Research progress on ferroelectric localized field-enhanced low-dimensional material-based photodetectors (invited)
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摘要: 光电探测器在通讯、环境、健康和国防等日常生活及国家安全等领域中应用广泛。随着时代的发展,对光电探测器在灵敏度、响应速度及波长范围等方面的性能要求与日俱增。低维材料独特的电学及光电特性使其在光电子器件领域具有重要的应用前景。为了充分利用低维材料的优势,克服其暗电流大、吸收率低的不足,研究人员提出将铁电材料与低维材料结合,利用铁电材料的剩余极化作用形成强局域场调控载流子浓度以提高低维材料的光电探测能力。文中总结了近年来铁电局域场增强低维材料光电探测器的研究成果,介绍了铁电材料对一维纳米线、二维材料以及低维结型器件的调控和性能提升方面的相关研究。最后,对铁电局域场增强低维材料光电探测器的发展趋势进行了简要的总结和展望。Abstract: Photodetectors are widely used in daily life and national security, including communication, the environment, health and national defense. With the development of time, the performance requirements of photodetectors in terms of sensitivity, response speed and wavelength range have been increasing. The unique electrical and optoelectronic properties of low-dimensional materials make them an essential application prospect in the field of optoelectronic devices. To make full use of the advantages of low-dimensional materials and overcome the shortcomings of high dark current and low absorption rate, researchers have combined ferroelectric materials with low-dimensional materials and used the remnant polarization of ferroelectric materials to form a strong localized field to modulate carriers, which improves the photodetection capability of low-dimensional materials. Recent research results of ferroelectric localized field-enhanced low-dimensional material-based photodetectors are summarized in this paper. Meanwhile, related research on the modulation and performance enhancement of ferroelectric materials in one-dimensional nanowires, two-dimensional materials and junction devices was introduced. Finally, the development trend of ferroelectric localized field-enhanced low-dimensional material-based photodetectors was briefly summarized and proposed.
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Key words:
- ferroelectric localized field /
- low-dimensional materials /
- photodetector
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图 1 铁电局域场增强纳米线光电探测器。(a)铁电材料调控单根InP纳米线侧栅器件结构示意图;(b)器件在负向极化状态的工作原理图[15];(c)铁电材料调控单根InAs纳米线顶栅器件结构示意图;(d)器件在不同功率密度的3.5 μm激光照射下的输出特性曲线[18]
Figure 1. Ferroelectric localized field-enhanced nanowire photodetectors. (a) Device structure schematic of ferroelectric side-gated single InP NW; (b) Working principle diagram of the device in the negative polarization state[15]; (c) Device structure schematic of ferroelectric top-gated single InAs NW; (d) Output characteristic curves of the device for 3.5 μm exciting light at different power densities[18]
图 2 铁电局域场增强MoS2光电探测器。(a)铁电材料调控MoS2顶栅器件结构示意图;(b)不同光波长下的响应率[14];(c)铁电材料调控MoS2负电容场效应晶体管结构及测试电路示意图;(d)不同入射光功率下的转移特性曲线[23]
Figure 2. Ferroelectric localized field-enhanced MoS2 photodetector. (a) Schematic diagram of MoS2 top-gate device structure tuned by ferroelectric material; (b) Photoresponsivity under different wavelength[14]; (c) Schematic diagram of structure and test circuit of MoS2 negative capacitance field effect transistor tuned by ferroelectric material; (d) Transfer characteristic curves under different incident light powers[23]
图 3 铁电局域场增强二维材料光电探测器。(a)铁电材料调控InSe光电晶体管结构示意图[26];(b) 铁电材料调控InSb光电晶体管结构示意图[28]
Figure 3. Ferroelectric localized field-enhanced two-dimensional material photodetectors. (a) Structure schematic of ferroelectric material tuned InSe phototransistor[26]; (b) Structure schematic of ferroelectric material tuned InSb phototransistor[28]
图 4 铁电材料热释电效应调控二维材料光电探测器。(a)石墨烯热释电辐射热计示意图;(b)石墨烯热释电辐射热计工作原理图[29];(c) P(VDF-TrFE)/MoS2场效应晶体管结构[30];(d) Bi2O2Se/PMN-PT铁电场效应晶体管结构示意图[31]
Figure 4. Modulation of two-dimensional material photodetectors by pyroelectric effect of ferroelectric materials. (a) Schematic diagram of graphene pyroelectric bolometer; (b) Working principle diagram of graphene pyroelectric bolometer[29]; (c) P(VDF-TrFE)/MoS2 field effect transistor structure[30]; (d) Structure schematic of Bi2O2Se/PMN-PT ferroelectric field effect transistor[31]
图 5 铁电局域场增强二维材料同质结器件。(a) BiFeO3调控的WSe2面内pn结示意图;(b)器件的输出特性[32];(c) P(VDF-TrFE)调控的MoTe2面内pn结示意图;(d)器件的光电流mapping图[33]
Figure 5. Ferroelectric localized field-enhanced two-dimensional material homojunction devices. (a) Schematic diagram of BiFeO3 ferroelectric tuned WSe2 in-plane pn junction; (b) Output characteristics of the device[32]; (c) Schematic diagram of P(VDF-TrFE) ferroelectric tuned MoTe2 in-plane pn junction; (d) Photocurrent mapping of the device[33]
图 6 铁电局域场增强二维范德华异质结器件[35]。(a) 铁电调控异质结GeSe/MoS2器件结构示意图;(b)~(d) 铁电材料处于不同极化状态时异质结的能带结构示意图
Figure 6. Ferroelectric localized field-enhanced two-dimensional van der Waals heterojunction devices[35]. (a) Device structure schematic of ferroelectric tuned GeSe/MoS2 heterojunction; (b)-(d) Schematic diagram of the energy band structure of the heterojunction corresponding to the different ferroelectric polarization states
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