Volume 46 Issue 12
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Shi Zhu, Dai Qian, Song Haizhi, Xie Heping, Qin Wenzhi, Deng Jie, Ke Zungui, Kong Fanlin. Low dark count rate InGaAsP/InP SPAD[J]. Infrared and Laser Engineering, 2017, 46(12): 1220001-1220001(7). doi: 10.3788/IRLA201746.1220001
Citation: Shi Zhu, Dai Qian, Song Haizhi, Xie Heping, Qin Wenzhi, Deng Jie, Ke Zungui, Kong Fanlin. Low dark count rate InGaAsP/InP SPAD[J]. Infrared and Laser Engineering, 2017, 46(12): 1220001-1220001(7). doi: 10.3788/IRLA201746.1220001
shu

Low dark count rate InGaAsP/InP SPAD

doi: 10.3788/IRLA201746.1220001
  • 1.

    South-West Institute of Technical Physics,Chengdu 610041,China

  • Received Date: 2017-04-05
  • Rev Recd Date: 2017-05-03
  • Publish Date: 2017-12-25
  • The relationship among the characteristics of InGaAsP/InP SPAD, such as photon detection efficiency(PDE) and dark count rate(DCR), and the parameters of the SPAD, like InGaAsP band gap,electric field distribution, avalanche length and operating temperature, was analyzed. The DCR of the SPAD was effectively decreased by using the InxGa1-xAsyP1-y(x=0.78, y=0.47) as photon absorption layer instead of the InxGaAs(x=0.53) and controlling avalanche length of InP multiplication region precisely. According to good lattice matching of InGaAsP and InP, high quality InGaAsP/InP heterojunction was epitaxially grown on InP substrate to detect single photon of 1.06 m, with 1.03 eV band gap and 1.2 m cutoff wavelength. InGaAsP/InP SPAD was designed and manufactured for 1.06 m detection. And measurement results show that DCR is about 20 kHz under 20% PDE on 270 K. The device can detect random arrival photons based on time correlated single photon counting technique under active quenching mode.
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    [2] Dutton N A W, Gyongy I, Parmesan L, et al. A SPAD-based QVGA image sensor for single-photon counting and quanta imaging[J]. IEEE Transactions on Electron Devices, 2016, 63(1):189-196.
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    [4] Keith Forsyth, Noah Clay. Geiger-mode InGaAsP/InP APDs optimized for single photon counting at 1.06m[C]//SPIE, 2006, 6372:63720L.
    [5] Mcintosh K A, Donnelly J P, Oakley D C, et al. InGaAsP/InP avalanche photodiodes for photon counting at 1.06m[J]. Applied Physics Letters, 2002, 81(14):2505-2507.
    [6] Becker W W. Advanced Time-Correlated Single Photon Counting Techniques[M]. 3rd ed. Qu Junle, translated. Beijing:Science Press, 2009:1-402. (in Chinese) Becker W. 高级时间相关单光子计数技术[M]. 第3版. 屈军乐, 译. 北京:科学出版社, 2009:1-402.
    [7] Donnelly J P, Duerr E K, Mcintosh K A, et al. Design considerations for 1.06-m InGaAsP-InP Geiger-mode avalanche photodiodes[J]. IEEE Journal of Quantum Electronics, 2006, 42(8):797-809.
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    [9] Ji Yingjun, Shi Zhu, Qin Wenzhi, et al. Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting[J]. Infrared and Laser Engineering, 2015, 44(3):934-940. (in Chinese)纪应军, 石柱, 覃文治, 等. 用于光子计数的InGaAs/InP SPAD设计[J]. 红外与激光工程, 2015, 44(3):934-940.
    [10] He Weiji, Sima Boyu, Cheng Yaojin, et al. Photon counting imaging based on GM-APD[J]. Optics and Precision Engineering, 2012, 20(8):1831-1837. (in Chinese)何伟基, 司马博羽, 程耀进, 等. 基于盖格-雪崩光电二极管的光子计数成像[J]. 光学精密工程, 2012, 20(8):1831-1837.
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Low dark count rate InGaAsP/InP SPAD

doi: 10.3788/IRLA201746.1220001
  • 1. South-West Institute of Technical Physics,Chengdu 610041,China
  • Received Date: 2017-04-05
  • Rev Recd Date: 2017-05-03
  • Publish Date: 2017-12-25

Abstract: The relationship among the characteristics of InGaAsP/InP SPAD, such as photon detection efficiency(PDE) and dark count rate(DCR), and the parameters of the SPAD, like InGaAsP band gap,electric field distribution, avalanche length and operating temperature, was analyzed. The DCR of the SPAD was effectively decreased by using the InxGa1-xAsyP1-y(x=0.78, y=0.47) as photon absorption layer instead of the InxGaAs(x=0.53) and controlling avalanche length of InP multiplication region precisely. According to good lattice matching of InGaAsP and InP, high quality InGaAsP/InP heterojunction was epitaxially grown on InP substrate to detect single photon of 1.06 m, with 1.03 eV band gap and 1.2 m cutoff wavelength. InGaAsP/InP SPAD was designed and manufactured for 1.06 m detection. And measurement results show that DCR is about 20 kHz under 20% PDE on 270 K. The device can detect random arrival photons based on time correlated single photon counting technique under active quenching mode.

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