[1] Kwon O H, Hayat M M, Campbell J C, et al. Effect of stochastic dead space on noise in avalanche photodiodes[J]. IEEE Trans Electron Devices, 2004, 51(5): 693-700.
[2] Yuan P, Wang S, Sun X, et al. Avalanche photodiodes with an impact-ionization-engineered multiplication region[J]. IEEE Photon Technol Lett, 2000, 12(10): 1370-1372.
[3] Wang S, Hurst J B, Ma F, et al. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates[J]. IEEE Photon Technol Lett, 2002, 14(12): 1722-1724.
[4] George M W, Madison Compton, David A R, et al. Multi-gain-stage InGaAs avalanche photodiode with enhanced gain and reduced excess noise[J]. IEEE Journal of the Electron Device Society, 2013, 1(2): 54-65.
[5] Jaroslaw Jurenczyk, Dariusz Zak, Janusz Kaniewski, et al. Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes[J]. Optical Applicata, 2013, 43(1): 39-46.
[6] Tsang W T. Semiconductor Photodetector[M]. Beijing: Electronic Industry Press, Tsinghua University Press, 1992: 1-332.
[7] McIntyre R J. Multiplication noise in uniform avalanche photodiodes[J]. IEEE Trans Electron Devices, 1996, 13(1): 164-168.
[8] Majeed M Hayat, Oh-Hyun Kwon, Shuling Wang, et al. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment[J]. IEEE Trans Electron Devices, 2002, 49(12): 2114-2123.
[9] Majeed M Hayat, Bahaa E A Saleh, Malvin C Teich. Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes[J]. IEEE Trans Electron Devices, 1992, 39(3): 546-552.
[10] George M Williams, David A Ramirez, Majeed M Hayat, et al. Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions[J]. Journal of Applied Physics, 2013, 113(9): 093705-1-093705-11.