Volume 46 Issue 1
Feb.  2017
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Wang Junlong, Yang Dabao, Xing Dong, Liang Shixiong, Zhang Lisen, Zhao Xiangyang, Feng Zhihong. Research of 0.2 THz broadband unbalanced multiplier circuit[J]. Infrared and Laser Engineering, 2017, 46(1): 106003-0106003(4). doi: 10.3788/IRLA201746.0106003
Citation: Wang Junlong, Yang Dabao, Xing Dong, Liang Shixiong, Zhang Lisen, Zhao Xiangyang, Feng Zhihong. Research of 0.2 THz broadband unbalanced multiplier circuit[J]. Infrared and Laser Engineering, 2017, 46(1): 106003-0106003(4). doi: 10.3788/IRLA201746.0106003

Research of 0.2 THz broadband unbalanced multiplier circuit

doi: 10.3788/IRLA201746.0106003
  • Received Date: 2016-05-05
  • Rev Recd Date: 2016-06-15
  • Publish Date: 2017-01-25
  • An 0.2 THz brodband unbalanced doubler multiplier was designed and realized based on four anodes in anti-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 75 m thick quartz. The circuit output power and efficiency was measured under the condition of small and large input power. The measured efficiency was bigger than 3% over the band of 210 GHz to 224 GHz with the input power between 10 mW to 15 mW under the condition of forward bias voltage. The peak efficiency is 7.8% at the frequency of 212 GHz. The measured efficiency was bigger than 3.6% over the band of 210 GHz to 224 GHz with the input power between 48 mW to 88 mW under the condition of self-biased. The peak efficiency is 5.7% at the frequency of 214 GHz. The biggest output power is 5.7 mW and 7.5 mW at the fixed frequency of 212 GHz when the input power is 132 mW under the condition of self-biased and reverse bias voltage of -0.8 V separately.
  • [1] Wu Bin, Liu Zhiming, Wang Hengfei, et al. Terahertz generation and transmission in CaAs waveguide structure[J]. Infrared and Laser Engineering, 2014, 43(12):3903-3906. (in Chinese)吴斌, 刘志明, 王恒飞, 等. 太赫兹波在砷化镓波导中的产生与传输[J]. 红外与激光工程, 2014, 43(12):3903-3906.
    [2] Goutam Chattopadhyay. Technology, capabilities and performance of low power terahertz sources[J]. IEEE Transactions on Terahertz Science and Technology, 2011, 1(1):33-52.
    [3] Shen Jin'e, Rong Jian, Liu Wenxin. Progress of terahertz in communication technology[J]. Infrared and Laser Engineering, 2006, 35(S):342-347. (in Chinese)申金娥, 荣健, 刘文鑫. 太赫兹技术在通信方面的研究进展[J]. 红外与激光工程, 2006, 35(S):342-347.
    [4] Jiang Jun, Zhang Jian, Deng Xianjin, et al. 340 GHz frequency multiplier without matching circuit based on Schottky diodes[J]. Infrared and Laser Engineering, 2014, 43(12):4028-4034.
    [5] Alain Maestrini, John S Ward, John J Gill, et al. A 540-640 GHz high-efficiency four-anode frequency tripler[J]. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(9):2835-2843.
    [6] David W Porterfield. High-efficiency terahertz frequency tripler[C]//IEEE, Microwave Symp, 2007:337-340.
    [7] Yao Changfei, Zhou Ming, Luo Yunsheng, et al. A 5.4 mW and 6.1% efficiency fixed-tuned 214 GHz frequency doubler with Schottky barrier diodes[J]. High Technology Letters,2015, 21(11):85-89.
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Research of 0.2 THz broadband unbalanced multiplier circuit

doi: 10.3788/IRLA201746.0106003
  • 1. National Key Laboratory of ASIC,Shijiazhuang 050051,China;
  • 2. The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

Abstract: An 0.2 THz brodband unbalanced doubler multiplier was designed and realized based on four anodes in anti-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 75 m thick quartz. The circuit output power and efficiency was measured under the condition of small and large input power. The measured efficiency was bigger than 3% over the band of 210 GHz to 224 GHz with the input power between 10 mW to 15 mW under the condition of forward bias voltage. The peak efficiency is 7.8% at the frequency of 212 GHz. The measured efficiency was bigger than 3.6% over the band of 210 GHz to 224 GHz with the input power between 48 mW to 88 mW under the condition of self-biased. The peak efficiency is 5.7% at the frequency of 214 GHz. The biggest output power is 5.7 mW and 7.5 mW at the fixed frequency of 212 GHz when the input power is 132 mW under the condition of self-biased and reverse bias voltage of -0.8 V separately.

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