequently it is typical of the distinct details resolution ability that medium and long wavelength infrared imaging lacks. With the wide application of SWIR detectors in military and civil area, higher requirements are put forward on the both performance and cost of SWIR detectors. InGaAs detectors is one of best choice as SWIR detectors since it has high sensitivity, high-speed response and low cost due to its quantum efficiency up to 70%-90% and high mobility close to 8000 cm2/(V·s) at room temperature. However, in order to further expand the wavelength, improve the imaging resolution, and reduce the cost, SWIR detectors based on new materials and new mechnism such as type-II superlattices, colloidal quantum dots and Si-based materials have been developed. This paper firstly summarized the advancement of InGaAs SWIR detectors from the main foreign and domestic research institutions including Sensors Unlimited Incorporation (SUI), FLIR, Teledyne Technologies, Teledyne Princeton Instruments of the United States, Sofradir and New Imaging Technologies (NIT) of France, Semiconductor Device (SCD) of Israel, Xenics of Belgium, etc. Then the new materials and new technology of SWIR detectors were introduced. Finally, the further development trendency of SWIR detectors was proposed.
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Key words:
- SWIR /
- infrared detector /
- InGaAs /
- colloidal quantum dots /
- type-II superlattices /
- Si-based SWIR
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表 1 SWIR的成像特点及应用领域
Table 1. Imaging characteristics and application fields of SWIR
Imaging characteristics Application fields Based on room temperature target reflection imaging, clear details Night vision imaging application Fingerprint characteristics for substance identification Spectral imaging Eye safety laser 155X nm detection and positioning Optical fiber detection, satellite internet Thermal radiation imaging of high temperature targets Missile plume detection Strong ability to wear fog, haze, sand, smoke and glass Imaging detection under harsh conditions Camouflage recognition, wig, fake beard recognition Anti-terrorism application The water has strong absorption of short waves, and the water target has a large contrast Maritime border security, early warning Operation at or near room temperature, small size, light weight, low energy consumption Apply to the cell-phone's imaging 表 2 美国部分SWIR公司的最新发展情况
Table 2. The latest development of SWIR companies in the US
Corporate name Format Spectral range/μm Pitch/μm Performance
SUI640×512
1280×10240.7-1.7
0.5-1.712.5
12.5The plane array frame frequency is 60 Hz
Quantum efficiency (QE) ≥65%
Pixel operability≥99%
The detectivity in 60 Hz mode is 2.8×1013 cm·Hz1/2·W−1
ROIC noise is 25 e−
Dynamic range is 1850:11024×1
2048×10.8-1.7
0.99-1.6125
10Linear array (2048×1) maximum frame frequency is 12 kHz
QE>70%
Pixel operability is 99%
Dynamic range (Low gain mode) >2100:1
Teledyne Princeton Instruments640×512 0.9-1.7 20 NIRvana HS:
QE>80% (1-1.6 μm )
Frame frequency is 250 Hz
Dark current is 500 e−·pixel−1·s−1 @ −55 °C
ROIC noise<60 e−1024×1 0.8-1.7
0-2.225 Linear array QE>85%
ROIC noise is 400 e−
Minimum dark current is 5.7 ke−·pixel−1·s−1
Princeton
Infrared
Technologies1280×1024 0.4-1.7 12 QE>75% (1-1.6 μm)
ROIC noise<45 e−
Maximum frame frequency is 100 Hz
Dynamic range≥3000:11024×1 0.4-1.7 12.5 Linear array ROIC noise<75 e−
Dynamic range>6000:1
FILR640×512 0.9-1.7
0.6-1.715 QE>60%
Maximum frame frequency is 180 Hz
Pixel operability is 99.8%1920×1080 0.9-1.7 10 ROIC noise<30 e−(High gain mode)
Frame frequency is 16 outputs≥120 HzTeledyne Technologies 512×1
1024×10.95-1.7 25
12.5Frame frequency is 49 kHz
QE (typical) is 66%
Dark current<5 pA表 3 NIT SWIR产品的研发情况
Table 3. The development of NIT SWIR products
Product name Format Pitch/μm Performance WiDy SWIR 320 320×256 25 Frame frequency is 200 Hz
QE is 70%
Dynamic range is 120 dBWiDy SenS 640 640×512 15 Frame frequency is 230 Hz
QE>70%
Maximum dynamic range is 120 dB
SenS 1280
1280×1024
10Frame frequency is 60 Hz
QE>85%
Maximum dynamic range is 61 dB
Dark current is 50 ke−·pixel−1·s−1
ROIC noise<30 e−HiPe SenS 640 640×512 15 Frame frequency is 230 Hz
QE is 90%
Dark current<1.5 ke−·pixel−1·s−1 @20 °C
ROIC noise<30 e−LiSa SWIR 2048 2048×1 7.5 Frame frequency is 60 kHz
QE>85%
Minimum ROIC noise is 250 e−表 4 Cardinal系列的性能情况
Table 4. The performance of Cardinal series
Product name Cardinal 640 Cardinal 1280 Format 640×512 1280×1024 Pitch/μm 15 10 QE >80% >80% Dark current/density @280 K <1.5 nA/cm2 <1 fA Frame frequency/Hz 350 150 Pixel operability ≥99.5% >99.5% 表 5 Xenics SWIR产品
Table 5. Xenics SWIR products
Product name Format Spectral range/μm Pitch/μm Performance Bobcat-320-Gated 320×256 0.9-1.7 20 Frame frequency is 400 Hz,QE is 80%
Dynamic range is 61 dB,ROIC noise is 60 e−
Dark current is 190 ke−·pixel−1·s−1@200 mV, 288 KBobcat-640 640×512 0.5-1.7 20 Frame frequency is 100 Hz,QE is 80%
Dynamic range is 60 dB,ROIC noise is 120 e−
Dark current<100 ke−·pixel−1·s−1@150 mV, 288 KXeva-320 320×256 0.5-1.7 30 Frame frequency is 344 Hz,QE is 80%
Dynamic range is 70 dB,ROIC noise is 150 e−
Dark current<10 ke−·pixel−1·s−1@223 KCheetah-640 640×512 0.5-1.7 20 Frame frequency is 1730 Hz,QE is 80%
Dynamic range is 60 dB,ROIC noise is 120 e−
Dark current<100 ke−·pixel−1·s−1@150 mV, 288 KManx R 2048×1 0.9-1.7 12.5 Frame frequency is 256 kHz,QE is 80%
Dynamic range is 69 dB,ROIC noise is 350 e−
Dark current<1.6 Me−·pixel−1·s−1@100 mV, 293 K表 6 国内部分科研单位短波红外探测器的研发情况
Table 6. The research and development of short wavelength infrared detectors in some domestic research institutes
Research unit Format Spectral range/μm Performance Shanghai Institute of Technical Physics,
Chinese Academy of Sciences1280×1024 0.9-1.7 Blind pixel rate<1%
Response non-uniformity is 6.4%
Dark current density>5 nA/cm2@300 K
Peak detectivity>5×1012 cm·Hz1/2·W−1@300 K1024×32 0.9-2.2 Blind pixel rate is 0.44%,
Response non-uniformity is 5.7%, QE is 81.7% (1.6 μm)
Peak detectivity is 2.5×1012 cm·Hz1/2·W−1@200 K1024×512 0.95-2.5 Peak detectivity is 8×1011 cm·Hz1/2·W−1@200 K
Response non-uniformity is 6%
Frame frequency>250 Hz2560×2048 0.9-1.7 Blind pixel rate is 0.26%
Response non-uniformity is 3.81%
Peak detectivity is 1.11×1013 cm·Hz1/2·W−1Guohui Optoelectronics 640×512 0.9-1.7 Pixel pitch is 15 μm, QE≥65%
Detectivity≥5×1012 cm·Hz1/2·W−1
ROIC noise is 50 e−(High gain mode)
Dynamic range is 120 dB (Logarithmic mode)
Response non-uniformity<3%
Pixel operability>99.5%
Minimum frame frequency is 340 Hz1280×1024 0.9-1.7 Pixel pitch is 15 μm
Dark current density is 2.25 nA/cm2@25 ℃
Detectivity is 1.1×1013cm·Hz1/2·W−1
ROIC noise is 48 e−
QE is 88%@1.55 μm
Pixel operability>99%[29]The 44 th Research Institute of China Electronics Technology Group Corporation 320×240 1.0-1.7 Peak detectivity is 6.7×1012 cm·Hz1/2·W−1
QE>65%256×1 0.9-1.7 Peak detectivity is 1.2×1012 cm·Hz1/2·W−1
Response non-uniformity is 3.87%0.9-2.4 Peak detectivity is 3.25×1010 cm·Hz1/2·W−1
Response non-uniformity is 11% -
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