Recent advances in semiconductor nanowires infrared photodetectors (Invited)
-
摘要: 近年来,红外探测器由于其在军民领域广阔的应用前景已经受到了越来越多的关注。为了进一步实现室温宽谱段、高灵敏度、快速响应以及低功耗的红外探测器,低维半导体作为极具潜力的新型沟道材料得到了广泛的研究。其中,纳米线有着独特的电学与光电特性,当被应用到红外光电探测器中时,展现出了巨大的优势,例如尺寸小、功耗低、光吸收效率高、表面态丰富、易于光电子分离与收集以及与传统硅基工艺兼容等等。当前,对于纳米线红外探测器的研究一直在进行中并不断取得突破。文中主要概述了纳米线在红外光电探测领域的最新研究进展,介绍了半导体纳米线的基本特性、材料选择和制备方法,展示了多种二元与三元化合物半导体中已实现红外探测的纳米线材料及其当前研究达到的探测水平,并且分类总结了多种进一步提高光电探测性能的方法,包括异质结合、外场调控、器件集成等,随后针对不同构型纳米线红外探测器的优缺点,进行了简要的对比与说明,最后基于该领域仍然面临的挑战对其未来的发展方向进行了展望,并为其技术发展路线提出了初步的建议。Abstract: In recent years, infrared photodetectors have attracted increasing interest due to their promising applications in both military and civil areas. To further realize room-temperature, wide-spectrum, high-sensitivity, fast-response and low-power consumption infrared photodetectors, low-dimension semiconductors are considered as potential channel materials and have been studied widely. Among them, nanowires have special electrical and photoelectrical characteristics, showing enormous advantages in the applications of infrared photodetectors such as small size, low power consumption, high light absorption efficiency, abundant surface states, outstanding ability to separate and collect photoelectrons, good compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology and so on. At present, nanowires infrared photodetectors are going through continuous progress and breakthrough. In this review, recent advances in semiconductor nanowires infrared photodetectors were outlined in details. At the beginning, the basic characteristics, material choice and preparation methods of nanowires were introduced. Subsequently, many nanowires including binary and ternary compound semiconductors for the use of infrared detection were presented and their current detectable levels were illustrated precisely. Many methods of further improving their detecting performances were also classified and summarized, including constructing heterostructures, applying external field and integrating with other functional devices. On the basis of the above-mentioned advances, a comparison of advantages and disadvantages among different nanowires infrared detectors was given. In the end, the future development trend was indicated based on the challenges in this area and preliminary suggestions for the technical development route were presented.
-
Key words:
- infrared photodetectors /
- nanowires /
- controllable growth /
- heterostructures /
- external field control
-
图 2 (a) CVD装置示意图[15];(b) 纳米线VLS和VSS生长机理示意图[34];(c) 传统纳米线生长与表面活性剂辅助纳米线生长机理示意图[17]
Figure 2. (a) Schematic representation of the CVD setup[15]; (b) Schematic illustration of the VLS and VSS growth mechanism[34]; (c) Schematic illustration of the conventional and the surfactant-assisted nanowire (NW) growth mode[17]
图 3 (a),(b) SnSe与SnS纳米线830 nm光探测器光响应时间[24];(c),(d) Sn催化生长的GaSb纳米线阵列1550 nm光探测器的光响应时间以及光电流与响应度随入射光功率变化关系[18]
Figure 3. (a),(b) Response time for 830 nm IR detectors based on SnSe and SnS NW[24]; (c),(d) Photocurrent response time as well as the photocurrent and responsivity versus illumination power of parallel array Sn-catalyzed GaSb NWs for a 1550 nm IR photodetector[18]
图 5 (a) PbSe-CsPbBr3纳米线光探测器随脉冲光变化的光电流[44];(b) GaAs/AlGaAs/GaAs纳米线沟道SEM图以及能带机理图[45];(c) InP-InAs二极管阵列光响应度与外量子效率随入射光波长的变化关系[23];(d) GaAs1−xSbx/InAs核-壳纳米线光探测器响应度随入射光波长变化关系[47];(e)肖特基-欧姆接触的InAs纳米线光探测器光照前后Ids-Vds曲线变化[22];(f) Au纳米颗粒-InAs异质结纳米线与InAs纳米线FET转移特性曲线对比[22]
Figure 5. (a) Time-dependent response of the photodetectors based on PbSe-CsPbBr3 heterostructure NWs[44]; (b) SEM image and the corresponding energy band alignment diagram of the single GaAs/AlGaAs/GaAs NW photodetector[45]; (c) Wavelength-dependent responsibility and EQE of InP-InAs photodiode arrays[23]; (d) Wavelength-dependent responsibility of the GaAs1−xSbx /InAs core−shell NW device[47]; (e) Ids-Vds curves before and after illumination of the Schottky-Ohmic contacted InAs NW photodetectors[22]; (f) Ids-Vgs curves of InAs nanowires with and without Au particles[22]
图 6 (a),(b)可见光辅助InAs纳米线探测器原理及其在不同波长红外光下的Ids-Vds曲线[9];(c)~(f) InAs纳米线场效应晶体管在铁电聚合物剩余极化态向上和向下时的Ids-Vds曲线及其结构与原理示意图、以及在3.5 μm光照下的光电流与响应度随入射光功率变化关系,4.3 μm光照下光电流随脉冲光变化关系[54];(g),(h) 表面态调控的InAs纳米线探测器光电导增益与响应度随Vbg变化关系及其原理示意图[55]
Figure 6. (a),(b) Energy band alignment diagram and Ids-Vds curve under IR light with different wavelengths of visible light-assisted InAs NW photodetectors[9]; (c)-(f) Schematic diagram and Ids-Vds curves of the InAs NW FETs with polarized upward state and polarized downward state of P(VDF-TrFE) film, their photocurrent and responsivity versus illumination power under 3.5 μm illumination and the time-dependent response under 4.3 μm illumination[54]; (g),(h) Logarithmic gain−Vbg characteristics and responsivity−Vbg characteristics as well as its mechanism diagram of surface-states-modulated InAs NW phototransistor[55]
图 7 (a)红外探测放大系统结构示意图;(b)光照前后器件电路示意图;(c)红外探测放大器件与单根Bi2Se2S纳米线探测器光敏性随入射光波长变化对比[56]
Figure 7. (a) Schematic diagram of IRDA amplifing system; (b) Circuit schematic illustrations of switching mechanism analysis before and after illumination; (c) Comparison of photosensitivity for an IRDA system and single Bi2Se2S NW IRPD under different wavelengths[56]
-
[1] 范晋祥, 杨建宇. 红外成像探测技术发展趋势分析[J]. 红外与激光工程, 2012, 41(12): 3145-3153. doi: 10.3969/j.issn.1007-2276.2012.12.003 Fan Jinxiang, Yang Jianyu. Development trends of infrared imaging detecting technology [J]. Infrared and Laser Engineering, 2012, 41(12): 3145-3153. (in Chinese) doi: 10.3969/j.issn.1007-2276.2012.12.003 [2] Rogalski A. HgCdTe infrared detector material: History, status and outlook [J]. Reports on Progress in Physics, 2005, 68(10): 2267-2336. [3] Grein C H, Young P M, Flatte M E, et al. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes [J]. Journal of Applied Physics, 1995, 78(12): 7143-7152. [4] Levine B F. Quantum-well infrared photodetectors [J]. Journal of Applied Physics, 1993, 74(8): R1-R81. [5] Shen L, Pun E Y B, Ho J C. Recent developments in III-V semiconducting nanowires for high-performance photodetectors [J]. Materials Chemistry Frontiers, 2017, 1(4): 630-645. [6] Li Z, Allen J, Allen M, et al. Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors [J]. Materials, 2020, 13(6): 1400. [7] 黄庆红. 国际半导体技术发展路线图(ITRS)2013版综述[J]. 中国集成电路, 2014, 23(9): 25-45. doi: 10.3969/j.issn.1681-5289.2014.09.002 Huang Q. International technology roadmap for semiconductors (ITRS) (2013 edition) [J]. China Integrated Circult, 2014, 23(9): 25-45. (in Chinese) doi: 10.3969/j.issn.1681-5289.2014.09.002 [8] Xia Y N, Yang P D, Sun Y G, et al. One-dimensional nanostructures: Synthesis, characterization, and applications [J]. Advanced Materials, 2003, 15(5): 353-389. [9] Fang H, Hu W, Wang P, et al. Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire [J]. Nano Letters, 2016, 16(10): 6416-6424. [10] Zhuge F, Zheng Z, Luo P, et al. Nanostructured materials and architectures for advanced infrared photodetection [J]. Advanced Materials Technologies, 2017, 2(8): 1700005. [11] Liang F X, Wang J Z, Li Z P, et al. Near-infrared-light photodetectors based on one-dimensional inorganic semiconductor nanostructures [J]. Advanced Optical Materials, 2017, 5(14): 1700081. [12] Luo L B, Zeng L H, Xie C, et al. Light trapping and surface plasmon enhanced high-performance NIR photodetector [J]. Scientific Reports, 2014, 4: 3914. [13] Yang Y, Wang X, Wang C, et al. Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector [J]. Nano Letters, 2020, 20(5): 3872-3879. [14] Wu Y, Yan X, Zhang X, et al. A monolayer graphene/GaAs nanowire array schottky junction self-powered photodetector [J]. Applied Physics Letters, 2016, 109(18): 183101. [15] Yang Z X, Wang F, Han N, et al. Crystalline GaSb nanowires synthesized on amorphous substrates: From the formation mechanism to p-channel transistor applications [J]. ACS Applied Materials & Interfaces, 2013, 5(21): 10946-10952. [16] Yang Z X, Liu L Z, Yip S P, et al. Complementary metal oxide semiconductor-compatible, high-mobility, < 111 > -oriented GaSb nanowires enabled by vapor-solid-solid chemical vapor deposition [J]. ACS Nano, 2017, 11(4): 4237-4246. [17] Yang Z X, Han N, Fang M, et al. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires [J]. Nature Communications, 2014, 5: 5249. [18] Sun J, Peng M, Zhang Y, et al. Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors [J]. Nano Letters, 2019, 19(9): 5920-5929. [19] Kuo C H, Wu J M, Lin S J, et al. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire [J]. Nanoscale Research Letters, 2013, 8: 327. [20] Sun J, Yin Y, Han M, et al. Nonpolar-oriented wurtzite InP nanowires with electron mobility approaching the theoretical limit [J]. ACS Nano, 2018, 12(10): 10410-10418. [21] Guo N, Hu W, Liao L, et al. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature [J]. Advanced Materials, 2014, 26(48): 8203-8209. [22] Miao J, Hu W, Guo N, et al. Single InAs nanowire room-temperature near-infrared photodetectors [J]. ACS Nano, 2014, 8(4): 3628-3635. [23] Ren D, Meng X, Rong Z, et al. Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions [J]. Nano Letters, 2018, 18(12): 7901-7908. [24] Zheng D, Fang H, Long M, et al. High-performance near-infrared photodetectors based on p-type SnX (X = S, Se) nanowires grown via chemical vapor deposition [J]. ACS Nano, 2018, 12(7): 7239-7245. [25] Zheng D, Wang J, Hu W, et al. When nanowires meet ultrahigh ferroelectric field-high-performance full-depleted nanowire photodetectors [J]. Nano Letters, 2016, 16(4): 2548-2555. [26] Casadei A, Alarcon Llado E, Amaduzzi F, et al. Polarization response of nanowires a la carte [J]. Scientific Reports, 2015, 5: 7651. [27] Zhai T, Fang X, Liao M, et al. A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors [J]. Sensors, 2009, 9(8): 6504-6529. [28] Soci C, Zhang A, Bao X Y, et al. Nanowire photodetectors [J]. Journal of Nanoscience and Nanotechnology, 2010, 10(3): 1430-1449. [29] Hu J T, Odom T W, Lieber C M. Chemistry and physics in one dimension: Synthesis and properties of nanowires and nanotubes [J]. Accounts of Chemical Research, 1999, 32(5): 435-445. [30] Rogalski A, Martyniuk P, Kopytko M. InAs/GaSb type-II superlattice infrared detectors: Future prospect [J]. Applied Physics Reviews, 2017, 4(3): 031304. [31] Sun J, Han M, Gu Y, et al. Recent advances in group III-V nanowire infrared detectors [J]. Advanced Optical Materials, 2018, 6(18): 1800256. [32] Gao Z, Sun J, Han M, et al. Recent advances in Sb-based III-V nanowires [J]. Nanotechnology, 2019, 30(21): 212002. [33] Peng K, Lu A, Zhang R, et al. Motility of metal nanoparticles in silicon and induced anisotropic silicon etching [J]. Advanced Functional Materials, 2008, 18(19): 3026-3035. [34] Lensch-Falk J L, Hemesath E R, Perea D E, et al. Alternative catalysts for VSS growth of silicon and germanium nanowires [J]. Journal of Materials Chemistry, 2009, 19(7): 849-857. [35] Morkoetter S, Funk S, Liang M, et al. Role of microstructure on optical properties in high-uniformity In1-xGaxAs nanowire arrays: Evidence of a wider wurtzite band gap [J]. Physical Review B, 2013, 87(20): 205303. [36] Wang J F, Gudiksen M S, Duan X F, et al. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires [J]. Science, 2001, 293(5534): 1455-1457. [37] Nainani A, Bennett B R, Boos J B, et al. Enhancing hole mobility in III-V semiconductors [J]. Journal of Applied Physics, 2012, 111(10): 103706. [38] Ren P, Hu W, Zhang Q, et al. Band-selective infrared photodetectors with complete-composition-range InAsxP1-x alloy nanowires [J]. Advanced Materials, 2014, 26(44): 7444-7449. [39] Ren D, Azizur-Rahman K M, Rong Z, et al. Room-temperature midwavelength infrared InAsSb nanowire photodetector arrays with Al2O3 passivation [J]. Nano Letters, 2019, 19(5): 2793-2802. [40] Li Z, Yuan X, Gao Q, et al. In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse [J]. Nanotechnology, 2020, 31(24): 244002. [41] Zhou C, Zhang X T, Zheng K, et al. Self-assembly growth of In-rich InGaAs core-shell structured nanowires with remarkable near-infrared photoresponsivity [J]. Nano Letters, 2017, 17(12): 7824-7830. [42] Li D, Lan C, Manikandan A, et al. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires [J]. Nature Communications, 2019, 10: 1664. [43] Guo P, Hu W, Zhang Q, et al. Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors [J]. Advanced Materials, 2014, 26(18): 2844-2849. [44] Fan C, Xu X, Yang K, et al. Controllable epitaxial growth of core-shell PbSe@CsPbBr3 wire heterostructures [J]. Advanced Materials, 2018, 30(45): 1804707. [45] Zhu X, Lin F, Zhang Z, et al. Enhancing performance of a GaAs/AlGaAs/GaAs nanowire photodetector based on the two-dimensional electron-hole tube structure [J]. Nano Letters, 2020, 20(4): 2654-2659. [46] Ma L, Hu W, Zhang Q, et al. Room-temperature near-infrared photodetectors based on single heterojunction nanowires [J]. Nano Letters, 2014, 14(2): 694-698. [47] Ni Z, Wang H, Zhao Q, et al. Ambipolar conjugated polymers with ultrahigh balanced hole and electron mobility for printed organic complementary logic via a two-step c-h activation strategy [J]. Advanced Materials, 2019, 31(10): 1806010. [48] Fang H, Hu W. Photogating in low dimensional photodetectors [J]. Advanced Science, 2017, 4(12): 1700323. [49] Han Y, Fu M, Tang Z, et al. Switching from negative to positive photoconductivity toward intrinsic photoelectric response in InAs nanowire [J]. ACS Applied Materials & Interfaces, 2017, 9(3): 2867-2874. [50] Alexander-Webber J A, Groschner C K, Sagade A A, et al. Engineering the photoresponse of InAs nanowires [J]. ACS Applied Materials & Interfaces, 2017, 9(50): 43993-44000. [51] Li J, Yan X, Sun F, et al. Anomalous photoconductive behavior of a single InAs nanowire photodetector [J]. Applied Physics Letters, 2015, 107(26): 263103. [52] Zhang X, Li Z, Yao X, et al. Light-induced positive and negative photoconductances of InAs nanowires toward rewritable nonvolatile memory [J]. ACS Applied Electronic Materials, 2019, 1(9): 1825-1831. [53] Yang Y, Peng X, Kim H S, et al. Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory [J]. Nano Letters, 2015, 15(9): 5875-5882. [54] Zhang X, Huang H, Yao X, et al. Ultrasensitive mid-wavelength infrared photodetection based on a single InAs nanowire [J]. ACS Nano, 2019, 13(3): 3492-3499. [55] Zhang X, Yao X, Li Z, et al. Surface-states-modulated high-performance InAs nanowire phototransistor [J]. Journal of Physical Chemistry Letters, 2020, 11(15): 6413-6419. [56] Ran W, Wang L, Zhao S, et al. An integrated flexible all-nanowire infrared sensing system with record photosensitivity [J]. Advanced Materials, 2020, 32(16): 1908419. [57] 吕衍秋, 鲁星, 鲁正雄, 等. 锑化物红外探测器国内外发展综述[J]. 航空兵器, 2020, 27(5): 1-12. Lv Yanqiu, Lu Xing, Lu Zhengxiong, et al. Review of antimonide infrared detector development at home and abroad [J]. Aero Weaponry, 2020, 27(5): 1-12. (in Chinese) [58] Spies M, Monroy E. Nanowire photodetectors based on wurtzite semiconductor heterostructures [J]. Semiconductor Science and Technology, 2019, 34(5): 053002.