Volume 45 Issue 1
Feb.  2016
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Zhao Guofen, Zhao Yiqiang, Zhao Gongyuan, Zhang Zhiheng, Guo Zhaomin. Design of front-end circuit for uncooled diode infrared detector[J]. Infrared and Laser Engineering, 2016, 45(1): 104001-0104001(6). doi: 10.3788/IRLA201645.0104001
Citation: Zhao Guofen, Zhao Yiqiang, Zhao Gongyuan, Zhang Zhiheng, Guo Zhaomin. Design of front-end circuit for uncooled diode infrared detector[J]. Infrared and Laser Engineering, 2016, 45(1): 104001-0104001(6). doi: 10.3788/IRLA201645.0104001

Design of front-end circuit for uncooled diode infrared detector

doi: 10.3788/IRLA201645.0104001
  • Received Date: 2015-05-05
  • Rev Recd Date: 2015-06-03
  • Publish Date: 2016-01-25
  • A front-end circuit for uncooled diode infrared detector, composed of Gm-C-OP integrated amplifier, was designed. The small input voltage steered from diode detector was transferred into current by an operational transconductance amplifier(OTA), and then the current was converted to voltage by a capacitor transimpedance amplifier(CTIA). The OTA used a current feedback loop to achieve higher linearity and transconductance than the traditional one. By adopting differential input structure, Gm-C-OP integrated amplifier can eliminate the effect of ambient temperature and process on the output signal of detectors. The circuit was fabricated in a 0.35 m CMOS process under 5 V supply voltage. The Gm-C-OP integrated amplifier occupies an area of 0.012 6 mm2. The input differential voltage varied from 0 to 5 mV. Testing results show that the transconductance of OTA is in accordance with the simulation results. The Gm-C-OP integrated amplifier can convert the dynamic small input voltage into a proper voltage linearly and the linearity is 97%. The output range exceeds 2 V.
  • [1] Meng Xiangyun, Zhang Yacong, Liu Sanlin, et al. Low power readout circuit for 384288 uncooled IRFPA with novel readout stage [C]//2012 IEEE International Conference on Electron Devices and Solid State Circuit, Bangkok, 2012: 1-3.
    [2] Liu Chienchang, Carlos H Mastrangelo. A CMOS uncooled heat-balancing infrared imager[J]. IEEE Journal of Solid-State Circuits, 2000, 35(4): 527-535.
    [3] Wang Weibing, Chen Dapeng, Ming Anjie, et al. Integration of uncooled diode infrared focal plane array [J]. Infrared and Laser Engineering, 2011, 40(6): 997-1000. (in Chinese)
    [4] Ku Kochio, Adrian Leuciuc. A linear MOS transconductor using source degeneration and adaptive biasing[J]. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 2001, 48(10): 937-943.
    [5] Sung-Hyun, Kyu-Ho Kim, Yong-Hwan Kim, et al. A novel CMOS operational transconductance amplifier based on a mobility compensation technique[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2005, 52(1): 37-42.
    [6] Wang Zhenghua, Walter Guggenbuhl. A voltage-controllable linear MOS transconductor using bias offset technique[J]. IEEE Journal of Solid-State Circuits, 1990, 25(1): 315-317.
    [7] Lee Kuenjong, Wang Weichiang, Huang Koushung. A current-mode testable design of operational transconductance amplifier-capacitor filters[J]. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 2002, 46(4): 401-413.
    [8] Worapishet A, Naphaphan C. Current-feedback source-degenerated CMOS transconductor with very high linearity [J]. Electronics Letters, 2003, 39(1): 17-18.
    [9] Ruan A W, Shen K, Hu B. Adjustable gain CTIA cell with variable integration time for IRFPA applications[C]//International Conference on Communications, Circuits and Systems, 2009: 1066-1069.
    [10] Jiang Junwei, Zhao Yiqiang, Meng Fanzhong, et al. High performance readout integrated circuit for IR detectors[J]. Infrared and Laser Engineering, 2009, 38(5): 787-791. (in Chinese)
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Design of front-end circuit for uncooled diode infrared detector

doi: 10.3788/IRLA201645.0104001
  • 1. ASIC Design Center,School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China;
  • 2. Sea Eagle Optoelectronic Information Technology Co.,Ltd.,Tianjin 300192,China

Abstract: A front-end circuit for uncooled diode infrared detector, composed of Gm-C-OP integrated amplifier, was designed. The small input voltage steered from diode detector was transferred into current by an operational transconductance amplifier(OTA), and then the current was converted to voltage by a capacitor transimpedance amplifier(CTIA). The OTA used a current feedback loop to achieve higher linearity and transconductance than the traditional one. By adopting differential input structure, Gm-C-OP integrated amplifier can eliminate the effect of ambient temperature and process on the output signal of detectors. The circuit was fabricated in a 0.35 m CMOS process under 5 V supply voltage. The Gm-C-OP integrated amplifier occupies an area of 0.012 6 mm2. The input differential voltage varied from 0 to 5 mV. Testing results show that the transconductance of OTA is in accordance with the simulation results. The Gm-C-OP integrated amplifier can convert the dynamic small input voltage into a proper voltage linearly and the linearity is 97%. The output range exceeds 2 V.

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