台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

魏鹏; 朱耀明; 邓洪海; 唐恒敬; 李雪; 张永刚; 龚海梅

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台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

魏鹏, 朱耀明, 邓洪海, 唐恒敬, 李雪, 张永刚, 龚海梅

文章导航 > 红外与激光工程 > 2011 > 40(12): 2309-2313

魏鹏, 朱耀明, 邓洪海, 唐恒敬, 李雪, 张永刚, 龚海梅. 台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触[J]. 红外与激光工程, 2011, 40(12): 2309-2313.

引用本文:

魏鹏, 朱耀明, 邓洪海, 唐恒敬, 李雪, 张永刚, 龚海梅. 台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触[J]. 红外与激光工程, 2011, 40(12): 2309-2313.

Wei Peng, Zhu Yaoming, Deng Honghai, Tang Hengjing, Li Xue, Zhang Yonggang, Gong Haimei. Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors[J]. Infrared and Laser Engineering, 2011, 40(12): 2309-2313.

Citation:

Wei Peng, Zhu Yaoming, Deng Honghai, Tang Hengjing, Li Xue, Zhang Yonggang, Gong Haimei. Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors[J]. Infrared and Laser Engineering, 2011, 40(12): 2309-2313.

台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

魏鹏^1,2,3,
朱耀明^1,2,3,
邓洪海^1,2,3,
唐恒敬^1,2,
李雪^1,2,
张永刚⁴,
龚海梅^1,2

1.
中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;
2.
中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083;
3.
中国科学院研究生院,北京100049;
4.
中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors

Wei Peng^1,2,3,
Zhu Yaoming^1,2,3,
Deng Honghai^1,2,3,
Tang Hengjing^1,2,
Li Xue^1,2,
Zhang Yonggang⁴,
Gong Haimei^1,2

1.
State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
2.
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
3.
Graduate University of the Chinese Academy of Sciences,Beijing 100049,China;
4.
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China

Abstract: The electrical and metallurgical behavior of Ti/Pt/Au contacts on p-InP was investigated. The contacts were transformed to an ohmic contacts at the temperature about 450 ℃. Low resistance ohmic contacts (c=7.310-5cm2) were achieved after annealing at 450 ℃ for 4 minutes. To approach device process, Cr/Au (20 nm/400 nm) was deposited on the contact pads after the annealing process. The result indicates that the contacts of low resistance, smooth surface and high reliability are fabricated in a moderate condition. The auger electron spectroscopy(AES) depthcomposition profiles indicates that the Pt layer can relatively prevent Au from penetrating into the InP and only a small quantity of Au punched through the Pt layer and penetrated into the InP. The findings of the present study suggests that the formation of ohmic contacts on InP is controlled by chemical and metallurgical reaction between the contact metal and the InP layer, and a few InAux formations are beneficial to contact properties.

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台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;

2. 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083;

3. 中国科学院研究生院,北京100049;

4. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

刊出日期: 2011-12-25

English Abstract

Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors

1. State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;

2. Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;

3. Graduate University of the Chinese Academy of Sciences,Beijing 100049,China;

4. State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China

Publish Date: 2011-12-25

Abstract: The electrical and metallurgical behavior of Ti/Pt/Au contacts on p-InP was investigated. The contacts were transformed to an ohmic contacts at the temperature about 450 ℃. Low resistance ohmic contacts (c=7.310-5cm2) were achieved after annealing at 450 ℃ for 4 minutes. To approach device process, Cr/Au (20 nm/400 nm) was deposited on the contact pads after the annealing process. The result indicates that the contacts of low resistance, smooth surface and high reliability are fabricated in a moderate condition. The auger electron spectroscopy(AES) depthcomposition profiles indicates that the Pt layer can relatively prevent Au from penetrating into the InP and only a small quantity of Au punched through the Pt layer and penetrated into the InP. The findings of the present study suggests that the formation of ohmic contacts on InP is controlled by chemical and metallurgical reaction between the contact metal and the InP layer, and a few InAux formations are beneficial to contact properties.

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台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors

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台面型InP/InGaAs PIN 光伏探测器的p-InP低阻欧姆接触

English Abstract

Low resistance ohmic contacts to p-InP of mesa-isolated InP/InGaAs PIN photovoltaic detectors

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