GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

尚金铭; 张宇; 杨成奥; 谢圣文; 黄书山; 袁野; 张一; 邵福会; 徐应强; 牛智川

doi:10.3788/IRLA201847.1003004

GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

doi: 10.3788/IRLA201847.1003004

尚金铭^1,2,
张宇^1,2,
杨成奥^1,2,
谢圣文^1,2,
黄书山^1,2,
袁野^1,2,
张一^1,2,
邵福会^1,2,
徐应强^1,2,
牛智川^1,2

1.
中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083;
2.
中国科学院大学材料科学与光电技术学院,北京 100049

基金项目:

国家自然科学基金（61790580）;国家973计划（2014CB643903）

详细信息

作者简介:
尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

中图分类号: TN24

Research progress of GaSb based optically pumped semiconductor disk lasers (invited)

1.
State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
2.
College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

摘要: GaSb基光泵浦半导体碟片激光器（OP-SDLs）可以获得高光束质量和高功率的红外激光输出，是近年来新型中红外激光器件研究领域的热点。文中介绍了GaSb基光泵浦半导体碟片激光器增益芯片的外延结构和工作原理，综述了2 m波段GaSb基泵浦半导体碟片激光器的研究进展，讨论了该类激光器的波长扩展、功率提升、实现窄线宽短脉冲发射和有效热管理关键问题，评述了性能发展的主要技术方向和应用前景。
- GaSb基光泵浦半导体碟片激光器 /
- 2 μm /
- 热管理 /
- 高光束质量
Abstract: GaSb based optically pumped semiconductor disk lasers (OP-SDLs) attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power. The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized. The development of GaSb based OP-SDLs at 2 m wavelength was reviewed respectively by analyzing the aspects of wavelength extending, power scaling, line-width narrowing, short-pulse generation and effective thermal management. The technical development direction and application prospects of this type of laser were discussed.
- GaSb based optically pumped semiconductor disk lasers /
- 2 μm /
- thermal management /
- excellent beam quality

[1]	Zhang Dongyan, Wang Rongrui. Progress on mid-infrared lasers[J]. Laser and Infrared, 2011, 41(5):487-491. (in Chinese)
[2]	Nikitichev A A, Stepanov A I. 2-mm lasers for optical monitoring[J]. Journal of Optical Technology c/c of Opticheskii Zhurnal, 1999, 66(66):718-723.
[3]	Werle P. A review of recent advances in semiconductor laser based gas monitors[J]. Spectrochimica Acta Part A Molecular Biomolecular Spectroscopy, 1998, 54(2):197-236.
[4]	Mikhailova M P, Titkov A N. Type Ⅱ heterojunctions in the GaInAsSb/GaSb system[J]. Semiconductor Science Technology, 1994, 9(7):1279-1284.
[5]	Baranov A N, Cuminal Y, Boissier G, et al. Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy[J]. Semiconductor Science Technology, 1996, 11(8):1185-1190.
[6]	Tilma B W, Mangold M, Zaugg C A, et al. Recent advances in ultrafast semiconductor disk lasers[J]. Light Science Applications, 2015, 4(7):e310.
[7]	Ville-Markus Korpijrvi, Kantola E L, Leinonen T, et al. Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(6):480-484.
[8]	Kantola E, Leinonen T, Ranta S, et al. 1180 nm VECSEL with 50 W output power[C]//SPIE, 2015, 9349:93490U.
[9]	Kantola E, Leinonen T, Penttinen J P, et al. 615 nm GaInNAs VECSEL with output power above 10 W[J]. Optics Express, 2015, 23(16):20280.
[10]	Myara M, Garnache A. Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR[C]//SPIE, 2017, 10087:1008704.
[11]	Burns D, Hopkins J M, Kemp A J, et al. Recent developments in high-power short-wave mid-infrared semiconductor disk lasers[C]//SPIE, 2009:7193.
[12]	Rsener B, Rattunde M, Kaspar S, et al. GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8m wavelength range[C]//SPIE, 2010, 7578:75780X.
[13]	Kaspar S, Rattunde M, Tpper T, et al. Recent advances in 2-m GaSb-based semiconductor disk laser-power scaling, narrow-linewidth and short-pulse operation[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4):1501908.
[14]	Schulz N, Rattunde M, Manz C, et al. Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3m[J]. IEEE Photonics Technology Letters, 2006, 18(9):1070-1072.
[15]	Corzine S W, Geels R S, Scott J W, et al. Design of Fabry-Perot surface-emitting lasers with a periodic gain structure[J]. IEEE Journal of Quantum Electronics, 1989, 25(6):1513-1524.
[16]	Cerutti L, Garnache A, Genty F, et al. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1m[J]. Electronics Letters, 2003, 39(3):290-292.
[17]	Hopkins J M, Hempler N, Rsener B, et al. High-power,(AlGaIn)(AsSb) semiconductor disk laser at 2.0m[J]. Optics Letters, 2008, 33(2):201-203.
[18]	Paajaste J, Suomalainen S, Koskinen R, et al. High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2m[J]. Journal of Crystal Growth, 2009, 311(7):1917-1919.
[19]	Holl P, Rattunde M, Adler S, et al. GaSb-based 2.0m SDL with 17 W output power at 20℃[J]. Electronics Letters, 2016, 52(21):1794-1795.
[20]	Cerutti L, Garnache A, Ouvrard A, et al. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3m[J]. Journal of Crystal Growth, 2004, 268(1-2):128-134.
[21]	Cerutti L, Garnache A, Ouvrard A, et al. 2.36m diode pumped VCSEL operating at room temperature in continuous wave with circular TEM 00, output beam[J]. Electronics Letters, 2004, 40(14):869-871.
[22]	Rattunde M, Schulz N, Rsener B, et al. High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3m[C]//SPIE, 2007, 6479:647915.
[23]	Rsener B, Rattunde M, Moser R, et al. GaSb-based optically pumped semiconductor disk laser using multiple gain elements[J]. IEEE Photonics Technology Letters, 2009, 21(13):848-850.
[24]	Paajaste J, Koskinen R, Nikkinen J, et al. Power scalable 2.5m (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy[J]. Journal of Crystal Growth, 2011, 323(1):454-456.
[25]	Holl P, Rattunde M, Wagner J. Optimization of 2.5m VECSEL:influence of the QW active region[C]//SPIE, 2016, 97340:97340S.
[26]	Rsener B, Rattunde M, Moser R, et al. Continuous-wave room-temperature operation of a 2.8m GaSb-based semiconductor disk laser[J]. Optics Letters, 2011, 36(3):319-321.
[27]	Holl P, Rattunde M, Adler S, et al. GaSb-based VECSEL for high-power applications and Ho-pumping[C]//SPIE, 2017, 10087:1008705.
[28]	Holms M A, Burns D, Ferguson A I, et al. Actively stabilized single-frequency vertical-external-cavity AlGaAs laser[J]. Photonics Technology Letters IEEE, 1999, 11(12):1551-1553.
[29]	Cerutti L, Garnache A, Ouvrard A, et al. Vertical cavity surface emitting laser sources for gas detection[J]. Physica Status Solidi, 2005, 202(4):631-635.
[30]	Hopkins J M, Maclean A J, Burns D, et al. Tunable, single-frequency, diode-pumped 2.3m VECSEL[C]//Lasers and Electro-Optics, and Quantum Electronics, 2008, 15(13):1-2.
[31]	Kaspar S, Rosener B, Rattunde M, et al. Sub-MHz-linewidth 200 mW actively stabilized 2.3m semiconductor disk laser[J]. IEEE Photonics Technology Letters, 2011, 23(20):1538-1540.
[32]	Rsener B, Kaspar S, Rattunde M, et al. 2m semiconductor disk laser with a heterodyne linewidth below 10 kHz[J]. Optics Letters, 2011, 36(18):3587-3589.
[33]	Kaspar S, Rattunde M, Tpper T, et al. Semiconductor disk laser at 2.05m wavelength with 100 kHz linewidth at 1 W output power[J]. Applied Physics Letters, 2012, 100(3):407-415.
[34]	Kaspar S, Rattunde M, Topper T, et al. Linewidth narrowing and power scaling of single-frequency 2.X m GaSb-based semiconductor disk lasers[J]. IEEE Journal of Quantum Electronics, 2013, 49(3):314-324.
[35]	Price J H V, Monro T M, Ebendorff-Heidepriem H, et al. Mid-IR supercontinuum generation from nonsilica microstructured optical fibers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(3):738-749.
[36]	Yarborough J M, Lai Y Y, Kaneda Y, et al. Record pulsed power demonstration of a 2m GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate[J]. Applied Physics Letters, 2009, 95(8):645109.
[37]	Lai Y Y, Yarborough J M, Kaneda Y, et al. 340 W peak power from a GaSb 2m optically pumped semiconductor laser(OPSL) grown mismatched on GaAs[J]. IEEE Photonics Technology Letters, 2010, 22(16):1253-1255.
[38]	Hrknen A, Paajaste J, Suomalainen S, et al. Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2m[J]. Optics Letters, 2010, 35(24):4090-4092.
[39]	Harkonen A, Grebing C, Paajaste J, et al. Mode-locked GaSb disk laser producing 384 fs pulses at 2m wavelength[J]. Electronics Letters, 2011, 47(7):454-456.
[40]	Kaspar S, Rattunde M, Topper T, et al. Electro-optically cavity dumped 2m semiconductor disk laser emitting 3 ns pulses of 30 W peak power[J]. Applied Physics Letters, 2012, 101(14):1063-1087.
[41]	Schulz N, Rattunde M, Wagner J, et al. GaSb-based VECSELs emitting at around 2.35m employing different optical pumping concepts[C]//Photonics Europe, 2006:6184.
[42]	Schulz N, Rattunde M, Ritzenthaler C, et al. Resonant optical in-well pumping of an (AlGaIn)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35m[J]. Applied Physics Letters, 2007, 91(9):1063-1069.
[43]	Holl P, Rattunde M, Adler S, et al. Recent advances in power scaling of GaSb-based semiconductor disk lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(6):324-335.
[44]	Perez J P, Laurain A, Cerutti L, et al. Technologies for thermal management of mid-IR Sb-based surface emitting lasers[J]. Semiconductor Science Technology, 2017, 25(4):045021.
[45]	Devautour M, Michon A, Beaudoin G, et al. Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near-and mid-IR[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4):1701108.
[46]	Liau Z L. Semiconductor wafer bonding via liquid capillarity[J]. Applied Physics Letters, 2000, 77(5):651-653.
[47]	Kaspar S, Rattunde M, Schilling C, et al. Micro-cavity 2m GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader[J]. Applied Physics Letters, 2013, 103(4):041117.

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GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

doi: 10.3788/IRLA201847.1003004

作者简介:
尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

Research progress of GaSb based optically pumped semiconductor disk lasers (invited)

计量

GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

doi: 10.3788/IRLA201847.1003004

1. 中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083;

2. 中国科学院大学材料科学与光电技术学院,北京 100049

作者简介:
尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

English Abstract

Research progress of GaSb based optically pumped semiconductor disk lasers (invited)

1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;

2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

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目录

留言板

GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

doi: 10.3788/IRLA201847.1003004

作者简介: 尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

Research progress of GaSb based optically pumped semiconductor disk lasers (invited)

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GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

doi: 10.3788/IRLA201847.1003004

1. 中国科学院半导体研究所 半导体超晶格国家重点实验室,北京 100083; 2. 中国科学院大学 材料科学与光电技术学院,北京 100049

作者简介: 尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

English Abstract

Research progress of GaSb based optically pumped semiconductor disk lasers (invited)

1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; 2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

全文HTML

目录

作者简介:
尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

1. 中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083;

2. 中国科学院大学材料科学与光电技术学院,北京 100049

作者简介:
尚金铭(1993-),男,博士生,主要从事锑化物半导体激光器方面的研究。Email:shangjinming@semi.ac.cn

1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;

2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China