Volume 45 Issue 9
Oct.  2016
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Wang Junlong, Yang Dabao, Xing Dong, Liang Shixiong, Zhang Lisen, Zhao Xiangyang, Feng Zhihong. Equivalent circuit model study of mixing diode with cut-off frequency of 5 THz[J]. Infrared and Laser Engineering, 2016, 45(9): 925001-0925001(5). doi: 10.3788/IRLA201645.0925001
Citation: Wang Junlong, Yang Dabao, Xing Dong, Liang Shixiong, Zhang Lisen, Zhao Xiangyang, Feng Zhihong. Equivalent circuit model study of mixing diode with cut-off frequency of 5 THz[J]. Infrared and Laser Engineering, 2016, 45(9): 925001-0925001(5). doi: 10.3788/IRLA201645.0925001

Equivalent circuit model study of mixing diode with cut-off frequency of 5 THz

doi: 10.3788/IRLA201645.0925001
  • Received Date: 2016-01-10
  • Rev Recd Date: 2016-02-15
  • Publish Date: 2016-09-25
  • An equivalent circuit model of mixing Schottky diode with cut-off frequency of 5 THz was reported based on DC measurement and 3-D electromagnetic(EM)simulation combined of EM simulator and circuit simulator. The model of nonlinear Schottky junction and 3-D periphery structure full-wave simulation model was researched carefully, the four-ports model considered real circuit topology was established. The equivalent circuit model can be used for design of mixers worked at the lower end of terahertz band, the methodology of this diode model was a reference of much more higher terahertz frequency. A sub-harmonic 220 GHz wideband mixer was designed based on the model, the double sideband conversion loss was less than 10 dB in the range of 192 GHz to 230 GHz, the measured result was well with the simulated result.
  • [1] Liu Jia, Fan Wenhui. Investigation of various fabrics in terahertz time-domain spectroscopy[J]. Infrared and Laser Engineering, 2013, 42(6):1537-1541.(in Chinese)刘佳, 范文慧. 常见服装面料的太赫兹光谱研究[J]. 红外与激光工程, 2013, 42(6):1537-1541.
    [2] Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory Techniques, 2002, 50(3):910-928.
    [3] Li Fan, Shi Yanli, Zhao Lusheng, et al. Simulation and calculation of I-V characteristics of GaAs MESFET in THz detection[J]. Infrared and Laser Engineering, 2011, 40(7):1205-1208. (in Chinese)李凡, 史衍丽, 赵鲁生, 等. 太赫兹探测用GaAs MESFET I-V特性模拟计算[J]. 红外与激光工程, 2011, 40(7):1205-1208.
    [4] Li Hongguang, Yang Hongru, Xue Zhanli, et al. Terahertz Radiation detection of low temperature blackbody based on narrowband spectral filter method[J]. Optics and Precision Engineering, 2013, 21(6):1410-1416. (in Chinese)李宏光, 杨鸿儒, 薛战理, 等. 窄带光谱滤光法探测低温黑体太赫兹辐射[J]. 光学精密工程, 2013, 21(6):1410-1416.
    [5] Lipsey R, Jones S, Jones J, et al. Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers[J]. IEEE, Electron Devices, 1997, 40(11):1843-1850.
    [6] Hesler J L. Planar Schottky diodes in submillimeter-wavelength wave-guide receivers[D]. Charlottesville:Vniveristy of Virginia, 1996.
    [7] Hesler J L, Hall W R, Crowe T W, et al. Fixed-tuned submillimeter wavelength waveguide mixers using planar schottky-barrier diodes[J]. IEEE Transactions on Microwave Theory and Techniques, 1997, 45(5):653-658.
    [8] Hui K, Hesler J L, Kurtz D S, et al. A micromachined 585 GHz Schottky mixer[J]. IEEE Microwave and Guided Wave Letters, 2000, 10(9):374-376.
    [9] Thomas B, Maestrini A, Beaudim G. A low-noise fixed-tuned 300-360 GHz sub-harmonic mixer using planar Schottky diodes[J]. IEEE Microw Wirel Compon Lett, 2005, 15(12):865-867.
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Equivalent circuit model study of mixing diode with cut-off frequency of 5 THz

doi: 10.3788/IRLA201645.0925001
  • 1. National Key Laboratory of ASIC,Shijiazhuang 050051,China;
  • 2. The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

Abstract: An equivalent circuit model of mixing Schottky diode with cut-off frequency of 5 THz was reported based on DC measurement and 3-D electromagnetic(EM)simulation combined of EM simulator and circuit simulator. The model of nonlinear Schottky junction and 3-D periphery structure full-wave simulation model was researched carefully, the four-ports model considered real circuit topology was established. The equivalent circuit model can be used for design of mixers worked at the lower end of terahertz band, the methodology of this diode model was a reference of much more higher terahertz frequency. A sub-harmonic 220 GHz wideband mixer was designed based on the model, the double sideband conversion loss was less than 10 dB in the range of 192 GHz to 230 GHz, the measured result was well with the simulated result.

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