Sun Shengming, Fan Jie, Xu Li, Zou Yonggang, Ma Xiaohui, Chen Qihe. Design and optimization of 976 nm tapered semiconductor laser[J]. Infrared and Laser Engineering, 2017, 46(12): 1205004-1205004(6). doi: 10.3788/IRLA201746.1205004
| Citation:
|
Sun Shengming, Fan Jie, Xu Li, Zou Yonggang, Ma Xiaohui, Chen Qihe. Design and optimization of 976 nm tapered semiconductor laser[J]. Infrared and Laser Engineering, 2017, 46(12): 1205004-1205004(6). doi: 10.3788/IRLA201746.1205004
|
Design and optimization of 976 nm tapered semiconductor laser
- 1.
State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China
- Received Date: 2017-04-10
- Rev Recd Date:
2017-05-20
- Publish Date:
2017-12-25
-
Abstract
Tapered semiconductor lasers are characterized by high brightness and high beam quality. With the help of the numerical simulation software Lastip, the structure of 976 nm tapered semiconductor laser was optimized. In the condition of low confinement factor Г, the InGaAs/AlGaAs quantum wells thickness and the asymmetric waveguide thickness ratio were determined. The inject power of master oscillator(MO) and the diffraction distribution characteristics of the fundamental lateral mode coupled tapered section were analyzed. The results show that, when the operating current is 3 A and the optical confinement factors are 2%, the simulation shows the fundamental lateral mode of the optimized design has more concentrated distribution compared with the conventional 2.67 W of the single quantum well(SQW) structure. The injected optical power was increased from 2.76 W to 3.67 W. And, the diffraction distribution of the fundamental lateral mode coupled into the tapered section was more uniform, the conversion efficiency of MO of optimized structure was more stable.
-
References
|
[1]
|
Xu Zhengping, Shen Honghai, Xu Yongsen. Review of the development of laser active imaging system with direct ranging[J]. Chinese Optics, 2015, 8(1):28-38. (in Chinese) |
|
[2]
|
Zhao Yuan'an, Hu Guohang, Liu Xiaofeng, et al. Laser conditioning technology and its applications[J]. Optics and Precision Engineering, 2016, 24(12):2938-2947. (in Chinese) |
|
[3]
|
Liu Youqiang, Cao Yinhua, et al. 5 kW fiber coupling diode laser for laser processing[J]. Optics and Precision Engineering, 2015, 23(5):1279-1287. (in Chinese) |
|
[4]
|
Zeng Fei, Gao Shijie, San Xiaogang, et al. Development status and trend of airborne laser comumunication terminals[J]. Chinese Optics, 2016, 9(1):0065. (in Chinese) |
|
[5]
|
Yang Guang, Liu Huanhuan, Zhou Jiaping, et al.Research on laser deposition repair aircraft vertical tail beam[J]. Infrared and Laser Engineering, 2017, 46(2):0206004. (in Chinese) |
|
[6]
|
Ma Yufei, He Ying, Yu Xin, et al. Research progress of laser source used in laser induced plasma ignition[J]. Infrared and Laser Engineering, 2016, 45(11):1136003. (in Chinese) |
|
[7]
|
Walpole J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Optical and Quantum Electronics, 1996, 28(6):623-645. |
|
[8]
|
Walther M, Kiefer R. Improved beam quality for high-power tapered laser diodes with LMG(low-modal-gain) epitaxial layer structures[C]//Proceedings of SPIE-the International Society for Optical Engineering, 1998, 1117(12):304433. |
|
[9]
|
Tijero J M G, Odriozola H, Borruel L, et al. Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J]. IEEE Photonics Technology Letters, 2007, 19(20):1640-1642. |
|
[10]
|
Li Jing, Qiu Yuntao. High brightness tapered diode laser[J]. Chinese Journal of Luminescence, 2016, 37(8):990-995. (in Chinese) |
|
[11]
|
Wei Xing. Near diffraction limited high power tapered semiconductor lasers[D]. Changchun:Changchun University of Science and Technology, 2006.(in Chinese) |
|
[12]
|
Li Jing, Qiu Yuntao. Photoectching of tapered diode laser wafer[J]. Chinese Journal of Luminescence,2016, 37(12):1502-1506. (in Chinese) |
|
[13]
|
Mller A, Fricke J, Bugge F, et al. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm[J]. Applied Physics B, 2016, 122(4):1-6. |
-
-
Proportional views
-
DownLoad: