Volume 45 Issue 12
Jan.  2017
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Article Navigation >  Infrared and Laser Engineering  > 2016  >  45(12): 1206013-1206013(5)

Yuan Wei, Xing Xin, Han Dongjia, Li Zehan, Xue Bing, Kobayashi Takayoshi, Du Juan, Zhao Yuanan, Leng Yuxin, Shao Jianda. Ultrafast laser pre-damage dynamics process in Al2O3/SiO2 high reflectors[J]. Infrared and Laser Engineering, 2016, 45(12): 1206013-1206013(5). doi: 10.3788/IRLA201645.1206013
Citation: Yuan Wei, Xing Xin, Han Dongjia, Li Zehan, Xue Bing, Kobayashi Takayoshi, Du Juan, Zhao Yuanan, Leng Yuxin, Shao Jianda. Ultrafast laser pre-damage dynamics process in Al2O3/SiO2 high reflectors[J]. Infrared and Laser Engineering, 2016, 45(12): 1206013-1206013(5). doi: 10.3788/IRLA201645.1206013
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Ultrafast laser pre-damage dynamics process in Al2O3/SiO2 high reflectors

doi: 10.3788/IRLA201645.1206013
  • 1.

    State Key Laboratory of High Field Laser Physics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;

  • 2.

    Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;

  • 3.

    Advanced Ultrafast Laser Research Center,University of Electro-Communications,Tokyo 182-8585,Japan;

  • 4.

    University of Chinese Academy of Sciences,Beijing 100049,China

  • Received Date: 2016-04-12
  • Rev Recd Date: 2016-05-14
  • Publish Date: 2016-12-25
  • Ultrafast carrier dynamics in Al2O3/SiO2 high reflectors was investigated by UV femtosecond laser. It was identified by laser spectroscopy that, the carrier dynamics contributed from the front few layers of Al2O3 played a dominating role in the initial laser-induced damage of the UV reflector. Time-resolved reflection decrease after the UV excitation was observed by pump-probe experiment, and the peak value of the variation of the reflectivity of the probe light changed from 417 nm to 402 nm in 2.3 ps. To interpret the laser induced carrier dynamics further, a specific theoretical model including multiphoton ionization(MPI), avalanche ionization(AI), and the mid-gap defect state was built to simulate the evolution process of the electron density in the conduction band, it pointed out that during the conduction band free electron relaxation process, the mid-gap defect state locating about one photon below the conduction band was formed because of the interaction between electrons and lattice. The initial electron density effect of the mid-gap defect state has important influence to the damage threshold of the Al2O3/SiO2 high reflectors. This model agrees very well with the experimental results.
  • [1] Choudhury D, Macdonald J R, Kar A K, Ultrafast laser inscription:perspectives on future integrated applications[J]. Laser Photonics Rev, 2014, 8(6):827-846.
    [2] Jasapara J, Nampoothiri A V V, Rudolph W, et al. Femtosecond laser pulse induced breakdown in dielectric thin films[J]. Phys Rev B, 2001, 63:045117.
    [3] Fischbach S, Gorbach A V, Nuzzo D D, et al. Near infrared ultrafast pump-probe spectroscopy with ZrF4-BaF2-LaF3-AlF3-NaF fiber supercontinuum[J]. Applied Physics Letters, 2015, 107:021103.
    [4] Chen S, Zhao Y, Yu Z, et al. Femtosecond laser-induced damage of HfO2/SiO2 mirror with different stack structure[J]. Appl Opt, 2012, 51(25):6188-6195.
    [5] Mouskeftaras A, Guizard S, Fedorov N, et al. Mechanisms of femtosecond laser ablation of dielectrics revealed by double pump-probe experiment[J]. Appl Phys A, 2013, 110:709-715.
    [6] Puerto D, Siegel J, Gawelda W, et al. Dynamics of plasma formation, relaxation, and topography modification induced by femtosecond laser pulses in crystalline and amorphous dielectrics[J]. J Opt Soc Am B, 2010, 27:1065-1076.
    [7] Li Z H, Du J, Zhao Y A, et al. Modeling the effect of nanosecond laser conditioning on the femtosecond laser-induced damage of optical films[J]. Optics Express, 2015, 23(11):14775-14783.
    [8] Sudrie L, Couairon A, Franco M, et al. Femtosecond laser-induced damage and filamentary propagation in fused silica[J]. Phys Rev Lett, 2002, 89:186601.
    [9] Starke K, Ristau D, Welling H, et al. Investigations in the nonlinear behavior of dielectrics by using ultrashort pulses[C]//SPIE, 2004, 5273:501-514.
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Ultrafast laser pre-damage dynamics process in Al2O3/SiO2 high reflectors

doi: 10.3788/IRLA201645.1206013
  • 1. State Key Laboratory of High Field Laser Physics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;
  • 2. Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;
  • 3. Advanced Ultrafast Laser Research Center,University of Electro-Communications,Tokyo 182-8585,Japan;
  • 4. University of Chinese Academy of Sciences,Beijing 100049,China
  • Received Date: 2016-04-12
  • Rev Recd Date: 2016-05-14
  • Publish Date: 2016-12-25

Abstract: Ultrafast carrier dynamics in Al2O3/SiO2 high reflectors was investigated by UV femtosecond laser. It was identified by laser spectroscopy that, the carrier dynamics contributed from the front few layers of Al2O3 played a dominating role in the initial laser-induced damage of the UV reflector. Time-resolved reflection decrease after the UV excitation was observed by pump-probe experiment, and the peak value of the variation of the reflectivity of the probe light changed from 417 nm to 402 nm in 2.3 ps. To interpret the laser induced carrier dynamics further, a specific theoretical model including multiphoton ionization(MPI), avalanche ionization(AI), and the mid-gap defect state was built to simulate the evolution process of the electron density in the conduction band, it pointed out that during the conduction band free electron relaxation process, the mid-gap defect state locating about one photon below the conduction band was formed because of the interaction between electrons and lattice. The initial electron density effect of the mid-gap defect state has important influence to the damage threshold of the Al2O3/SiO2 high reflectors. This model agrees very well with the experimental results.

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