High efficiency 170 GHz balanced Schottky diode frequency doubler

He Yue; Jiang Jun; Lu Bin; Chen Peng; Huang Kun; Huang Wei

doi:10.3788/IRLA201746.0120003

The output power of terahertz resource is a critical parameter to limit the long range application of terahertz technology. To accomplish the high efficiency terahertz multiplier, two high-efficiency 170 GHz balanced doublers were built using the two planar Schottky diodes with diverse electrical specification. The employed equal circuit diode model, based on the developed high-frequency characteristic modeling, considered the IV characteristics, the limits drift velocity saturation of carries, DC series resistance and skin effect simultaneously. From the comparison and analysis of the simulated data, the impact of diode electrical parameter on the doubler performance was discussed. Test data show that the two 170 GHz balanced doublers show 11% and 24% highest efficiency respectively, 15 mW and 25 mW output power correspondingly across a 155-178 GHz band. As shown in measured result, the employed Schottky diode modeling and balance structure is suitable option to design high efficiency terahertz multiplier.

High efficiency 170 GHz balanced Schottky diode frequency doubler

1. Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621999,China;

2. Microsystem &Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610299 China

Received Date: 2016-05-05

Rev Recd Date: 2016-06-03

Publish Date: 2017-01-25

Key words:

Abstract: The output power of terahertz resource is a critical parameter to limit the long range application of terahertz technology. To accomplish the high efficiency terahertz multiplier, two high-efficiency 170 GHz balanced doublers were built using the two planar Schottky diodes with diverse electrical specification. The employed equal circuit diode model, based on the developed high-frequency characteristic modeling, considered the IV characteristics, the limits drift velocity saturation of carries, DC series resistance and skin effect simultaneously. From the comparison and analysis of the simulated data, the impact of diode electrical parameter on the doubler performance was discussed. Test data show that the two 170 GHz balanced doublers show 11% and 24% highest efficiency respectively, 15 mW and 25 mW output power correspondingly across a 155-178 GHz band. As shown in measured result, the employed Schottky diode modeling and balance structure is suitable option to design high efficiency terahertz multiplier.

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Reference (13)

[1]	Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory Techniques, 2002, 50(3):910-928.
[2]	Guo Lantao, Mu Kaijun, Deng Chao, et al. Terahertz spectroscopy and imaging[J]. Infrared and Laser Engineering, 2013, 40(1):205-209. (in Chinese)郭澜涛, 牧凯军, 邓朝, 等. 太赫兹波谱与成像技术[J]. 红外与激光工程, 2013, 40(1):205-209.
[3]	Alderman B, Herry M, Sanghera H, et al. Schottky diode technology at Rutherford Appleton Laboratory[C]//2011 IEEE International Conference on Microwave Technology Computational Electromagnetics, 2011:4-6.
[4]	Siles J V, Maestrini A, Alderman B, et al. A single waveguide in phase power combined frequency doubler at 190 GHz[J]. IEEE Transaction Microwave Wireless Conponents Letters, 2011, 21(6):332-334.
[5]	Maestrini A, Mehdi I, Siles J V, et al. Design and characterization of a room tempertature all-solid-state electronic source tunable from 2.48 and 2.75 THz[J]. IEEE Transaction on Microwave Theory and Techniques, 2012, 2(2):177-185.
[6]	C Peng, D Xianjin, C Binbin, et al. A 220 GHz frequency doubler based on plannar Schottky diodes[C]//The 38th International Conference on Infrared, Millimeter and Terahertz Waves, 2013:1-6.
[7]	Jiang Jun, Zhang Jian, Deng Xianjin, et al. 340 GHz frequency multiplier without matching circuit based on Shottky diodes[J]. Infrared and Laser Engineering, 2014, 43(12):4028-4034. (in Chinese)蒋均, 张建, 邓贤进, 等. 340 GHz基于肖特基二极管未匹配电路倍频源[J]. 红外与激光工程, 2014, 43(12):4028-4034.
[8]	Miao Li, Huang Wei, Jiang Jun, et al. Research on a 0.17 THz Schottky varactors doubler[J]. Infrared and Laser Engineering, 2015, 44(12):4028-4034. (in Chinese)缪丽, 黄维, 蒋均, 等. 基于肖特基二极管的0.17 THz二倍频器研制[J]. 红外与激光工程, 2015, 44(12):4028-4034.
[9]	Yao Changfei, Zhou Ming, Luo Yunsheng, et al. A190-220 GHz high efficiency schottky diode doubler with circuit substrate filp-chip mounted[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1):6-9. (in Chinese)姚常飞, 周明, 罗运生, 等. 基于倒扣技术的190-225 GHz肖特基二极管高效二倍频器[J]. 红外与毫米波学报, 2015, 34(1):6-9.
[10]	Lipsey R E, Jones S H, Jones J R, et al. Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers[J]. IEEE Transaction on Electron Devices, 1997, 44(11):1843-1851.
[11]	Pardo D, Grajal J, Peraz-Moreno C G, et al. An assessment of availabler models for the design of shottky-based multipliers up to THz frequencies[J]. IEEE Transaction on Terahertz Science and Technology, 2014, 4(2):277-287.
[12]	Bhaumik K, Gelmont B, Mattauch R J, et al. Series impedance of GaAs planar schottky diodes opertated to 500 GHz[J]. IEEE Transaction on Microwave Theory and Techniques, 1992, 40(5):880-886.
[13]	Kiuru T. Characterization, modeling, and design for applications of waveguide impedance tuners and schottkty diodes at millimeter wavelengths[D]. Espoo:Aalto University, 2011.

High efficiency 170 GHz balanced Schottky diode frequency doubler

doi: 10.3788/IRLA201746.0120003

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