[1] |
|
[2] |
Liu Z, Machuca F, Pianetta P, et al. Electron scattering study within the depletion region of GaN (0001) and the GaAs(100) surface[J]. Appl Phys Lett, 2004, 85: 1541-1543. |
[3] |
|
[4] |
Bender E J, Estrera J P, Ford C E, et al. High reliability GaAs image intensifier with unfilmed microchannel plate[C]// SPIE, 1999, 3749: 713-714. |
[5] |
|
[6] |
Sinor T W, Estrea J P, Phillips D L, et al. Extended blue GaAs image intensifiers[C]//SPIE, 1995, 2551: 130-134. |
[7] |
|
[8] |
Drouhin H-J, Hermann C, Lampel G. Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves [J]. Phys Rev B, 1985, 31: 3859-3871. |
[9] |
|
[10] |
Elamrawi K A, Hafez M A, Elsayed-Ali H E. Atomic hydrogen-cleaned GaAs (100) negative electron affinity photocathode: Surface studies with reflection high-energy electron diffraction and quantum efficiency [J]. Vac Sci Technol A, 2000, 18: 951-955. |
[11] |
|
[12] |
Shi Feng. Research on thermal cleaning technique for GaAs photocathode [J]. Applied Optics, 2004, 25 (4): 31-32, 40. (in Chinese) |
[13] |
Zhang Liandong, Feng Liu, Liu Hui, et al. Characteristic of surface barrier of equally-doped GaAs photocathode[J]. Infrared and Laser Engineering, 2013, 42(8): 2181-2185. (in Chinese) |