Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering

Wang Lishuan; Yang Xiao; Liu Dandan; Jiang Chenghui; Liu Huasong; Ji Yiqin; Zhang Feng; Fan Rongwei; Chen Deying

doi:10.3788/IRLA201847.0321004

The effect of annealing in atmospheric environment on Ta2O5 thin films was researched, which were prepared by ion beam sputtering. The annealing temperatures ranged from 150℃ to 550℃, and the interval was 200℃. The optical band gap (1-4 eV) of the Ta2O5 thin film was characterized by the Cody-Lorentz dielectric model. And the microstructure vibration was characterized by the oscillator model in the range of infrared region(400-4 000 cm-1). The results show that the turning point of the annealing temperature appeared between 150℃ and 350℃. The extinction coefficient of the thin film increased when the annealing temperature was above the turning point. The variation of Urbach energy was in accordance with the extinction coefficient, but the variation of band gap was opposite. By analyzing the microstructure vibration in infrared, it's found that the stoichiometry defect of the protoxide was in the Ta2O5 films.

Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering

1. National Key Laboratory of Science and Technology on Tunable Laser,Harbin Institute of Technology,Harbin 150001,China;

2. Tianjin Key Laboratory of Optical Thin Film,Tianjin Jinhang Institute of Technical Physics,HIWING Technology Academy of CASIC,Tianjin 300308,China

Received Date: 2017-10-10

Rev Recd Date: 2017-11-20

Publish Date: 2018-03-25

Key words:

Abstract: The effect of annealing in atmospheric environment on Ta2O5 thin films was researched, which were prepared by ion beam sputtering. The annealing temperatures ranged from 150℃ to 550℃, and the interval was 200℃. The optical band gap (1-4 eV) of the Ta2O5 thin film was characterized by the Cody-Lorentz dielectric model. And the microstructure vibration was characterized by the oscillator model in the range of infrared region(400-4 000 cm-1). The results show that the turning point of the annealing temperature appeared between 150℃ and 350℃. The extinction coefficient of the thin film increased when the annealing temperature was above the turning point. The variation of Urbach energy was in accordance with the extinction coefficient, but the variation of band gap was opposite. By analyzing the microstructure vibration in infrared, it's found that the stoichiometry defect of the protoxide was in the Ta2O5 films.

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Reference (12)

[1]	Detlev Ristau, Tobias Gross. Ion beam sputter coatings for laser technology[C]//SPIE, 2005, 5963:596313.
[2]	Yoon S G, Kanga S M, Junga W S, et al. Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering[J]. Thin Solid Films, 2008, 516(11):3582-3585.
[3]	Demiryont H, Sites J R, Geib K. Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering[J]. Applied Optics, 1985, 24(4):490-495.
[4]	Yoon S G, Kang S M, Yoon D H. Post-annealing effects on the structural properties and residual stress of Ta2O5 thin films deposited by ion beam sputtering[J]. Journal of Optoelectronics Advanced Materials, 2007, 9(5):1246-1249.
[5]	Masse J P, Szymanowski H, Zabeida O, et al. Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5, and Nb2O5, films[J]. Thin Solid Films, 2006, 515(4):1674-1682.
[6]	Chandra S V J, Rao G M, Uthanna S. Heat treatment induced structural and optical properties of rf magnetron sputtered tantalum oxide films[J]. Crystal Research Technology, 2007, 42(3):290-294.
[7]	Liu Huasong, Jiang Chenghui, Wang Lishuan, et al. Effects of annealing on properties of Ta2O5 thin films deposited by ion beam sputtering[J]. Optics Precision Engineering, 2014, 22(10):2645-2651. (in Chinese)刘华松, 姜承慧, 王利栓,等. 热处理对离子束溅射Ta2O5薄膜特性的影响[J]. 光学精密工程, 2014, 22(10):2645-2651.
[8]	Ferlauto A S, Ferreira G M, Pearce J M, et al. Analytical model for the optical functions of amorphous semiconductors from the near infrared to ultraviolet:Applications in thin film photovoltaics[J]. Journal of Applied Physics, 2002, 92(5):2424-2436.
[9]	Liu Huasong, Ji Yiqin, Zhang Feng, et al. Dispersive properties of optical constants of some metallic oxide thin films in the near infrared regions[J]. Acta Optica Sinica, 2014, 34(8):0831003. (in Chinese)刘华松, 季一勤, 张锋, 等. 金属氧化物薄膜在中波红外光谱区内光学常数色散特性[J]. 光学学报, 2014, 34(8):0831003.
[10]	Ji Yiqin, Jiang Yugang, Liu Huasong, et al. Analysis on effects of thermal treatment on structural characteristic of ion beam sputtering SiO2 films[J]. Infrared and Laser Engineering, 2013, 42(2):418-422. (in Chinese)季一勤, 姜玉刚, 刘华松, 等. 热处理对离子束溅射SiO2薄膜结构特性的影响分析[J]. 红外与激光工程, 2013, 42(2):418-422.
[11]	Bright T J, Watjen J I, Zhang Z M, et al. Infrared optical properties of amorphous and nanocrystalline Ta2O5 thin films[J]. Journal of Applied Physics, 2013, 114(8):083515.
[12]	Klemberg-Sapieha J E, Oberste-Berghaus J, Martinu L, et al. Mechanical characteristics of optical coatings prepared by various techniques:a comparative study.[J]. Applied Optics, 2004, 43(13):2670-2679.

Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering

doi: 10.3788/IRLA201847.0321004

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