Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device

Li Xiongjun; Han Fuzhong; Li Dongsheng; Li Lihua; Hu Yanbo; Kong Jincheng; Zhao Jun; Qin Qiang; Zhu Yingfeng; Zhuang Jisheng; Ji Rongbin

doi:10.3788/IRLA201645.0904001

Volume 45 Issue 9

Oct. 2016

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Article Navigation > Infrared and Laser Engineering > 2016 > 45(9): 904001-0904001(7)

Li Xiongjun, Han Fuzhong, Li Dongsheng, Li Lihua, Hu Yanbo, Kong Jincheng, Zhao Jun, Qin Qiang, Zhu Yingfeng, Zhuang Jisheng, Ji Rongbin. Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device[J]. Infrared and Laser Engineering, 2016, 45(9): 904001-0904001(7). doi: 10.3788/IRLA201645.0904001

Citation:

Li Xiongjun, Han Fuzhong, Li Dongsheng, Li Lihua, Hu Yanbo, Kong Jincheng, Zhao Jun, Qin Qiang, Zhu Yingfeng, Zhuang Jisheng, Ji Rongbin. Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device[J]. Infrared and Laser Engineering, 2016, 45(9): 904001-0904001(7). doi: 10.3788/IRLA201645.0904001

Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device

doi: 10.3788/IRLA201645.0904001

1.
Kunming Institute of Physics,Kunming 650223,China

Received Date: 2016-01-05
Rev Recd Date: 2016-02-03
Publish Date: 2016-09-25

Abstract

LW HgCdTe thin films were passivated by CdTe/ZnS composite passivation layer, and the growth process of passivation films was improved. The MIS devices and photodiodes were fabricated by using different passivation process. The SEM, C-V and I-V measurement were used to analyze the interface characteristics and its effect on the performance of devices. The results show that the CdTe film grown by improved process is more compact and has no large hole, the lattice structure order degree of CdTe/HgCdTe interface is improved; The C-V curve of MIS device fabricated by improved passivation process reveals high frequency characteristics, and interface fixed charge layers density is decreased from 1.671011 cm-2 to 5.691010 cm-2. The photodiode with general process has large surface channel leakage current under high reverse bias voltage, whereas the surface leakage current of the device with new process is effectively suppressed.
- LW HgCdTe,
- surface passivation,
- SEM,
- C-V,
- I-V

References

[1]	Nemirovsky Y, Bahir G. Passivation of mercury cadmium telluride surfaces[J]. J Vac Sci Technol A, 1989, 7(2):450-459.
[2]	Zeng Gehong. The arduous journey and brilliant achievements of HgCdTe:1. great invention[J]. Infrared Technology, 2011, 33(5):249-251. (in Chinese)曾戈虹. HgCdTe艰辛的历程、辉煌的成就:一、伟大的发明[J]. 红外技术, 2011, 33(5):249-251.
[3]	Kumar V, Pal R, Chaudhury P K, et al. A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors[J]. Journal of Electronic Materials, 2005, 34(9):1225-1229.
[4]	Wang Nili, Liu Shijia, Lan Tianyi, et al. The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures[C]//SPIE, 2012, 8419:84191D-1-84191D-5.
[5]	Yuan Haoxin, Tong Feiming, Tang Dingyuan. Electrical properties of p-type HgCdTe/ZnS interfaces[J]. Optical Engineerin, 1993, 32:608-612.
[6]	Zhang Xinchang, Zheng Guozhen, Guo Shaoling, et al. Interface electrical characteristics of passivation films on HgCdTe[C]//SPIE, 1998, 3175:183-185.
[7]	Kim J S, Song J H, Su S H. Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamber[C]//SPIE, 2000, 4130:816-822.
[8]	Qiao Hui, Xu Guoqing, Jia Jia, et al. Surface passivation of variable-area HgCdTe photovoltaic detectors[J]. Journal of Semiconductors, 2008, 29(7):1383-1386. (in Chinese)乔辉, 徐国庆, 贾嘉, 等. 碲镉汞光伏探测器的变面积表面钝化研究[J]. 半导体学报, 2008, 29(7):1383-1386.
[9]	Xu Jingjie, Chen Xingguo, Zhou Songmin, et al. Advanecd CdTe passivation layer deposited by evaporation on HgCdTe infrared detectors[J]. Laser Infrared, 2012, 42(11):1263-1267. (in Chinese)徐竟杰, 陈兴国, 周松敏, 等. HgCdTe红外探测器CdTe钝化蒸发生长改进[J]. 激光与红外, 2012, 42(11):1263-1267.
[10]	Han Fuzhong, Geng Song, Shi Qi, et al. Passivation technology of composite film on the HgCdTe IRFPA[J]. Infrared Technology, 2015, 37(10):864-867. (in Chinese)韩福忠, 耿松, 史琪, 等. 碲镉汞红外焦平面器件表面复合膜层钝化技术[J]. 红外技术, 2015, 37(10):864-867.
[11]	Xu Jingjie, Li Haibin, Chen Xingguo, et al. Characterization of CdTe passivation layers grown by evaporation with thermal treatments[C]//SPIE, 2011, 8193:81933A-1-81933A-7.
[12]	Licausi N, Rao S, Bhat I. Low-pressure chemical vapor deposition of CdS and atomic layer deposition of CdTe films for HgCdTe surface passivation[J]. Journal of Electronic Materials, 2011, 40(8):1668-1673.
[13]	Xu Jingjie, Zhou Songmin, Chen Xingguo, et al. Improvement of CdTe passivation by vacuum evaporation on HgCdTe infrared focal plane arrays[C]//SPIE, 2012, 8419:84192D-1-84192D-6.
[14]	Ye Zhenhua, Huang Jian, Yin Wenting, et al. HgCdTe photodiode arrays passivated byMBE in-situ grown CdTe film[J]. Journal of Infrared and Millimeter Waves, 2011, 30(6):495-498. (in Chinese)叶振华, 黄建, 尹文婷, 等. MBE原位碲化镉钝化的碲镉汞长波光电二极管列阵[J]. 红外与毫米波学报, 2011, 30(6):495-498.
[15]	Voitsekhovskii A V, Nesmelov S N, Dzyadukh S M. Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators[J]. Thin Solid Films, 2012, 522:261-266.
[16]	Zhao W F, Cook J, Parodos T, et al. Microstructural characterization of CdTe surface passivation layers[J]. Journal of Electronic Materials, 2010, 39(7):924-929.
[17]	Liu Enke, Zhu Bingsheng, Luo Jinsheng. The Physics of Semiconductors[M]. Beijing:Publishing House of Electronics Industry, 2011. (in Chinese)刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 北京:电子工业出版社, 2011.
[18]	Zhang Xinchang, Wang Rongxing. A study of interface electrical characteristics for passivation films on Hg1-xCdxTe[J]. Optics and Precision Engineering, 1996, 4(5):55-60. (in Chinese)张新昌, 王戎兴. 碲镉汞表面钝化膜界面电学特性研究[J]. 光学精密工程, 1996, 4(5):55-60.
[19]	Srivastav V, Pal R, Venkataraman V. Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling[J]. Journal of Applied Physics, 2010, 108:073112.
[20]	Gravrand O, Mollard L, Largeron C, et al. Study of LWIR and VLWIR focal plane array developments:comparison between p-on-n and different n-on-p technologies on LPE HgCdTe[J]. Journal of Electronic Materials, 2009, 38(8):1733-1740.
[21]	Angelo S G, James B, Amanda G. Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors[J]. Journal of Electronic Materials, 2005, 34(6):913-921.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device

1. Kunming Institute of Physics,Kunming 650223,China

Received Date: 2016-01-05

Rev Recd Date: 2016-02-03

Publish Date: 2016-09-25

Key words:

LW HgCdTe /
surface passivation /
SEM /
C-V /
I-V

Abstract: LW HgCdTe thin films were passivated by CdTe/ZnS composite passivation layer, and the growth process of passivation films was improved. The MIS devices and photodiodes were fabricated by using different passivation process. The SEM, C-V and I-V measurement were used to analyze the interface characteristics and its effect on the performance of devices. The results show that the CdTe film grown by improved process is more compact and has no large hole, the lattice structure order degree of CdTe/HgCdTe interface is improved; The C-V curve of MIS device fabricated by improved passivation process reveals high frequency characteristics, and interface fixed charge layers density is decreased from 1.671011 cm-2 to 5.691010 cm-2. The photodiode with general process has large surface channel leakage current under high reverse bias voltage, whereas the surface leakage current of the device with new process is effectively suppressed.

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Reference (21)

[1]	Nemirovsky Y, Bahir G. Passivation of mercury cadmium telluride surfaces[J]. J Vac Sci Technol A, 1989, 7(2):450-459.
[2]	Zeng Gehong. The arduous journey and brilliant achievements of HgCdTe:1. great invention[J]. Infrared Technology, 2011, 33(5):249-251. (in Chinese)曾戈虹. HgCdTe艰辛的历程、辉煌的成就:一、伟大的发明[J]. 红外技术, 2011, 33(5):249-251.
[3]	Kumar V, Pal R, Chaudhury P K, et al. A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors[J]. Journal of Electronic Materials, 2005, 34(9):1225-1229.
[4]	Wang Nili, Liu Shijia, Lan Tianyi, et al. The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures[C]//SPIE, 2012, 8419:84191D-1-84191D-5.
[5]	Yuan Haoxin, Tong Feiming, Tang Dingyuan. Electrical properties of p-type HgCdTe/ZnS interfaces[J]. Optical Engineerin, 1993, 32:608-612.
[6]	Zhang Xinchang, Zheng Guozhen, Guo Shaoling, et al. Interface electrical characteristics of passivation films on HgCdTe[C]//SPIE, 1998, 3175:183-185.
[7]	Kim J S, Song J H, Su S H. Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamber[C]//SPIE, 2000, 4130:816-822.
[8]	Qiao Hui, Xu Guoqing, Jia Jia, et al. Surface passivation of variable-area HgCdTe photovoltaic detectors[J]. Journal of Semiconductors, 2008, 29(7):1383-1386. (in Chinese)乔辉, 徐国庆, 贾嘉, 等. 碲镉汞光伏探测器的变面积表面钝化研究[J]. 半导体学报, 2008, 29(7):1383-1386.
[9]	Xu Jingjie, Chen Xingguo, Zhou Songmin, et al. Advanecd CdTe passivation layer deposited by evaporation on HgCdTe infrared detectors[J]. Laser Infrared, 2012, 42(11):1263-1267. (in Chinese)徐竟杰, 陈兴国, 周松敏, 等. HgCdTe红外探测器CdTe钝化蒸发生长改进[J]. 激光与红外, 2012, 42(11):1263-1267.
[10]	Han Fuzhong, Geng Song, Shi Qi, et al. Passivation technology of composite film on the HgCdTe IRFPA[J]. Infrared Technology, 2015, 37(10):864-867. (in Chinese)韩福忠, 耿松, 史琪, 等. 碲镉汞红外焦平面器件表面复合膜层钝化技术[J]. 红外技术, 2015, 37(10):864-867.
[11]	Xu Jingjie, Li Haibin, Chen Xingguo, et al. Characterization of CdTe passivation layers grown by evaporation with thermal treatments[C]//SPIE, 2011, 8193:81933A-1-81933A-7.
[12]	Licausi N, Rao S, Bhat I. Low-pressure chemical vapor deposition of CdS and atomic layer deposition of CdTe films for HgCdTe surface passivation[J]. Journal of Electronic Materials, 2011, 40(8):1668-1673.
[13]	Xu Jingjie, Zhou Songmin, Chen Xingguo, et al. Improvement of CdTe passivation by vacuum evaporation on HgCdTe infrared focal plane arrays[C]//SPIE, 2012, 8419:84192D-1-84192D-6.
[14]	Ye Zhenhua, Huang Jian, Yin Wenting, et al. HgCdTe photodiode arrays passivated byMBE in-situ grown CdTe film[J]. Journal of Infrared and Millimeter Waves, 2011, 30(6):495-498. (in Chinese)叶振华, 黄建, 尹文婷, 等. MBE原位碲化镉钝化的碲镉汞长波光电二极管列阵[J]. 红外与毫米波学报, 2011, 30(6):495-498.
[15]	Voitsekhovskii A V, Nesmelov S N, Dzyadukh S M. Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators[J]. Thin Solid Films, 2012, 522:261-266.
[16]	Zhao W F, Cook J, Parodos T, et al. Microstructural characterization of CdTe surface passivation layers[J]. Journal of Electronic Materials, 2010, 39(7):924-929.
[17]	Liu Enke, Zhu Bingsheng, Luo Jinsheng. The Physics of Semiconductors[M]. Beijing:Publishing House of Electronics Industry, 2011. (in Chinese)刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 北京:电子工业出版社, 2011.
[18]	Zhang Xinchang, Wang Rongxing. A study of interface electrical characteristics for passivation films on Hg1-xCdxTe[J]. Optics and Precision Engineering, 1996, 4(5):55-60. (in Chinese)张新昌, 王戎兴. 碲镉汞表面钝化膜界面电学特性研究[J]. 光学精密工程, 1996, 4(5):55-60.
[19]	Srivastav V, Pal R, Venkataraman V. Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling[J]. Journal of Applied Physics, 2010, 108:073112.
[20]	Gravrand O, Mollard L, Largeron C, et al. Study of LWIR and VLWIR focal plane array developments:comparison between p-on-n and different n-on-p technologies on LPE HgCdTe[J]. Journal of Electronic Materials, 2009, 38(8):1733-1740.
[21]	Angelo S G, James B, Amanda G. Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors[J]. Journal of Electronic Materials, 2005, 34(6):913-921.

Study of CdTe/ZnS composite passivation layer effect on the performance of LW HgCdTe device

doi: 10.3788/IRLA201645.0904001

Abstract

References

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通讯作者: 陈斌, bchen63@163.com

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