GaN基雪崩光电二极管及其研究进展

刘福浩; 许金通; 王玲; 王荣阳; 李向阳

GaN基雪崩光电二极管及其研究进展

刘福浩^1,3,
许金通^2,3,
王玲^2,3,
王荣阳^1,3,
李向阳^2,3

1.
中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;
2.
中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083;
3.
中国科学院大学,北京100049

基金项目:

国家自然科学基金（60907048）;上海市自然科学基金（10ZR1434500）

详细信息

作者简介:
刘福浩（1987- ），男，博士生，主要从事GaN基雪崩光电二极管方面的研究。Email：liufuhao@mail.ustc.edu.cn；李向阳（1969- ），男，博士，研究员，主要从事半导体光电探测器方面的研究工作。Email：lixy@mail.sitp.ac.cn

刘福浩（1987- ），男，博士生，主要从事GaN基雪崩光电二极管方面的研究。Email：liufuhao@mail.ustc.edu.cn；李向阳（1969- ），男，博士，研究员，主要从事半导体光电探测器方面的研究工作。Email：lixy@mail.sitp.ac.cn

中图分类号: TN23

GaN-based avalanche photodiodes and its recent development

1.
State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
2.
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
3.
University of Chinese Academy of Sciences,Beijing 100049,China

摘要: 越来越多的民用与军事对高灵敏度紫外探测的需求促进了GaN基雪崩光电二极管（APD）的快速发展。雪崩光电二极管工作在高反偏电压状态，器件内部载流子在高场下发生碰撞离化，从而使探测信号产生增益。首先对GaN基雪崩光电二极管的研究进展进行了回顾，然后重点报道了器件的增益最大可达3105，介绍了本征层厚度与器件暗电流的关系，简单介绍了正在组建的基于相敏探测的交流增益测试系统，并研究了过剩噪声与调制频率之间的关系，发现在低频波段（30~2kHz），过剩噪声呈现1/f噪声特性。最后，对盖革模式的雪崩光电二极管的研究进展及应用前景进行了简单介绍。
- 雪崩光电二极管 /
- 增益 /
- 暗电流 /
- 噪声 /
- 盖革模式
Abstract: The investigation of GaN-based avalanche photodiodes(APDs) was motivated by the demand of high sensitivity ultraviolet detectors in numerous civilian and military applications. APDs operate under high reverse bias voltage, and carriers in the device caused impact ionization under high electric fields, as a result, the avalanche multiplication could be obtained. In this paper, reviews were made on the development of GaN-based avalanche photodiodes, the largest value of gain in this work was nearly 3105. Relationship between width of the intrinsic layer and dark current has been studied. The measuring system based on phase sensitive detecting technique has been shown. Relationships between modulating frequencies and noise has also been investigated. It was found that in the range of low frequency(30-2 kHz), the excess noise behaved as 1/f noise. In the end, the recent developments and applications of the Geiger mode operations of GaN-based APDs are introduced.
- avalanche photodiodes /
- gain /
- dark current /
- noise /
- Geiger mode

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GaN基雪崩光电二极管及其研究进展

GaN-based avalanche photodiodes and its recent development

计量

GaN基雪崩光电二极管及其研究进展

1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;

2. 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083;

3. 中国科学院大学,北京100049

English Abstract

GaN-based avalanche photodiodes and its recent development

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留言板

GaN基雪崩光电二极管及其研究进展

GaN-based avalanche photodiodes and its recent development

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出版历程

GaN基雪崩光电二极管及其研究进展

1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083; 2. 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083; 3. 中国科学院大学,北京100049

English Abstract

GaN-based avalanche photodiodes and its recent development

全文HTML

目录

1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;

2. 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083;

3. 中国科学院大学,北京100049