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波长1064 nm、脉宽10 ns激光作用时,随着能量的增大,CMOS依次出现白色光斑损伤、线损伤、十字交叉线面损伤,如图4(a)~(c)所示。开始出现白色光斑损伤时,作用在CMOS上的激光能量为1.48 mJ,能量密度为294.6 mJ/cm2。当能量增大至1.91 mJ、能量密度为380.2 mJ/cm2时,出现十字交叉线面损伤,此时,屏左侧(全屏2/3以上面积)严重损伤。
图 4 CMOS在10 ns激光能量不断增加时的损伤效果图。(a)~(c) 波长1064 nm激光对CMOS损伤变化效果图;(d)~(f) 波长532 nm激光对CMOS损伤变化效果图
Figure 4. Damage effect picture of the CMOS under increasing 10 ns laser energy. (a)-(c) Damage effect of 1064 nm laser on CMOS; (d)-(f) Damage effect of 532 nm laser on CMOS
波长532 nm激光、脉宽10 ns激光作用时,随着能量的增大,CMOS依次出现绿色光斑损伤、线损伤、十字交叉线面损伤,如图4(d)~(f)所示。开始出现绿色光斑损伤时,作用在CMOS上的激光能量为0.32 mJ,能量密度为63.7 mJ/cm2。当能量增大至0.8 mJ、能量密度为159.7 mJ/cm2时,出现十字交叉线面损伤,此时屏左侧(全屏2/3以上面积)严重损伤。
由图4可知,随着激光能量增加,CMOS依次出现光斑损伤、线损伤、十字交叉线面损伤。通过CMOS失效机理分析[18,23]、结合损伤CCD仿真模拟[10-11],可知:CMOS出现光斑损伤主要是由于微透镜和滤光片受损,伴随着部分金属铝剥落融化,部分单元像素失效造成的;出现线损伤主要是由于局部电路短路或断路导致信号传输中断;随着CMOS温度继续升高,晶体硅融化,二氧化硅由于受到热应力作用发生变形和断裂,金属线路严重损坏,出现十字交叉线面损伤,CMOS大面积失效。
对比图4中两组损伤图像可以发现,波长532 nm激光造成的损伤状态中出现了绿色光斑损伤。由于532 nm激光辐射到彩色滤光片,致使滤光片发生光化学反应从而改变颜色,并造成滤光片受损区域无法成像[8]。
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波长1064 nm、脉宽0.4 ms激光辐照CMOS,当光阑后能量为70.4 mJ,能量密度达14 J/cm2时也无法对其完成有效损坏,此时已经达到激光器最大输出能量。故采用对探测器加装焦距8 mm成像镜头的方式开展实验,镜头前置直径1.78 mm的小孔光阑。在逐渐增加能量的过程中,未出现点损伤的情况,当能量为96 mJ,能量密度为3.84×103 mJ/cm2时,CMOS几乎完全损伤,如图5(a)所示。
图 5 带镜头的CMOS在1064 nm激光能量增加时的损伤效果图。(a) 0.4 ms激光对CMOS损伤效果图;(b)~(e) 10 ns激光对CMOS损伤效果图
Figure 5. Damage effect picture of the CMOS with lens under increasing 1064 nm laser energy. (a) Damage effect of 0.4 ms laser on CMOS; (b)-(e) Damage effect of 10 ns laser on CMOS
波长1064 nm、脉宽10 ns激光作用于镜头时,随着激光能量的增加,CMOS依次出现点损伤、线损伤、面损伤,CMOS损伤状态如图5(b)~(d)所示。图5(e)是通过显示器显示的对应于图5(d)的图像。CMOS开始出现点损伤时,光阑后激光能量为0.065 mJ;当激光能量增大到0.1 mJ时,CMOS出现致盲损伤,此时的能量密度为4 mJ/cm2。
实验得到脉宽0.4 ms和10 ns激光分别对CMOS实现致盲损伤时的能量,并结合光斑面积和脉宽,计算可得致盲时的峰值功率密度和能量密度如表1所示。由表可知,脉宽0.4 ms激光致盲CMOS的能量密度是脉宽10 ns激光的960倍,峰值功率密度是脉宽10 ns激光的1/42。这是因为ns激光的峰值功率密度更高,在短时间内使温度快速上升,造成CMOS致盲损伤。
表 1 不同脉宽的激光对带镜头的CMOS的损伤阈值
Table 1. Damage threshold of CMOS with lens by different pulse width laser
Pulse width Laser pulse power
density/W·cm−2Laser pulse energy
density/mJ·cm−20.4 ms 9.6×103 3.84×103 10 ns 4×105 4 对比波长1064 nm、脉宽10 ns激光对加装镜头前后CMOS的致盲损伤能量密度阈值分别为380.2 mJ/cm2和4 mJ/cm2,设镜头的光学增益是恒定的,脉宽0.4 ms激光对带镜头的CMOS的致盲损伤能量密度阈值为3.84×103 mJ/cm2,计算可得脉宽0.4 ms激光对不带镜头的CMOS的致盲损伤能量密度阈值为3.65×105 mJ/cm2。
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增大双波长复合激光输出能量,CMOS依次出现绿色光斑损伤、交叉线损伤、完全损伤,如图6(a)~(c)所示。探测器开始出现绿色光斑损伤时,光阑后复合激光能量为0.57 mJ,其中1064 nm激光能量为0.43 mJ,532 nm激光能量为0.14 mJ。复合激光能量增大至1 mJ时,出现交叉线和绿色光斑损伤。能量增大至1.19 mJ时完全损伤,其中1064 nm激光能量为0.64 mJ,532 nm激光能量为0.55 mJ,此时激光器通过倍频晶体之前的原始输出能量为35 mJ。
图 6 双波长复合激光对CMOS损伤图像。(a)绿色光斑损伤;(b)交叉线损伤;(c)完全损伤
Figure 6. Damage effect picture of double wavelength composite laser on CMOS. (a) Green spot damage; (b) Cross line damage; (c) Complete damage
波长1064 nm和532 nm的10 ns激光单独作用以及双波长复合激光作用于CMOS的致盲损伤数据如表2所示。对比可知:
表 2 双波长复合激光和单波长激光损伤阈值对比
Table 2. Comparison of damage threshold between double wavelength composite laser and single wavelength laser
Wavelength/nm Output laser energy/mJ Complete damage Laser energy/mJ Laser pulse power
density/W·cm-2Laser pulse energy
density/mJ·cm-21064 45 1.91 3.8×107 380.2 532 56 0.80 1.6×107 159.7 1064+532 35 1.19 2.4×107 236.9 (1)单波长激光完全损伤CMOS时,532 nm激光能量密度阈值是1064 nm激光的42%,且损伤效能高。这是因为相对于1064 nm激光,532 nm激光波长较短,光子能量较大,且吸收系数较大,吸收深度小,更容易造成CMOS的损伤[6]。
(2)双波长复合激光致盲损伤CMOS的能量密度阈值是单独1064 nm激光的62.3%,是单独532 nm激光的148%,但是对比损伤效果图可以发现,复合激光的损伤力度更强。1064 nm激光具有更强的穿透能力,可以实现更严重的热损伤和力学损伤,532 nm激光具有更大的光子能量,且处于CMOS的主响应波段内,具有更高响应能力[25]。双波长激光融合了1064 nm和532 nm激光的高能量、长吸收深度、高吸收系数等特性,具有更强的损伤效能,能够对像素单元及线路造成更严重的损伤。
(3)对比三种模式激光对CMOS造成致盲损伤时的基频光激光能量,双波长复合激光的基频光能量为35 mJ,是三种模式中最低的,反而单独532 nm激光的基频光能量为56 mJ,是三种模式中最高的。双波长复合激光致盲损伤CMOS的基频光能量是单独1064 nm的77.8%,是单独532 nm激光的62.5%。
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波长1064 nm、脉宽0.4 ms和10 ns的激光复合输出,保持光阑后脉宽0.4 ms激光能量31 mJ恒定不变,随着脉宽10 ns激光能量的增大,CMOS依次出现白点损伤、交叉线损伤、完全损伤现象,如图7(a)~(c)所示。当光阑后脉宽10 ns激光能量为1.03 mJ时,CMOS开始出现白点损伤,当激光能量上升到1.46 mJ时,CMOS致盲损伤。
图 7 双脉宽复合激光对CMOS损伤图像。(a)白点损伤;(b)交叉线损伤;(c)完全损伤
Figure 7. Damage effect picture of double pulse width composite laser on CMOS. (a) White spot damage; (b) Cross line damage; (c) Complete damage
波长1064 nm、脉宽0.4 ms和10 ns激光单独作用以及双脉宽复合激光作用于CMOS的损伤数据如表3所示。对比可知:
(1)脉宽10 ns激光的加入,使复合激光中脉宽0.4 ms激光的致盲损伤阈值降低为6.17×103 mJ/cm2,是单独作用时的1.7%。
(2)脉宽0.4 ms激光的加入,使复合激光中脉宽10 ns激光的致盲损伤阈值降低为290.6 mJ/cm2,是单独作用时的76.4%,且从损伤图像上可看出,CMOS的损伤面积加大,破坏力度更强。
表 3 双脉宽复合激光和单脉宽激光损伤阈值对比
Table 3. Comparison of damage threshold between double pulse width composite laser and single pulse width laser
Pulse width Spot damage Complete damage Laser energy/mJ Laser energy/mJ Laser pulse power density/W·cm−2 Laser pulse energy density/mJ·cm−2 10 ns 1.48 1.91 3.8×107 380.2 0.4 ms - - 9.1×105 3.65×105 10 ns+0.4 ms 1.03+31 1.46+31 2.9×107+1.5×104 (10 ns laser action time)
1.5×104 (other time)290.6+6.17×103 波长1064 nm、脉宽0.4 ms和10 ns激光复合作用过程分为三个阶段:第一阶段,在脉宽0.4 ms激光的作用下,CMOS表面温度升高,表面变软,屈服强度大大降低,同时吸收系数增大;第二阶段,在脉宽0.4 ms激光作用的中间时刻加入的脉宽10 ns激光具有高峰值功率特性,辐照后能够快速提高材料表面温度,产生热学和力学损伤,在第一阶段激光作用的基础上对CMOS造成初步局部损伤,同时产生的表面损伤会增加表面粗糙度,提高后续激光的吸收率;第三阶段,脉宽0.4 ms激光携带的大能量在前两个阶段造成的初步损伤和高吸收率基础上,迅速扩大和加深CMOS的损伤程度,造成致盲损伤。
Experimental study on a CMOS image sensor damaged by a composite laser
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摘要: 激光是对抗光电侦察的有效方式。为了提高损伤效能,探索了复合激光损伤光电探测器的新思路。分别开展了波长1064 nm和532 nm、脉宽10 ns的激光及其双波长复合激光,以及波长1064 nm、脉宽0.4 ms和10 ns激光及其双脉宽复合激光对CMOS图像传感器的损伤效能实验。结果表明,双波长复合激光对CMOS造成严重损伤时的基频光能量是单独1064 nm激光的77.8%,是单独532 nm激光的62.5%;双脉宽复合激光损伤时,脉宽0.4 ms激光的能量密度降低为单独作用时的1.7%,脉宽10 ns激光的能量密度降低为单独作用时的76.4%。这一发现为多制式复合激光高效光电对抗提供了新的思路和参考。Abstract: Lasers are an effective way to counter photoelectric reconnaissance. To improve the damage efficiency, a new idea of a composite laser damage photodetector is explored. Damage efficiency experiments of a 1064 nm and 532 nm laser with a 10 ns pulse widths and its dual wavelength composite laser, 1064 nm laser with 0.4 ms and 10 ns pulse width and its dual pulse width composite laser on a CMOS image sensor were carried out respectively. The results show that when the dual-wavelength composite laser causes complete damage to the CMOS, the fundamental frequency light energy is 77.8% of the 1064 nm laser alone and 62.5% of the 532 nm laser alone; when the dual-pulse composite laser damages, the pulse width of the 0.4 ms laser is The energy density is reduced to 1.7% of the single action, and the energy density of the 10 ns pulse width laser is reduced to 76.4% of the single action. This discovery provides a new idea and reference for high efficiency optoelectronic countermeasures of multisystem composite lasers.
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表 1 不同脉宽的激光对带镜头的CMOS的损伤阈值
Table 1. Damage threshold of CMOS with lens by different pulse width laser
Pulse width Laser pulse power
density/W·cm−2Laser pulse energy
density/mJ·cm−20.4 ms 9.6×103 3.84×103 10 ns 4×105 4 表 2 双波长复合激光和单波长激光损伤阈值对比
Table 2. Comparison of damage threshold between double wavelength composite laser and single wavelength laser
Wavelength/nm Output laser energy/mJ Complete damage Laser energy/mJ Laser pulse power
density/W·cm-2Laser pulse energy
density/mJ·cm-21064 45 1.91 3.8×107 380.2 532 56 0.80 1.6×107 159.7 1064+532 35 1.19 2.4×107 236.9 表 3 双脉宽复合激光和单脉宽激光损伤阈值对比
Table 3. Comparison of damage threshold between double pulse width composite laser and single pulse width laser
Pulse width Spot damage Complete damage Laser energy/mJ Laser energy/mJ Laser pulse power density/W·cm−2 Laser pulse energy density/mJ·cm−2 10 ns 1.48 1.91 3.8×107 380.2 0.4 ms - - 9.1×105 3.65×105 10 ns+0.4 ms 1.03+31 1.46+31 2.9×107+1.5×104 (10 ns laser action time)
1.5×104 (other time)290.6+6.17×103 -
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