[1] |
Shi Yanli, Guo Qian, Li Long, et al. Visible-extended InP/InGaAs wide spectrum response infrared detectors[J]. Infrared and Laser Engineering, 2015, 44(11): 3177-3180. (in Chinese) |
[2] |
MacDougal M, Geske J, Wang C, et al. Low dark current InGaAs detector arrays for night vision and astronomy[C]//SPIE, 2009, 7298(3F): 1-10. |
[3] |
Klem J F, Kim J K, Cich M J, et al. Mesa-isolated InGaAs photodetectors with low dark current[J]. Applied Physics Letters, 2009, 95: 0311121-0311123. |
[4] |
Jae-Hyung Jang, Student Member, Gabriel Cueva, et al. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction P-i-I-N photodiodes[J]. Journal of Lightwave Technology, 2002, 20(3): 507-514. |
[5] |
Li Ping, Li Tao, Deng Shangyan, et al. Anneal treatment to improve the performance of extended wavelength In0.83Ga0.17As photodetectors[J]. Infrared Phys Technol, 2015, 71: 140-143. |
[6] |
Cheng Jifeng, Zhu Yaoming, Tang Hengjing, et al. Microcosmic damage mechanism of inductively couple plasma etching for InGaAs[J]. Infrared and Laser Engineering, 2013, 42(8): 2186-2189. (in Chinese) |
[7] |
Anne Rouvie, Jean-Luc Reverchon, Odile Huet, et al. InGaAs focal plane arrays developments at III-V lab[C]//SPIE, 2012, 8353(8): 1-12. |
[8] |
Li Y F, Tang H J, Li T, et al. Current-voltage characteristics of planar-type InGaAs infrared detectors[J]. Journal of OptoelectronicsLaser, 2009, 20(12): 1580-1583. |
[9] |
Zhou Yi, Chen Jianxin, Xu Qingqing, et al. Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector[C]//SPIE, 2012, 8419(4): 1-7. |