Study on connected defective elements in focal plane array identification by response and crosstalk

Hou Zhijin; Fu Li; Wang Wei; Lv Yanqiu; Lu Zhengxiong; Wang Jinchun

doi:10.3788/IRLA201746.0420002

The connected defective elements in Focal Plane Array (FPA) were tested by optical microscopy and FPA test-bench. The reasons of forming connected defective elements in FPA were studied. Results show that it is difficult to identify connected defective elements by optical microscopy. And it is also difficult to identify connected defective elements by FPA response testing bench because the response voltage of connected defective elements is basically the same as that of normal elements. The connected defective elements can be identified effectively by FPA crosstalk testing bench because the crosstalk between connected defective elements is 100%, which is obviously different from that of the normal elements. At this point, the response voltage of connected defective elements is average of that of the normal elements. The tables with connecting or the electrodes with connecting caused by the process of photolithography and eroding result in the generation of the connected defective elements. As well as the indium bump with connecting caused by the process of photolithography and lift-off also leads to the generation of the connected defective elements. Fabrication process such as photolithography, eroding and lift-off was optimized to reduce connected defective elements.

Study on connected defective elements in focal plane array identification by response and crosstalk

1. School of Electronics and Information,Northwestern Polytechnical University,Xi'an 710072,China;

2. China Airborne Missle Academy,Luoyang 471099,China;

3. Aviation Key Laboratory of Science and Technology on Infrared detector,Luoyang 471099,China

Received Date: 2016-08-08

Rev Recd Date: 2016-09-20

Publish Date: 2017-04-25

Key words:

Abstract: The connected defective elements in Focal Plane Array (FPA) were tested by optical microscopy and FPA test-bench. The reasons of forming connected defective elements in FPA were studied. Results show that it is difficult to identify connected defective elements by optical microscopy. And it is also difficult to identify connected defective elements by FPA response testing bench because the response voltage of connected defective elements is basically the same as that of normal elements. The connected defective elements can be identified effectively by FPA crosstalk testing bench because the crosstalk between connected defective elements is 100%, which is obviously different from that of the normal elements. At this point, the response voltage of connected defective elements is average of that of the normal elements. The tables with connecting or the electrodes with connecting caused by the process of photolithography and eroding result in the generation of the connected defective elements. As well as the indium bump with connecting caused by the process of photolithography and lift-off also leads to the generation of the connected defective elements. Fabrication process such as photolithography, eroding and lift-off was optimized to reduce connected defective elements.

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Reference (13)

[1]	AseevA L. Photodetectors Based on the Cadmium-Mercury-Tellurium Epitaxial System[M]. Novosibirsk:SB RAS Publishing House, 2012.
[2]	Rogalski A. Infrared Detectors[M]. New York:CRC Press, 2011.
[3]	Bowden N, Brittain S, Evans A G, et al. Spontaneous formation of ordered structures in thin films of metals supported on an elastomeric polymer[J]. Nature, 1998, 393(14):146-149.
[4]	Genzer J, Groenewold J. Soft matter with hard skin:from skin wrinkles to templating and material characterization[J]. Soft Matter, 2006, 2:310-323.
[5]	Huck W, Bowden N, Onck P, et al. Ordering of spontaneously formed buckles on planar surfaces[J]. Langmuir, 2000, 16(7):3497-3501.
[6]	Meng Qingduan, Lv Yanqiu, Lu Zhengxiong, et al. Stress in InSb infrared focal plane array detector analyzed with ANSYS[J]. J Infrared Millim Waves, 2010, 29(6):431-434. (in Chinese)孟庆端, 吕衍秋, 鲁正雄, 等. InSb红外焦平面探测器结构应力的ANSYS分析[J]. 红外毫米波学报, 2010, 29(6):431-434.
[7]	Chris Littler. Characterization of impurities and defects in InSb and HgCdTe using novel magneto-optical techniques[C]//SPIE, 1993, 2021:184-201.
[8]	Mike Davis, Mark Greiner. Indium antimonide large-format detector arrays[J]. Optical Engineering, 2011, 50(6):061016.
[9]	Rawe R, Martin C, Garter M, et al. Novel high fill-factor, small pitch, reticulated InSb IR FPA design[C]//SPIE, 2005, 5783:899-906.
[10]	Zhou Huixin, Yin Shimin, Liu Shangqian, et al. Algorithm of blind pixels auto searching and compensation for IRFPA[J]. Acta Photonica Sinica, 2004, 33(5):598-600. (in Chinese)周慧鑫, 殷世民, 刘上乾, 等. 红外焦平面器件盲元检测及补偿算法[J]. 光子学报, 2004, 33(5):598-600.
[11]	Guo Jichang, Chen Minjun, Li Qiang, et al. Hardware and software design for invalid pixels processing of infrared focal plane array detectors[J]. Opto-Electronic Engineering, 2006, 33(6):57-60. (in Chinese)郭继昌, 陈敏俊, 李锵, 等. 红外焦平面失效元处理方法及软硬件实现,[J]. 光电工程, 2006, 33(6):57-60.
[12]	Wang Wei, Fan Yangyu, Si Junjie, et al. Analysis on formation of bad pixel cluster in IRFPA[J]. Infrared and Laser Engineering, 2012, 41(11):2857-2860. (in Chinese)王巍, 樊养余, 司俊杰, 等. 红外焦平面阵列盲元簇成因分析[J]. 红外与激光工程, 2012, 41(11):2857-2860.
[13]	Wang Wei, Fan Yangyu, Si Junjie, et al. Types and determination of bad pixels in IRFPA[J]. Infrared and Laser Engineering, 2012, 41(9):2261-2264. (in Chinese)王巍, 樊养余, 司俊杰, 等. 红外焦平面阵列盲元类型与判别[J]. 红外与激光工程, 2012, 41(9):2261-2264.

Study on connected defective elements in focal plane array identification by response and crosstalk

doi: 10.3788/IRLA201746.0420002

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