Volume 47 Issue 10
Oct.  2018
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Article Navigation >  Infrared and Laser Engineering  > 2018  >  47(10): 1003003-1003003(7)

Zhang Yi, Zhang Yu, Yang Cheng'ao, Xie Shengwen, Shao Fuhui, Shang Jinming, Huang Shushan, Yuan Ye, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 3-4μm antimonide interband cascade laser (invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003003-1003003(7). doi: 10.3788/IRLA201847.1003003
Citation: Zhang Yi, Zhang Yu, Yang Cheng'ao, Xie Shengwen, Shao Fuhui, Shang Jinming, Huang Shushan, Yuan Ye, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 3-4μm antimonide interband cascade laser (invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003003-1003003(7). doi: 10.3788/IRLA201847.1003003
shu

Research progress of 3-4μm antimonide interband cascade laser (invited)

doi: 10.3788/IRLA201847.1003003
  • 1.

    State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;

  • 2.

    College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

  • Received Date: 2018-05-07
  • Rev Recd Date: 2018-06-12
  • Publish Date: 2018-10-25
  • The mid-infrared lasers of 3-4 m can be widely used in industrial gas detection, medical treatment and free space optical communication. At present, the antimonide semiconductor interband cascade laser is an ideal scheme for realizing 3-4 m in the middle infrared band. The interband cascade laser (ICL) may be considered the hybrid of a conventional diode laser that generates photons via electron-hole recombination, and an intersubband-based quantum cascade laser (QCL) that stacks multiple stages for enhanced current efficiency. This paper gives an overview of the basic working principle of inter-band cascade lasers, and describes the development history of major inter-band cascade lasers, including the University of Oklahoma, the US Naval Laboratory, and the University of Woodsburg. The performance of the interband cascade laser developed by the Institute of Semiconductors of the Chinese Academy of Sciences is also included. By analyzing the difficulties in designing and preparing the laser, the technical solution to further improve the performance of this kind of lasers is expounded.
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    [3] Gaimard Q, Nguyen-Ba T, Larrue A, et al. Distributed-feedback GaSb-based laser diodes in the 2.3 to 3.3m wavelength range[J]. Semiconductor Lasers and Laser Dynamics Vi, 2014, 9134:2052115.
    [4] Yang R Q, Pei S S J. Novel type-Ⅱ quantum cascade lasers[J]. J Appl Phys, 1996, 79(11):8197-8203.
    [5] Meyer J R, Ho_man C A, Bartoli F J, et al. Type-Ⅱ quantum-well lasers for the mid-wavelength infrared[J]. Appl Phys Lett, 1995, 67(6):757-759.
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    [9] Lin Chih-Hsiang, Yang Q, Zhang D, et al. Type Ⅱ interband quantum cascade laser at 3.8m[J]. Electronics Letters, 2015, 33(7):598-599.
    [10] Yang R Q, Bruno J D, Bradshaw J L, et al. High-power interband cascade lasers with quantum efficiency 450%[J]. Electronics Letters, 1999, 35(15):1254-1255.
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    [12] Bradshaw J L, Bruno J D, Pham J T, et al. Continuous wave operation of type-Ⅱ interband cascade lasers[J].IEEE Proc Optoelectron, 2000, 147:177-180.
    [13] Bruno J D, Bradshaw J L, Yang R Q, et al. Low-threshold interband cascade lasers with power efficiency exceeding 9%[J]. Appl Phys Lett, 2000, 76(22):3167-3169.
    [14] Bradshaw J L, Pham J T, Yang R Q, et al. Enhanced CW performance of the interband cascade laser using improved device fabrication[J]. IEEE J Select Top Quantum Electron, 2001, 37(2):102-105.
    [15] Yang R Q, Bradshaw J L, Bruno J D, et al. Power, efficiency, and thermal characteristics of type-Ⅱ interband cascade lasers[J]. IEEE J Select Top Quantum Elctron, 2001, 37(2):282-289.
    [16] Yang R Q, Bradshaw J L, Bruno J D, et al. Room temperature type-Ⅱ interband cascade laser[J].Appl Phys Lett, 2002, 81(3):397-399.
    [17] Yang R Q, Hill C J, Christensen L E, et al. Mid-IR type-Ⅱ interband cascade lasers and their applications[C]//Proc of SPIE, 2005, 5624:413-422.
    [18] Yang R Q, Hill C J, Yang B H. High-temperature and low-threshold midinfrared interband cascade lasers[J]. Appl Phys Lett, 2005, 87(15):151109.
    [19] Hill C J, Yang R Q. MBE growth optimization of Sb-based interband cascade lasers[J]. J Cryst Growth, 2005, 278(1):167-172.
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    [23] Vurgaftman I, Bewley W W, Canedy C L, et al. Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption[J]. Nature Communications, 2011, 2(1):1585-1595.
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Research progress of 3-4μm antimonide interband cascade laser (invited)

doi: 10.3788/IRLA201847.1003003
  • 1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
  • 2. College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
  • Received Date: 2018-05-07
  • Rev Recd Date: 2018-06-12
  • Publish Date: 2018-10-25

Abstract: The mid-infrared lasers of 3-4 m can be widely used in industrial gas detection, medical treatment and free space optical communication. At present, the antimonide semiconductor interband cascade laser is an ideal scheme for realizing 3-4 m in the middle infrared band. The interband cascade laser (ICL) may be considered the hybrid of a conventional diode laser that generates photons via electron-hole recombination, and an intersubband-based quantum cascade laser (QCL) that stacks multiple stages for enhanced current efficiency. This paper gives an overview of the basic working principle of inter-band cascade lasers, and describes the development history of major inter-band cascade lasers, including the University of Oklahoma, the US Naval Laboratory, and the University of Woodsburg. The performance of the interband cascade laser developed by the Institute of Semiconductors of the Chinese Academy of Sciences is also included. By analyzing the difficulties in designing and preparing the laser, the technical solution to further improve the performance of this kind of lasers is expounded.

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