Localized field enhanced graphene-based near-infrared photodetector (Invited)
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摘要: 近红外光电探测器在夜视监控、生物医学、环境监测等诸多领域有广泛应用。由于二维石墨烯材料具有独特性质(零带隙结构、高载流子迁移率、功函数可调)使其在红外探测领域具有巨大潜质。为了充分利用石墨烯的优势,并克服其吸收率低、暗电流噪声大的不足,研究者利用局域场调控设计混合结构以提高红外探测器性能。文中总结了局域场增强石墨烯近红外光电探测器的研究成果,介绍了单吸收层局域场增强器件并分析基于不同类型感光材料器件的优缺点,进一步介绍了双吸收层局域场增强器件,对笔者所做的双吸收层器件中电流极性等相关研究进行了简述。最后对局域场增强探测器相关功能拓展领域研究进行了简介,对该类器件的发展趋势进行了简要的总结和展望。Abstract: Near-infrared photodetectors are widely used in night vision, biomedical, environmental monitoring and many other fields. Two-dimensional graphene have great potential in infrared detection due to their unique properties (Zero band gap structure, high carrier mobility, adjustable work function). In order to take full advantage of graphene and overcome its disadvantages of low absorption and high noise, the researchers designed the hybrid structure using localized modulation of grating to improve the infrared detector performance. The research results of localized field enhanced graphene-based near-infrared photodetector were summarized, the localized field enhanced devices with single absorption layer was introduced, and the advantages and disadvantages of devices based on different types of photosensitive materials were analyzed. The double absorption layer local field enhanced device was further introduced, and the current polarity and other related researches of the research group in the field of double absorption layer devices was summarized. Finally, the research on the extension of the localized field enhanced detector was introduced, and the development trend of this kind of devices was briefly summarized and prospected.
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Key words:
- infrared photodetector /
- localized field /
- photogating effect /
- graphene
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图 1 单吸收层局域场增强石墨烯探测器典型结构。(a)石墨烯/PbS光电晶体管结构示意图[9]; (b)石墨烯/钙钛矿光电晶体管结构示意图[10]; (c)石墨烯/有机PDVF光电晶体管结构示意图[11]; (d)石墨烯/MoTe2光电晶体管结构示意图[12]
Figure 1. Typical structure of single absorption layer graphene detector based on localized filed enhancement. (a) Structural diagram of the graphene/PbS phototransistor; (b) Structural diagram of the graphene/perovskite phototransistor; (c) Structural diagram of the graphene/PDVF phototransistor; (d) Structural diagram of the graphene/MoTe2 phototransistor
图 2 表面等离子激元局域场增强石墨烯探测器典型结构。(a)石墨烯/金纳米颗粒光电探测器原理图[13];(b)石墨烯/硅量子点光电晶体管原理图[14]
Figure 2. Typical structure of graphene detector based on plasmon resonance filed enhancement. (a) Structural diagram of the graphene/gold nanoparticle photodetector[13]; (b) Structural diagram of the graphene/Si QDs phototransistor[14]
图 3 双吸收层局域场增强石墨烯探测器典型结构。(a)石墨烯/PTCDA/并五苯光电晶体管结构示意图[15];(b)石墨烯/PTAA/钙钛矿光电晶体管结构示意图[16];(c)石墨烯/C60/并五苯光电晶体管结构示意图[17];(d)不同波段响应特性[18]
Figure 3. Typical structures of graphene detectors enhanced by localized field with double absorption layers. (a) Structural diagram of the graphene/PTCDA/pentacene phototransistor[15]; (b) Structural diagram of the graphene/PTAA/perovskite phototransistor[16]; (c) Structural diagram of the graphene/C60/pentacene phototransistor[17]; (d) Response characteristics with different wavelengths[18]
图 5 石墨烯异质结全光调控光子突触。 (a) 光子突触器件异质结构图;(b) 由波长为980 nm和450 nm的光脉冲触发的器件的EPSC和IPSC[22]
Figure 5. Graphene heterojunction device with all-optically modulated photonic synapses function. (a) Device heterostructure diagram of the photonic synapse;(b) EPSC and IPSC of the device triggered by an optical pulse with wavelengths of 980 and 450 nm, respectively[22]
图 6 可见与近红外双向光调制。(a) 可见光在近红外光调制下光电流的变化情况(5 nm C60器件)[23];(b) 可见光在近红外光调制下的光电流变化情况(11.2 nm C60器件)[23];(c)近红外光在可见光调制下的响应速度变化情况(11.2 nm C60器件)[23]
Figure 6. Visible and near infrared bidirectional light modulation. (a) Variation of photocurrent of visible Light under Near-infrared Modulation (5 nm C60 device)[23]; (b) Variation of photocurrent of visible Light under Near-infrared Modulation (11.2 nm C60 device)[23]; (c) Change of response speed of Near-infrared Light under visible light modulation (11.2 nm C60 device)[23]
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[1] Chen Hongfu, Luo Man, Shen Niming, et al. Research progress of two-dimensional layered materials-based heterojunction photodetectors(Invited) [J]. Infrared and Laser Engineering, 2021, 50(1): 20211018. (in Chinese) doi: 10.3788/IRLA20211018 [2] Zhang Jinyue, Lv Junpeng, Ni Zhenhua. Highly sensitive infrared detector based on a two-dimensional heterojunction [J]. Chinese Optics, 2021, 14(1): 87-99. (in Chinese) doi: 10.37188/CO.2020-0139 [3] Yang Qi, Shen Jun, Wei Xingzhan, et al. Recent progress on the mechanism and device structure of graphene-based infrared detectors [J]. Infrared and Laser Engineering, 2020, 49(1): 0103003. (in Chinese) [4] Wang J, Han J, Chen X, et al. Design strategies for two‐dimensional material photodetectors to enhance device performance [J]. InfoMat, 2019, 1(1): 33-53. doi: 10.1002/inf2.12004 [5] Xu Hangyu, Wang Peng, Chen Xiaoshuang, et al. Research progress of two-dimensional semiconductor infrared photodetector(Invited) [J]. Infrared and Laser Engineering, 2021, 50(1): 20211017. (in Chinese) doi: 10.3788/IRLA20211017 [6] Wang J, Fang H, Wang X, et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared [J]. Small, 2017, 13(35): 1700894. doi: 10.1002/smll.201700894 [7] Ren Sheng, Liu Liwei, Li Jinhua, et al. Advances in the local field enhancement at nanoscale [J]. Chinese Optics, 2018, 11(01): 31-46. (in Chinese) doi: 10.3788/co.20181101.0031 [8] Han J, Wang J. Photodetectors based on two-dimensional materials and organic thin-film heterojunctions [J]. Chinese Physics B, 2019, 28(1): 17103. doi: 10.1088/1674-1056/28/1/017103 [9] Konstantatos G, Badioli M, Gaudreau L, et al. Hybrid graphene–quantum dot phototransistors with ultrahigh gain [J]. Nature Nanotechnology, 2012, 7(6): 363-368. doi: 10.1038/nnano.2012.60 [10] Lee Y, Kwon J, Hwang E, et al. High-performance perovskite-graphene hybrid photodetector [J]. Advanced Materials, 2015, 27(1): 41-46. doi: 10.1002/adma.201402271 [11] Yu M, Chen Y, Chen Y G, et al. Synergy between fermi level of graphene and morphology of polymer film allows broadband or wavelength‐sensitive photodetection [J]. Advanced Materials Interfaces, 2021, 8(19): 2100770. doi: 10.1002/admi.202100770 [12] Yu W, Li S, Zhang Y, et al. Near-infrared photodetectors based on MoTe2 /graphene heterostructure with high responsivity and flexibility [J]. Small, 2017, 13(24): 1700268. doi: 10.1002/smll.201700268 [13] Liu Y, Cheng R, Liao L, et al. Plasmon resonance enhanced multicolour photodetection by graphene [J]. Nature Communications, 2011, 2(1): 579. doi: 10.1038/ncomms1589 [14] Ni Z, Ma L, Du S, et al. Plasmonic silicon quantum dots enabled high-sensitivity ultrabroadband photodetection of graphene-based hybrid phototransistors [J]. ACS Nano, 2017, 11(10): 9854-9862. doi: 10.1021/acsnano.7b03569 [15] Chen X, Liu X, Wu B, et al. Improving the performance of graphene phototransistors using a heterostructure as the light-absorbing layer [J]. Nano Letters, 2017, 17(10): 6391-6396. doi: 10.1021/acs.nanolett.7b03263 [16] Zhou G, Sun R, Xiao Y, et al. A high‐performance flexible broadband photodetector based on graphene–PTAA–perovskite Heterojunctions [J]. Advanced Electronic Materials, 2021, 7(3): 2000522. doi: 10.1002/aelm.202000522 [17] Han J, Wang J, Yang M, et al. Graphene/organic semiconductor heterojunction phototransistors with broadband and bi-directional photoresponse [J]. Advanced Materials, 2018, 30(49): 1804020. doi: 10.1002/adma.201804020 [18] He M, Han J, Han X, et al. Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor [J]. Carbon, 2021, 178: 506-514. doi: 10.1016/j.carbon.2021.03.024 [19] Han J, Han X, Zhang C, et al. Deciphering the photocurrent polarity of Bi2 O2 Se heterojunction phototransistors to enhance detection performance [J]. Journal of Materials Chemistry C, 2021, 9: 7910-7918. doi: 10.1039/D1TC02038B [20] Han J, Zhang C, Peng S, et al. Type-III organic/two-dimensional multi-layered phototransistors with promoted operation speed at the communication band [J]. Journal of Materials Chemistry C, 2021, 9(39): 13963-13971. doi: 10.1039/D1TC03657B [21] He Z, Han J, Du X, et al. Photomemory and pulse monitoring featured solution‐processed near‐infrared graphene/organic phototransistor with detectivity of 2.4×1013 Jones [J]. Advanced Functional Materials, 2021, 31(37): 2103988. doi: 10.1002/adfm.202103988 [22] Hou Y, Li Y, Zhang Z, et al. Large-scale and flexible optical synapses for neuromorphic computing and integrated visible information sensing memory processing [J]. ACS Nano, 2021, 15(1): 1497-1508. doi: 10.1021/acsnano.0c08921 [23] Han J, He M, Yang M, et al. Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents [J]. Light: Science & Applications, 2020, 9(1): 167. doi: https://doi.org/10.1038/s41377-020-00406-4