Study on performance of InAlSb infrared photodiode

Zhu Xubo; Li Mo; Chen Gang; Zhang Lixue; Cao Xiancun; Lv Yanqiu

doi:10.3788/IRLA201746.0704002

The InAlSb/InSb material of p-i-n structure was grown by Molecular Beam Epitaxy(MBE) on(100) InSb substrate. The current suppression effect of the barrier layer on the dark current was verified by growing a barrier layer with a wide gap between the absorber layer and the contact layer. The electrical properties of photodiode fabricated by InAlSb epitaxial material were compared with that of traditional InSb bulk material. When the external bias voltage is -0.1 V, the reverse bias current of p+-p+-n--n+ InAlSb device and p+-n--n+ InAlSb device is 3.410-6 Acm-2 and 7.810-6 Acm-2 at 77 K, respectively. The p+-p+-n--n+ InAlSb device suppresses the dark current at a very low level. It provides an important foundation for improving operating temperature of the infrared detector.

Study on performance of InAlSb infrared photodiode

1. China Airborne Missile Academy,Luoyang 471009,China;

2. Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China

Received Date: 2016-11-11

Rev Recd Date: 2016-12-03

Publish Date: 2017-07-25

Key words:

Abstract: The InAlSb/InSb material of p-i-n structure was grown by Molecular Beam Epitaxy(MBE) on(100) InSb substrate. The current suppression effect of the barrier layer on the dark current was verified by growing a barrier layer with a wide gap between the absorber layer and the contact layer. The electrical properties of photodiode fabricated by InAlSb epitaxial material were compared with that of traditional InSb bulk material. When the external bias voltage is -0.1 V, the reverse bias current of p+-p+-n--n+ InAlSb device and p+-n--n+ InAlSb device is 3.410-6 Acm-2 and 7.810-6 Acm-2 at 77 K, respectively. The p+-p+-n--n+ InAlSb device suppresses the dark current at a very low level. It provides an important foundation for improving operating temperature of the infrared detector.

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Reference (13)

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Study on performance of InAlSb infrared photodiode

doi: 10.3788/IRLA201746.0704002

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