红外探测器倒装互连技术进展

耿红艳; 周州; 宋国峰; 徐云

红外探测器倒装互连技术进展

1.
中国科学院半导体研究所纳米光电子实验室,北京100083

基金项目:

国家自然科学基金（61036010，61177070）;国家重点“973 计划”基础研究发展计划（2011CBA00608，2012CB619203）;国家科技重大专项计划（2011ZX01015-001）;北京市自然科学基金（4112058）

详细信息

作者简介:
耿红艳（1987-），女，硕士生，主要从事InGaAs 近红外探测器方面的研究。Email：genghy@semi.ac.cn；徐云（1974-），女，研究员，博士，主要从事红外探测器工艺方面的研究。Email：xuyun@semi.ac.cn

耿红艳（1987-），女，硕士生，主要从事InGaAs 近红外探测器方面的研究。Email：genghy@semi.ac.cn；徐云（1974-），女，研究员，博士，主要从事红外探测器工艺方面的研究。Email：xuyun@semi.ac.cn

中图分类号: TN215

Flip chip bonding technology for IR detectors

1.
Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

摘要: 随着红外焦平面技术的发展，红外探测器探测波段已由单波段变为双色及四色波段，半导体元件的封装数量由最初的数十个发展到数百万个，I/O输出密度不断增大，传统微互联技术如引线键合技术、载带自动焊技术等已根本无法满足器件要求。倒装焊技术以其封装尺寸小、互联密度高、生产成本低的特点越来越受到人们的亲睐。倒装互连工艺主要包括：UBM 制备、铟膜沉积、回流成球、倒压焊、填充背底胶。介绍了各工艺步骤的发展状况，并对铟膜沉积、铟柱增高工艺进行详细阐述。
- 打底金属 /
- 铟柱 /
- 回流 /
- 倒压焊 /
- 底部填充胶
Abstract: Two-color and four-color detectors have been emerged as the development of Infrared Focal Plane Array technology. Millions of pixels have arisen on the chips and the spot pitch is even less than 13 micron. So high I/O density makes the fabrication more critical. This is beyond the ability of traditional micro-interconnection technology such as wire bonding (WB) technology and tape automated bonding (TAB) technology. Flip chip hybridization offers numbers of advantages over the widely used wire bonding technique such as small package size, high interconnect density and low cost. It consists of procedures: Under Bump Metallization deposition, indium deposition, reflowing, flip-chip bonding and inserting the underfill. Development of every procedure was performed. And the indium bumps were also emphasized for that indium bumping was a critical technology in the application of high-density interconnection between a focal plane array and a Si read-out integrated circuit (ROIC) by flip chip bonding.
- UBM /
- indium bump /
- reflow /
- flip chip bond /
- underfills

[1]	Shi Yanli. Choice and development of the third-generation infrared detectors [J]. Infrared Technology, 2013, 35 (1): 104-108. (in Chinese) 史衍丽. 第三代红外探测器的发展与选择[J]. 红外技术, 2013, 35(1): 104-108.
[2]
[3]	Jin Jupeng, Liu Dan, Wang Jianxin, et al. 320 256 GaAs/ AlGaAs long-wavelength quantum well infrared photodetector focal plane array [J]. Infrared and Laser Engineering, 2012, 41(4): 833-837. (in Chinese) 金巨鹏, 刘丹, 王建新, 等. 320256 GaAs/AlGaAs 长波红外量子阱焦平面探测器[J]. 红外与激光工程, 2012, 41(4): 833-837.
[4]
[5]
[6]	Sang Jun Lee, Zahyun Ku, Ajit Barve, et al. A monolithically integrated plasmonic infrared quantum dot camera[J]. Nat Commun, 2011, 286: 1-6.
[7]
[8]	Liu Liping. Status and trend of the readout circuit technology for IR FPA [J]. Laser Infrared, 2007, 37 (7): 598-600. (in Chinese) 刘莉萍. 红外焦平面读出电路技术及发展趋势[J]. 红外与激光工程, 2007, 37(7): 598-600.
[9]	Li Xianjie, Liu Yingbin, Feng Zhen, et al. AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. Infrared and Laser Engineering, 2007, 36(4): 435-438. (in Chinese) 李献杰,刘英斌,冯震,等.基于MOCVD 技术的长波AlGaAs/ GaAs 量子阱红外焦平面探测器[J]. 红外与激光工程, 2007, 36(4): 435-438.
[10]
[11]
[12]	Li Jinjian. The flip chip for in connected of infrared focal- plane[J]. Electronics Packaging, 2010, 10(6): 6-11. (in Chinese) 李金健. 应用于红外焦平面铟柱互连的封装技术[J]. 电子与封装, 2010, 10(6): 6-11.
[13]
[14]	Kimberley A Olver. Flip chip hybridization using indium bump technology at ARL, ADA470149. Adelphi MD: Army Research Laboratory, 2007.
[15]
[16]	Merken P, John J, Zimmermann L, et al. Technology for very dense hybrid detector arrays using electroplated indium solderbumps[J]. IEEE Transactions on Advanced Packaging, 2003, 26(1): 60-64.
[17]
[18]	Tian Yingtao, Liu Changqing, David Hutt, et al. Electrodeposition of indium for bump bonding [C]//2008 Electronic Components and Technology Conference, 2008: 2096-2100.
[19]
[20]	Yang Mengli, Feng Zhen. Fabrication of In bump for 128 128 QW infrared photodetector array [J]. Nanoelectronic Device Technology, 2006, 11: 512-514. (in Chinese) 杨孟丽, 冯震. 128128 GaAs 量子阱红外焦平面探测器阵列铟柱制备[J]. 纳米器件与技术, 2006, 11: 512-514.
[21]	Kim H S, Plis E, Myers S, et al. Improved performance of InAs/GaSb Strained Layer Superlattice detectors with SU-8 passivation[C]//SPIE, 2009, 7467: 1-9.
[22]
[23]
[24]	Huang Qiuping, Wang Dongliang, Xu Gaowei, et al.Analysis of the phenomenon of falling off of indium bumps from substrate during reflow process [C]//2010 11th International Conference on Electronic Packaging Technology High Density Packaging, 2010: 267-270.
[25]	Zhang Wanrong, Li Zhiguo, Guo Weiling, et al. The diffusion barrier layer in the ohmic contact of the semiconductor device [J]. Microelectronics Computer, 1998, 15(5): 53-56. (in Chinese) 张万荣, 李志国, 郭伟玲, 等. 半导体器件欧姆接触中的扩散阻挡层[J]. 微电子学与计算机, 1998, 15(5): 53-56.
[26]
[27]
[28]	Xie Heng, Liang Zongjiu, Yang Yaru. Effect of UBM of ROIC on indium bump height [J]. Laser Infrared, 2011, 41(1): 63-66. (in Chinese) 谢珩, 梁宗久, 杨雅茹. 读出电路铟柱打底层对铟柱成球高度的影响[J]. 激光与红外, 2011, 41(1): 63-66.
[29]	Roesch William J, Suwanna Jittinorasett. Cycling copper flip chip interconnects[J]. Microelectronics Reliability, 2004, 44: 1047-1054.
[30]
[31]
[32]	Enric Cabruja, Marc Bigas, Miguel Ullan, et al. Special bump bonding technique for silicon pixel detectors [J]. Nuclear Instruments and Methods in Physics Research A, 2007, 576: 150-153.
[33]
[34]	Li Fuquan, Wang Chunqing, Zhang Xiaodong. Bump fabrication methods for flip chip [J]. Electronics Process Technology, 2003, 9(l0): 62-66. (in Chinese) 李福泉, 王春青, 张晓东. 倒装芯片凸点制作方法[J]. 电子工艺技术, 2003, 9(l0): 62-66.
[35]	Huang Qiuping, Xu Gaowei, Luo Le. Indium bump fabricated with electroplating method [C]//2009 International Conference on Electronic Packaging Technology High Density Packaging, 2009: 650-654.
[36]
[37]	Zhang Peng, Li Zhen, Zhao Kai. The In bump growth on the large scale MCT IR device [J]. Laser Infrared, 2008, 38(8): 781-783. (in Chinese) 张鹏, 李震,赵凯.新型大面阵碲镉汞探测器In 柱生长工艺研究[J]. 激光与红外, 2008, 38(8): 781-783.
[38]
[39]	Geng Xiaobao, Pragnesh Patel, Meng D D. A self-adaptive thermal switch array to stabilize the temperature of MEMS devices [C]//2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems, 2010: 148-151
[40]
[41]
[42]	Huang Qiuping, Xu Gaowei, Yuan Yuan, et al. Development of indium bumping technology through AZ9260 resist electroplating[J]. J Micromech Microeng, 2010, 20(5): 1-9.
[43]	Chen Mingyuan, Sun Ping, Li Junwu, et al. A flip-chip bonding of Au-In bumps in MEMS device [J]. Chinese Journal of Electron Devices , 2010 , 33(3): 258-261. (in Chinese) 陈明园, 孙萍, 李俊伍, 等. 一种用于MEMS 器件的Au-In 倒装焊技术[J]. 电子器件, 2010, 33(3): 258-261.
[44]
[45]	Fu Yifeng, Ye Lilei, Liu Johan. Thick film patterning by lift-off process using double-coated single photoresists [J]. Materials Letters, 2012, 76: 117-119.
[46]
[47]	Jiang Jutao, Stanley Tsao, Thomas O'Sullivan, et al. Fabrication of indium bumps for hybrid infrared focal plane array applications[J]. Infrared Physics Technology, 2004, 45: 143-151.
[48]
[49]
[50]	Shen Tianzhu. Indium bump reflowing flip chip inter- connection of infrared focal plane array detectors[J]. Infrared Technology, 2007, 29(2): 96-98. (in Chinese) 沈天铸. 红外焦平面探测器互连中的In 缩球工艺[J]. 红外技术, 2007, 29(2): 96-98.
[51]	Aidar M Biktashov1, Nikolai B Kuzmin, Andrei G Paulish. indium bumps investigation for the flip-chip assembly [C]// 7th International Siberian Workshop and Tutorial EDM'2006, 2006.
[52]
[53]
[54]	Frank Greer, Matthew Dickie, Vasquez R P, et al. Plasma treatment methods to improve indium bump bonding via indium oxide removal [J]. J Vac Sci Technol B, 2009, 27(5): 2132-2137.
[55]
[56]	Zhang Caiyun, Ren Chengping. Flip-chip bonding technology[J]. Electronics Packaging, 2005, 5(4): 13-15. (in Chinese) 张彩云, 任成平. 凸点芯片倒装焊接技术[J]. 电子与封装, 2005, 5(4): 13-15.
[57]	Zhang Guodong, Gong Qibing, Su Hongyi, et al. Research on flip-chip bonding techniques for hybrid focal plane array applications[J]. Infrared Technology, 2006, 28(3): 125-128. (in Chinese) 张国栋, 龚启兵, 苏宏毅, 等. 混成式焦平面阵列芯片倒装互连技术研究[J]. 红外技术, 2006, 28(3): 125-128.
[58]
[59]	Gemme C, Fiorello A M, Gagliardi G, et al. Study of indium bumps for the ATLAS pixel detector[C]//IEEE NSSMIC 2003 Conference, 2003, N3-2: 59-62.
[60]
[61]
[62]	Zhang Xining. Improved blind element inspection algorithm of infrared FPA array [J]. Laser Infrared, 2010, 40(10): 1149-1153. (in Chinese) 张熙宁. 一种改进的红外焦平面阵列盲元检测算法[J]. 激光与红外, 2010, 40(10): 1149-1153.
[63]	Gilleo K. New generation underfills power the 2nd flip chip revolution [C]//Pan Pacific Microelectronics Symposium, 1996: 147-154.
[64]
[65]	Zhang Zhuqing, Wong C P. Recent advances in flip-chip underfill: materials, process, and reliability [J]. IEEE Transactions on Advanced Packing, 2004, 27(3): 515-524.

[1]	杨正伟, 陈金树, 田干, 张炜, 陈家威, 肖俊玲. 2195-T8铝锂合金激光填丝双面焊熔池行为与接头力学性能研究 . 红外与激光工程, 2023, 52(2): 20220350-1-20220350-9. doi: 10.3788/IRLA20220350
[2]	王瑞聪, 张志, 徐昌骏, 王顺宾, 贾世杰, 王鹏飞. 中红外氟铟基玻璃及光纤激光器最新研究进展（特邀） . 红外与激光工程, 2023, 52(5): 20230149-1-20230149-10. doi: 10.3788/IRLA20230149
[3]	田笑含, 张江风, 张晓玲, 孟庆端. 隔离槽对锑化铟探测器芯片断裂的影响 . 红外与激光工程, 2022, 51(5): 20210599-1-20210599-5. doi: 10.3788/IRLA20210599
[4]	王家天, 刘闯, 任姣姣, 张丹丹, 顾健. 多层胶接结构胶层均匀性的太赫兹时域表征方法 . 红外与激光工程, 2022, 51(6): 20210430-1-20210430-7. doi: 10.3788/IRLA20210430
[5]	贾甜甜, 董海亮, 贾志刚, 张爱琴, 梁建, 许并社. n波导层铟组分对GaN基绿光激光二极管光电性能的影响 . 红外与激光工程, 2021, 50(10): 20200489-1-20200489-10. doi: 10.3788/IRLA20200489
[6]	高琳华, 崔艳霞, 梁强兵, 刘艳珍, 李国辉, 范明明, 郝玉英. 金属−无机半导体−金属光电探测器的研究进展 . 红外与激光工程, 2020, 49(8): 20201025-1-20201025-19. doi: 10.3788/IRLA20201025
[7]	刘正君, 耿勇, 谭久彬. 基于柱透镜多旋转测量的计算成像 . 红外与激光工程, 2019, 48(6): 603016-0603016(5). doi: 10.3788/IRLA201948.0603016
[8]	张爱武, 赵江华, 赵宁宁, 康孝岩, 郭超凡. 结合张量空间与倒易晶胞的高光谱影像去噪去混叠 . 红外与激光工程, 2018, 47(10): 1026002-1026002(10). doi: 10.3788/IRLA201847.1026002
[9]	李波, 董明利, 张帆. 端面不透光的PDMS微柱阵列制备与图像处理方法研究 . 红外与激光工程, 2018, 47(12): 1226003-1226003(8). doi: 10.3788/IRLA201847.1226003
[10]	赵林, 王纪强, 李振. 光纤负压波管道泄漏监测系统 . 红外与激光工程, 2017, 46(7): 722002-0722002(6). doi: 10.3788/IRLA201746.0722002
[11]	关奇, 杜太焦, 陈志华, 闫伟, 彭国良. 亚声速球/柱尾流对激光传输影响的数值模拟 . 红外与激光工程, 2017, 46(9): 906005-0906005(7). doi: 10.3788/IRLA201746.0906005
[12]	关奇, 杜太焦, 陈志华, 闫伟, 彭国良. 亚声速横向球/柱流场对激光传输影响的数值模拟 . 红外与激光工程, 2016, 45(12): 1211002-1211002(2). doi: 10.3788/IRLA201645.1211002
[13]	沈同圣, 史浩然, 娄树理, 李召龙. 填充因子对微扫描系统成像质量影响分析 . 红外与激光工程, 2015, 44(8): 2292-2297.
[14]	童劲超, 黄敬国, 黄志明. 基于铟镓砷材料的新型太赫兹/亚毫米波探测器研究 . 红外与激光工程, 2014, 43(10): 3347-3351.
[15]	刘强, 何欣, 张峰. 航天光学遥感器指向镜用胶选择 . 红外与激光工程, 2014, 43(S1): 183-187.
[16]	华桦, 何凯, 周松敏, 胡晓宁. 利用MATLAB 进行焦平面探测器的In 柱高度自动统计 . 红外与激光工程, 2014, 43(7): 2148-2151.
[17]	王波, 陈东林, 周留成, 何卫锋. 激光冲击波加载金属材料中心压应力缺失效应 . 红外与激光工程, 2014, 43(11): 3521-3526.
[18]	吴幸智, 刘大军, 杨俊义, 宋瑛林. 新型金属铟酞菁酯的光学非线性和光限幅特性 . 红外与激光工程, 2014, 43(1): 108-112.
[19]	王东生, 马兆光, 王维明. 激光全息法检测固体药柱包覆层缺陷 . 红外与激光工程, 2013, 42(2): 376-380.
[20]	李冰, 赵跃进, 褚旭红, 孔令琴, 张镜水, 王鹏, 朱维文. 基于柱透镜的非成像式激光定向方法 . 红外与激光工程, 2013, 42(3): 611-615.

点击查看大图

计量

文章访问数: 629
HTML全文浏览量: 194
PDF下载量: 330
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

留言板

红外探测器倒装互连技术进展

Flip chip bonding technology for IR detectors

计量

红外探测器倒装互连技术进展

1. 中国科学院半导体研究所纳米光电子实验室,北京100083

English Abstract

Flip chip bonding technology for IR detectors

1. Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

全文HTML

目录

留言板

红外探测器倒装互连技术进展

Flip chip bonding technology for IR detectors

计量

出版历程

红外探测器倒装互连技术进展

1. 中国科学院半导体研究所纳米光电子实验室,北京100083

English Abstract

Flip chip bonding technology for IR detectors

1. Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

全文HTML

目录