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The experimental device for measuring the transient temperature of millisecond pulsed laser damage monocrystalline silicon is shown in Fig.1. The millisecond pulse laser used in the experiment is Melar-100Nd:YAG, it has a wavelength of 1 064 nm, the millisecond pulse width is adjustable from 1.0 to 3.0 ms, and the step size is 0.5 ms. The spatial distribution of the laser intensity is near Gaussian, and the laser is single pulse output. The exit beam diameter is about 2.0 cm. The laser is incident perpendicularly through the focusing lens (f’=300 mm). On the surface of the monocrystalline silicon sample, the spot diameter is 2.0 mm. Adjust the spot size by controlling the target position through a five-dimensional translation stage. The target is a single-sided polished monocrystalline silicon block with a crystal plane orientation of (100) type. The target is clamped on a five-dimensional translation stage. The surface temperature of the monocrystalline silicon was directly measured by high-precision spot thermometer. The high-precision measuring instrument adopts the German KMGA740 high-speed thermometer, the response time is 10 µs, and the accuracy is 0.75% of the measured value. Temperature measurement range is 623−3 773 K.
Due to the small test temperature range of the high-precision spot thermometer (623−3 773 K), significant saturation phenomenon occurs when it was irradiated by large-energy-density laser. At the same time, the laser-induced plasma generated radiation and caused interference over the point thermometer. Therefore, the spectral inversion method was utilized to invert the temperature of the process when the monocrystalline silicon was irradiated by high-energy solid pulsed laser. The QE6500 spectrometer was used to collect the spectrum during the laser action, and the spectral data in a specific area of the surface of the monocrystalline silicon was obtained, thereby the temperature of the region was inverted.
In multi-spectral temperature inversion system, Spectrometer model is QE6500 of American Ocean Optics. The measurement range is 200−1 100 nm, the quantum efficiency is up to 90%, and the resolution limit is 0.14 nm. The focal length of the condenser lens is 6 cm. the data curve is smoothed and fitted by measuring the spectrum-strength curve within certain integral time on the part of the monocrystalline silicon surface which is irradiated by laser. It provides a quantitative basis for the thermal damage law and mechanism research of the monocrystalline silicon which is acted by laser.
The spectral radiation emittance of the Planck formula is expressed as follows:
$${M_{\lambda T}} = \frac{{{c_1}}}{{{\lambda ^5}}}\frac{1}{{{e^{{{{c_2}} / {\lambda T}}}} - 1}}$$ (1) Where
${M_{\lambda T}}$ is spectral radiation emittance of blackbody,$\lambda $ is wavelength, c = 2.997 924 58 × 108 m/s, h = 6.626 176 × 10–34 J·s, kB = 1.380 662 × 10–23 J·K–1, c1 = 2π hc2= 3.741 832 × 10–16 W·m2, c2 = hc/kB = 1.438 786 × 10–2 m·K, (T > 1 337.58 K, c2 = 1.438 8 × 10–2 m·K)During the experiment of the laser interact with target, the spectrum curve of the 400-820 nm band was acquired by the spectrometer through the fiber optic probe, and the spectrum was displayed on the computer by SpectraSuite Setup software. The average of the laser surface area of the target surface was obtained by the Planck formula inversion temperature.
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摘要: 为探究毫秒脉冲激光辐照单晶硅的热损伤规律和机理,利用高精度点温仪和光谱反演系统对毫秒脉冲激光辐照单晶硅的温度进行测量。分析温度演化过程,研究毫秒脉冲激光对单晶硅热损伤全过程的温度状态和对应的损伤结构形态。研究表明:脉冲宽度固定时,激光诱导的单晶硅的峰值温度随能量密度的增加而增加;当脉冲宽度在1.5~3.0 ms之间时,温度随脉冲宽度的增加而降减小。温度上升曲线在熔点(1 687 K)附近时出现拐点,反射系数由0.33增加为0.72。在气化和凝固阶段,出现气化和固化平台期。单晶硅热致解理损伤先于热致熔蚀损伤,在低能量密度激光作用条件下,应力损伤占主导地位,而在大能量密度条件下,热损伤效应占主导地位。损伤深度与能量密度成正比,随脉冲个数增加迅速增加。
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关键词:
- long pulse /
- laser /
- monocrystalline silicon /
- thermal damage /
- stress /
- ablation
Abstract: In order to investigate thermal damage law and mechanism of monocrystalline silicon irradiated by millisecond pulsed laser, the temperature of monocrystalline silicon irradiated by millisecond pulsed laser was measured by high precision point temperature meter and spectral inversion system. Then the temperature evolution process was analyzed. Also, the temperature state during the whole process of thermal damage of monocrystalline silicon irradiated by millisecond pulsed laser and the corresponding damage structure were studied. The results of this study show that the peak temperature of laser-induced monocrystalline silicon increases with the increase of energy density when the pulse width is fixed. When the pulse width was between 1.5−3.0 ms, the temperature decreased with the increase of pulse width. Temperature rise curve showed inflection point when it was close to the melting point (1 687 K), the reflection coefficient was from 0.33 to 0.72. During the gasification and solidification stages, it also shows the gasification and the solidification plateau periods. Thermal cleavage damage of monocrystalline silicon precedes thermal erosion damage. Stress damage dominates under low energy density laser irradiation, while thermal damage dominates under high energy density laser irradiation. The damage depth was proportional to the energy density and increases rapidly with the increase of the number of pulses.-
Key words:
- long pulse /
- laser /
- monocrystalline silicon /
- thermal damage /
- stress /
- ablation
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