Ma Ding, Xu Jintong, Liu Fuhao, Zhang Yan, Li Xiangyang. Visible blind AlGaN 640×8 pixel ultraviolet focal plane arrays with low out-of-band response[J]. Infrared and Laser Engineering, 2018, 47(S1): 99-104. doi: 10.3788/IRLA201746.S120001
| Citation:
|
Ma Ding, Xu Jintong, Liu Fuhao, Zhang Yan, Li Xiangyang. Visible blind AlGaN 640×8 pixel ultraviolet focal plane arrays with low out-of-band response[J]. Infrared and Laser Engineering, 2018, 47(S1): 99-104. doi: 10.3788/IRLA201746.S120001
|
Visible blind AlGaN 640×8 pixel ultraviolet focal plane arrays with low out-of-band response
-
Ma Ding1,2,3
,
-
Xu Jintong1,2
,
-
Liu Fuhao1,2
,
-
Zhang Yan1,2
,
-
Li Xiangyang1,2
- 1.
State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
- 2.
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
- 3.
University of Chinese Academy of Sciences,Beijing,100049,China
- Received Date: 2018-02-10
- Rev Recd Date:
2018-05-20
- Publish Date:
2018-06-25
-
Abstract
Out-of-band response is a very important parameter of UVFPA detectors. As a wide-gap semiconductor material, AlGaN based ultraviolet detector exhibits excellent performance of the out-of-band response and rejection in ultraviolet detection. Visible blind AlGaN 6408 pixel ultraviolet focal plane arrays (UVFPA) detector was reported, whose spectral response range is 345-363.5 nm. To characterize the out-of-band response of the detector over a wide spectral range, by monochromatic spectral scanning, a response spectrum of the UVFPA was obtained with a wide range from UV to near IR. The result shows that the UVFPA detector has an excellent performance of out-of-band response. The ratio is 1.14% over the whole spectral band from 300 to 1 160 nm.
-
References
|
[1]
|
Chen W. Optimal out-of-band correction for multispectral remote sensing[J]. IEEE Transactions on Geoscience Remote Sensing, 2012, 51(33):7962-7968. |
|
[2]
|
Gao B C, Chen W. Multispectral decomposition for the removal of out-of-band effects of visible/infrared imaging radiometer suite visible and near-infrared bands[J]. Applied Optics, 2012, 51(18):4078-4086. |
|
[3]
|
Gordon H R. Remote sensing of ocean color:a methodology for dealing with broad spectral bands and significant out-of-band response[J]. Applied Optics, 1995, 34(36):8363-8374. |
|
[4]
|
Kelcey J, Lucieer A. Sensor correction of a 6-band multispectral imaging sensor for UAV remote sensing[J]. Remote Sensing, 2012, 4(5):1462-1493. |
|
[5]
|
Zhang Y, Chu K, Shao X. GaN-based 5121 ultroviolet linear focal plane arrays[J]. Acta Optica Sinica, 2009, 29(12):3515-3518. |
|
[6]
|
Rogalski A, Razeghi M. Semiconductor ultraviolet photodetectors[J]. Opto-Electronics Review, 1996, 4(13):13-30. |
|
[7]
|
Brosch N. Exotic UV astronomy[J]. Astrophysics Space Science, 2009, 320(1-3):207-215. |
|
[8]
|
Monroy E, Hamilton M, Walker D. High-quality visible-blind AlGaN p-i-n photodiodes[J]. Applied Physics Letter, 1999, 74(8):1171-1173. |
|
[9]
|
Shur M S, Gaska R, Bykhovski A. GaN-based electronic devices[J]. Solid-State Electronics, 1999, 43(8):1451-1458. |
|
[10]
|
Walker D, Saxler A, Kung P. Visible blind GaN pin photodiodes[J]. Applied Physics Letters, 1998, 72(25):3303-3305. |
|
[11]
|
Wang R, Ruden P P, Kolink J. Dielectric properties of wurtzite and zincblende structure gallium nitride[J]. Journal of Physics and Chemistry of Solids, 1997, 58(6):913-918. |
|
[12]
|
Zhang X, Kung P, Walker D. Photovoltaic effects in GaN structures with p-n junctions[J]. Applied Physics Letters, 1995, 67(14):2028-2030. |
|
[13]
|
Yun F, Reshchikov M A, He L. Energy band bowing parameter in AlxGa1-xN alloys[J]. Journal of Applied Physics, 2002, 92(8):4837-4839. |
|
[14]
|
Li C, Bao X, Xu J. Optical characterization of GaN/AlGaN bilayer by transmission and reflection spectra[J]. Journal of Applied Physics, 2013, 108(6):063104. |
-
-
Proportional views
-
DownLoad: