Dai Mengxi, Li Xiao, Shi Zhu, Dai Qian, Song Haizhi, Tang Zixin, Pu Jianbo. Gain and noise properties of multi-gain-stage superlattice InGaAs avalanche photodiode[J]. Infrared and Laser Engineering, 2016, 45(5): 520009-0520009(6). doi: 10.3788/IRLA201645.0520009
| Citation:
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Dai Mengxi, Li Xiao, Shi Zhu, Dai Qian, Song Haizhi, Tang Zixin, Pu Jianbo. Gain and noise properties of multi-gain-stage superlattice InGaAs avalanche photodiode[J]. Infrared and Laser Engineering, 2016, 45(5): 520009-0520009(6). doi: 10.3788/IRLA201645.0520009
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Gain and noise properties of multi-gain-stage superlattice InGaAs avalanche photodiode
- Received Date: 2015-10-05
- Rev Recd Date:
2015-11-03
- Publish Date:
2016-05-25
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Abstract
The gain and excess noise of multi-gain-stage superlattice InGaAs APD was mainly studied in this paper, and a new multiplication-excess noise model of carriers was established. Based on the conventional Dead Space Multiplication Theory, we analyzed its working principle. Additionally, we considered initial energy from pre-heat electric field and energy band offset, and the modification of dead space length around heterojunction's boundary when carriers entered high-field multiplication layer, as well as the effect of phonon scattering on impact ionization coefficients. Thus we proposed a modified Dead Space Multiplication Theory to guide the calculation of the gain and excess noise factor of this type of APD device. The results demonstrated that under the same condition, multi-gain-stage superlattice InGaAs APD has both higher gain and lower noise than conventional SAGCM APD with a single multiplication layer, and the modified Dead Space Multiplication Theory can be extended to superlattice InGaAs APD structure with more gain stages. On the premise of low excess noise, its mean gain can be improved by increasing number of gain stages.
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References
|
[1]
|
Kwon O H, Hayat M M, Campbell J C, et al. Effect of stochastic dead space on noise in avalanche photodiodes[J]. IEEE Trans Electron Devices, 2004, 51(5): 693-700. |
|
[2]
|
Yuan P, Wang S, Sun X, et al. Avalanche photodiodes with an impact-ionization-engineered multiplication region[J]. IEEE Photon Technol Lett, 2000, 12(10): 1370-1372. |
|
[3]
|
Wang S, Hurst J B, Ma F, et al. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates[J]. IEEE Photon Technol Lett, 2002, 14(12): 1722-1724. |
|
[4]
|
George M W, Madison Compton, David A R, et al. Multi-gain-stage InGaAs avalanche photodiode with enhanced gain and reduced excess noise[J]. IEEE Journal of the Electron Device Society, 2013, 1(2): 54-65. |
|
[5]
|
Jaroslaw Jurenczyk, Dariusz Zak, Janusz Kaniewski, et al. Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes[J]. Optical Applicata, 2013, 43(1): 39-46. |
|
[6]
|
Tsang W T. Semiconductor Photodetector[M]. Beijing: Electronic Industry Press, Tsinghua University Press, 1992: 1-332. |
|
[7]
|
McIntyre R J. Multiplication noise in uniform avalanche photodiodes[J]. IEEE Trans Electron Devices, 1996, 13(1): 164-168. |
|
[8]
|
Majeed M Hayat, Oh-Hyun Kwon, Shuling Wang, et al. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment[J]. IEEE Trans Electron Devices, 2002, 49(12): 2114-2123. |
|
[9]
|
Majeed M Hayat, Bahaa E A Saleh, Malvin C Teich. Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes[J]. IEEE Trans Electron Devices, 1992, 39(3): 546-552. |
|
[10]
|
George M Williams, David A Ramirez, Majeed M Hayat, et al. Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions[J]. Journal of Applied Physics, 2013, 113(9): 093705-1-093705-11. |
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