Volume 47 Issue 6
Jul.  2018
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Leng Jian, Ji Yiqin, Liu Huasong, Zhuang Kewen, Liu Dandan. Influence of thermal annealing on mechanical and thermoelastic characteristics of SiO2 films produced by DIBS[J]. Infrared and Laser Engineering, 2018, 47(6): 621002-0621002(6). doi: 10.3788/IRLA201847.0621002
Citation: Leng Jian, Ji Yiqin, Liu Huasong, Zhuang Kewen, Liu Dandan. Influence of thermal annealing on mechanical and thermoelastic characteristics of SiO2 films produced by DIBS[J]. Infrared and Laser Engineering, 2018, 47(6): 621002-0621002(6). doi: 10.3788/IRLA201847.0621002

Influence of thermal annealing on mechanical and thermoelastic characteristics of SiO2 films produced by DIBS

doi: 10.3788/IRLA201847.0621002
  • Received Date: 2018-01-05
  • Rev Recd Date: 2018-02-11
  • Publish Date: 2018-06-25
  • Mechanical and thermoelastic charecteristics of optical films are important to ensure the performance of optical coating systems. SiO2 films were prepared by dual ion beam sputtering (DIBS) on Si 110 and Schott Q1. The mechanical and thermoelastic properties of films as-deposited and annealed were systematically investigated. The results show that reduced Young's modulus (Er) is elevated to 72 GPa while the film was annealed at 750℃, and hardness (H) increases to over 10 GPa. The as-deposited films show compressive stress and the stress could be dramatically released while annealed over 450℃, incicating that heat treatment could improve the internal stress of SiO2 film. Poisson's ratio (vf) of annealed SiO2 films is around 0.18, and Young's modulus (Ef) of as-deposited and annealed films is larger than that of fused silica, and elevated over 50 GPa while annealed at 750℃. Thermal expansion coefficient (f) decreases from 6.7810-7℃-1 to the minimum value 5.2210-7℃-1 while annealed at 550℃.
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    [2] Liu Huasong, Wang Lishuan, Jiang Yugang, et al. Adjustments of refractive index and stress of SiO2 films prepared by IBS technology[J]. Optics and Precision Engineering, 2013, 21(9):2238-2243. (in Chinese)
    [3] Ma Hongping, Cheng Xinbin, Zhang Jinlong, et al. Damage growth characteristics of artificial nodules prepared by different processes[J]. Infrared and Laser Engineering, 2017, 46(5):0521001. (in Chinese)
    [4] Lu J Y, Zhao Q N, Hou S H, et al. Study on antireflection of TiO2-SiO2/SiO2 double-layer films prepared by sol-gel method[J]. Adv Mater Res, 2012, 591-593:1012-1016.
    [5] Cai Xikun, Zhang Lichao, Shi Guang, et al. Low stress DUV optical coatings deposited by ion beam sputtering[J]. Chinese Optics, 2016, 9(6):649-655. (in Chinese)
    [6] Liu Huasong, Jiang Chenghui, Wang Lishuan, et al. Effects of annealing on properties of Ta2O5 thin films deposited by ion beam sputtering[J]. Optics and Precision Engineering, 2014, 22(11):2645-2651. (in Chinese)
    [7] Jiang Yugang, Wang Lishuan, Liu Huasong, et al. Analysis on effects of thermal treatment on refractive index and absorption properties of SiO2 film[J]. Infrared and Laser Engineering, 2014, 43(4):3334-3337. (in Chinese)
    [8] Ji Yiqin, Jiang Yugang, Liu Huasong, et al. Analysis on effects of thermal treatment on structural characteristic of ion beam sputtering SiO2 films[J]. Infrared and Laser Engineering, 2013, 42(2):418-422. (in Chinese)
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Influence of thermal annealing on mechanical and thermoelastic characteristics of SiO2 films produced by DIBS

doi: 10.3788/IRLA201847.0621002
  • 1. Tianjin Key Laboratory of Optical Thin Films,Tianjin Jinhang Institute of Technical Physics,Tianjin 300300,China

Abstract: Mechanical and thermoelastic charecteristics of optical films are important to ensure the performance of optical coating systems. SiO2 films were prepared by dual ion beam sputtering (DIBS) on Si 110 and Schott Q1. The mechanical and thermoelastic properties of films as-deposited and annealed were systematically investigated. The results show that reduced Young's modulus (Er) is elevated to 72 GPa while the film was annealed at 750℃, and hardness (H) increases to over 10 GPa. The as-deposited films show compressive stress and the stress could be dramatically released while annealed over 450℃, incicating that heat treatment could improve the internal stress of SiO2 film. Poisson's ratio (vf) of annealed SiO2 films is around 0.18, and Young's modulus (Ef) of as-deposited and annealed films is larger than that of fused silica, and elevated over 50 GPa while annealed at 750℃. Thermal expansion coefficient (f) decreases from 6.7810-7℃-1 to the minimum value 5.2210-7℃-1 while annealed at 550℃.

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