分子束外延InAlSb红外探测器光电性能的温度效应

陈刚; 李墨; 吕衍秋; 朱旭波; 曹先存

doi:10.3788/IRLA201746.1204003

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分子束外延InAlSb红外探测器光电性能的温度效应

陈刚, 李墨, 吕衍秋, 朱旭波, 曹先存

文章导航 > 红外与激光工程 > 2017 > 46(12): 1204003-1204003(5)

陈刚, 李墨, 吕衍秋, 朱旭波, 曹先存. 分子束外延InAlSb红外探测器光电性能的温度效应[J]. 红外与激光工程, 2017, 46(12): 1204003-1204003(5). doi: 10.3788/IRLA201746.1204003

引用本文:

Chen Gang, Li Mo, Lv Yanqiu, Zhu Xubo, Cao Xiancun. Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy[J]. Infrared and Laser Engineering, 2017, 46(12): 1204003-1204003(5). doi: 10.3788/IRLA201746.1204003

Citation:

Chen Gang, Li Mo, Lv Yanqiu, Zhu Xubo, Cao Xiancun. Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy[J]. Infrared and Laser Engineering, 2017, 46(12): 1204003-1204003(5). doi: 10.3788/IRLA201746.1204003

分子束外延InAlSb红外探测器光电性能的温度效应

doi: 10.3788/IRLA201746.1204003

陈刚¹,
李墨¹,
吕衍秋^1,2,
朱旭波¹,
曹先存^1,2

1.
中国空空导弹研究院,河南洛阳 471009;
2.
红外探测器技术航空科技重点实验室,河南洛阳 471009

基金项目:

国家国际科技合作专项项目（2014DFR50790）

详细信息

作者简介:
陈刚(1989-),男,硕士,主要从事红外探测器方面的研究。Email:chgang1027@163.com

中图分类号: TN213

Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy

1.
China Airborne Missile Academy,Luoyang 471009,China;
2.
Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China

摘要: 采用分子束外延生长方法在InSb （100）衬底上生长p+-p+-n-n+势垒型结构的In1-xAlxSb外延层。运用X射线衍射对材料的晶体质量及Al组分进行测试和表征，InAlSb外延层的半峰宽为0.05，表明外延材料的单晶性能良好，并通过布拉格方程和维戈定律计算出Al组分为2.5%。然后将外延材料制备成多元红外探测并测得77~210 K下的光谱响应曲线，实验发现探测器的截止波长从77 K时的4.48 m增加至210 K时的4.95 m。通过数据拟合得出In0.975Al0.025Sb禁带宽度的Varshni关系式以及其参数Eg（0）、和的值分别为0.238 6 eV，2.8710-4 eV/K，166.9 K。经I-V测试发现，在110 K，-0.1 V偏压下，器件的暗电流密度低至1.0910-5 A/cm-2，阻抗为1.40104 cm2，相当于77 K下InSb探测器的性能。同时分析了温度对器件不同类型的暗电流的影响程度，并得到器件的扩散电流与产生-复合电流的转变温度约为120 K。
- 分子束外延 /
- InAlSb /
- 光电特性 /
- 红外探测器
Abstract: The In1-xAlxSb epitaxial layers of p+-p+-n-n+ barrier structure were grown on the InSb(100) substrate by molecular beam epitaxy. The crystal quality and Al composition of the material were measured and characterized by X-ray diffraction. The full width at half maximum of the InAlSb epitaxial layer was 0.05, indicating good performance monocrystalline epitaxial material. The Al content of 2.5% was calculated according to Bragg's formula and Vegard's law. When the InAlSb material was fabricated as an infrared detector diode and the spectral response curve was measured at 77 K to 210 K, it was found that the cutoff wavelength of the detector increased from 4.48 m at 77 K to 4.95 m at 210 K. By fitting the Varshni relation of In0.975Al0.025Sb with the experimental data of bandgap, the values of Eg(0), and are 0.238 6 eV, 2.8710-4 eV/K and 166.9 K, respectively. After the I-V test, the dark current density reached as low as 1.0910-5 A/cm-2 and the resistance area product is 1.40104 cm2 at 110 K, -0.1 V bias, which is equivalent to the performance of InSb detector at 77 K. Besides, the influence of the temperature on different types of dark current was analyzed, and the transition temperature between the diffusion current and G-R current was 120 K.
- molecular beam epitaxy /
- InAlSb /
- photoelectric properties /
- infrared detectors

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分子束外延InAlSb红外探测器光电性能的温度效应

doi: 10.3788/IRLA201746.1204003

1. 中国空空导弹研究院,河南洛阳 471009;

2. 红外探测器技术航空科技重点实验室,河南洛阳 471009

作者简介:
陈刚(1989-),男,硕士,主要从事红外探测器方面的研究。Email:chgang1027@163.com

收稿日期: 2017-04-05
修回日期: 2017-05-03
刊出日期: 2017-12-25

基金项目:

国家国际科技合作专项项目（2014DFR50790）

中图分类号: TN213

关键词:

摘要: 采用分子束外延生长方法在InSb （100）衬底上生长p+-p+-n-n+势垒型结构的In1-xAlxSb外延层。运用X射线衍射对材料的晶体质量及Al组分进行测试和表征，InAlSb外延层的半峰宽为0.05，表明外延材料的单晶性能良好，并通过布拉格方程和维戈定律计算出Al组分为2.5%。然后将外延材料制备成多元红外探测并测得77~210 K下的光谱响应曲线，实验发现探测器的截止波长从77 K时的4.48 m增加至210 K时的4.95 m。通过数据拟合得出In0.975Al0.025Sb禁带宽度的Varshni关系式以及其参数Eg（0）、和的值分别为0.238 6 eV，2.8710-4 eV/K，166.9 K。经I-V测试发现，在110 K，-0.1 V偏压下，器件的暗电流密度低至1.0910-5 A/cm-2，阻抗为1.40104 cm2，相当于77 K下InSb探测器的性能。同时分析了温度对器件不同类型的暗电流的影响程度，并得到器件的扩散电流与产生-复合电流的转变温度约为120 K。

English Abstract

Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy

1. China Airborne Missile Academy,Luoyang 471009,China;

2. Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China

Received Date: 2017-04-05
Rev Recd Date: 2017-05-03
Publish Date: 2017-12-25

Keywords:

Abstract: The In1-xAlxSb epitaxial layers of p+-p+-n-n+ barrier structure were grown on the InSb(100) substrate by molecular beam epitaxy. The crystal quality and Al composition of the material were measured and characterized by X-ray diffraction. The full width at half maximum of the InAlSb epitaxial layer was 0.05, indicating good performance monocrystalline epitaxial material. The Al content of 2.5% was calculated according to Bragg's formula and Vegard's law. When the InAlSb material was fabricated as an infrared detector diode and the spectral response curve was measured at 77 K to 210 K, it was found that the cutoff wavelength of the detector increased from 4.48 m at 77 K to 4.95 m at 210 K. By fitting the Varshni relation of In0.975Al0.025Sb with the experimental data of bandgap, the values of Eg(0), and are 0.238 6 eV, 2.8710-4 eV/K and 166.9 K, respectively. After the I-V test, the dark current density reached as low as 1.0910-5 A/cm-2 and the resistance area product is 1.40104 cm2 at 110 K, -0.1 V bias, which is equivalent to the performance of InSb detector at 77 K. Besides, the influence of the temperature on different types of dark current was analyzed, and the transition temperature between the diffusion current and G-R current was 120 K.