Research on adjustable narrow pulse driver of laser diode with LDMOS

Li Tao; Zhu Lianqing; Liu Feng; Zhang Yinmin

doi:10.3788/IRLA201645.0105003

In this paper a research about adjustable narrow-width pulsed laser diode driver was introduced which is based on the Lateral Double-diffused MOS(LDMOS). Through the analysis of the semiconductor laser driving circuit theory, circuit-level model of RF power transistor was established by using PSPICE simulation software to gain more optimized drive circuit with theoretical calculations. High-speed current-feedback operational amplifier effectively improved the slew rate and the narrow pulse signal frequency response characteristic. The experimental results show that the laser diode driver can generate 2 A current and the pulse width is adjustable from 20 ns to CW, the rise time and fall time are below 10 ns, the pulse repetition frequency is adjustable from 0 to 10 MHz, which demonstrates the feasibility of the design idea to further improve the output performance of semiconductor laser.

Research on adjustable narrow pulse driver of laser diode with LDMOS

1. Beijing Key Laboratory for Optoelectronics Measurement Technology,Beijing Engineering Research Center of Optoelectronic Information and Instruments,Beijing Information Science and Technology University,Beijing 100192,China

Received Date: 2015-05-11

Rev Recd Date: 2015-06-13

Publish Date: 2016-01-25

Key words:

Abstract: In this paper a research about adjustable narrow-width pulsed laser diode driver was introduced which is based on the Lateral Double-diffused MOS(LDMOS). Through the analysis of the semiconductor laser driving circuit theory, circuit-level model of RF power transistor was established by using PSPICE simulation software to gain more optimized drive circuit with theoretical calculations. High-speed current-feedback operational amplifier effectively improved the slew rate and the narrow pulse signal frequency response characteristic. The experimental results show that the laser diode driver can generate 2 A current and the pulse width is adjustable from 20 ns to CW, the rise time and fall time are below 10 ns, the pulse repetition frequency is adjustable from 0 to 10 MHz, which demonstrates the feasibility of the design idea to further improve the output performance of semiconductor laser.

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Reference (12)

[1]	Ma Xiaoyu, Wang Jun, Liu Suping. Present situations of investigations and applications in high power semiconductor lasers[J]. Infrared and Laser Engineering, 2008, 37(2):0189-0194. (in Chinese) 马骁宇, 王俊, 刘素平。国内大功率半导体激光器研究及应用现状[J]. 红外与激光工程, 2008, 37(2): 0189-0194.
[2]	Smolski O V, O'Daniel J K, Johnson E G. Compact vertically stacked master oscillator power amplifier based on grating coupled laser diode [J]. IEEE Photonics Technology Letters, 2006, 18(18): 1931-1933.
[3]	Lu Kai, Liu Baiyu, Bai Yonglin, et al. High power laser diode drive power supply[J]. Infrared and Laser Engineering, 2012, 41(10): 2680-2684. (in Chinese) 卢凯, 刘百玉, 白永林, 等。大功率半导体激光器驱动电源的设计[J]. 红外与激光工程, 2012, 41(10): 2680-2684.
[4]	Lin Ping, Liu Baiyu, Gou Yongsheng, et al. Laser pulse shaping technology based on semiconductor laser [J]. Infrared and Laser Engineering, 2014, 43(1): 0103-0107. (in Chinese) 林平, 刘百玉, 缑永胜, 等。基于半导体激光器的脉冲整形技术[J]. 红外与激光工程, 2014, 43(1): 0103-0107.
[5]	Bagger R, Andersson P, Shin C D. 20-Watt LDMOS power amplifier IC for linear driver application[C]//Microwave Symposium, IEEE/MTT-S International, 2007: 1075-1078.
[6]	Aarts A, D'Halleweyn N, van Langevelde R. A surface-potential-based high-voltage compact LDMOS transistor model[J]. Electron Devices, IEEE Transactions on, 2005, 52(5): 999-1007.
[7]	Jeonghu Han, Changkun Park, Donghyun Baek, et al. A large-signal model of RF LDMOS with skin effects of power combining structures[C]//Radio Frequency integrated Circuits (RFIC) Symposium, 2005: 149-152.
[8]	Richard Chi-His Li. RF Circuit Design [M]. Beijing: Publishing House of Electronics Industry, 2011: 382-386.
[9]	Liu Luncai, Huang Wengang. Optimization of operational amplifiers for high speed and wide bandwidth[J].Microelectronics, 2005, 35(4): 0409-0411. (in Chinese) 刘伦才, 黄文刚。运算放大器的速度/带宽优化设计[J]. 微电子学, 2005, 35(4): 0409-0411.
[10]	Pu Lin, Zou Wei, Bao Xingrun. Study on test techniques for transfer impedance of current feedback operational amplifier [J]. Microelectronics, 2010, 40(5): 735-737. (in Chinese) 蒲林, 邹伟, 保兴润。电流型运算放大器传输阻抗测试技术研究[J]. 微电子学, 2010, 40(5): 735-737.
[11]	Mita R, Palumbo G, Pennisi S. Low-voltage high-drive CMOS current feedback Op-Amp [J]. IEEE Transactions on Circuits and Systems, 2005, 52(6): 317-321.
[12]	Zhao Kejia, Liu Mingliang, Yu Yuehua. Research on the conversion factors between rise time and bandwidth of broadband sampling oscilloscope[J]. Acta Metrologica Sinica, 2006, 27(2): 160-163. (in Chinese) 赵科佳, 刘明亮, 郁月华。宽带取样示波器上升时间与带宽的转换系数的研究[J]. 计量学报, 2006, 27(2): 160-163.

Research on adjustable narrow pulse driver of laser diode with LDMOS

doi: 10.3788/IRLA201645.0105003

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