Experimental and theoretical study of the bistable InGaAsP multi-quantum-well lasers

Xu Yulan; Lin Zhongxi; Chen Jingyuan; Lin Qi; Wang Linghua; Su Hui

doi:10.3788/IRLA201847.1105004

Influences of the bias states of saturable absorbers on bistable InGaAsP multi-quantum-well(MQW) common cavity tandem section(CCTS) semiconductor lasers were investigated experimentally and theoretically. The experiment demonstrated that the bistability characteristic of P-I curves can be more significant with increasing reversed bias voltage in the saturable absorber(SA), and a negative differential resistance phenomenon was found in V-I curves. When the voltage was -3 V, the hysteresis width was broadened to 13.5 mA, with the on-off ratio up to 21:1. The theoretical analysis proves that higher passive voltage in SA and shorter carrier escape time can result in better bistability. The maximum on-off ratio as high as 107:1 promises that a common cavity two-section laser can be switching between the two-steady state.

Experimental and theoretical study of the bistable InGaAsP multi-quantum-well lasers

1. Laboratory of Laser Engineering and Technology,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;

2. University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2018-06-05

Rev Recd Date: 2018-07-03

Publish Date: 2018-11-25

Key words:

Abstract: Influences of the bias states of saturable absorbers on bistable InGaAsP multi-quantum-well(MQW) common cavity tandem section(CCTS) semiconductor lasers were investigated experimentally and theoretically. The experiment demonstrated that the bistability characteristic of P-I curves can be more significant with increasing reversed bias voltage in the saturable absorber(SA), and a negative differential resistance phenomenon was found in V-I curves. When the voltage was -3 V, the hysteresis width was broadened to 13.5 mA, with the on-off ratio up to 21:1. The theoretical analysis proves that higher passive voltage in SA and shorter carrier escape time can result in better bistability. The maximum on-off ratio as high as 107:1 promises that a common cavity two-section laser can be switching between the two-steady state.

HTML

Reference (15)

[1]	Zhang Qian, Zhang Peiqing, Zeng Jianghui, et al. Mid-infrared fiber grating optical switch of Ge20As20Se15Te45 chalcogenide glass[J]. Infrared and Laser Engineering, 2017, 46(7):0720002. (in Chinese)
[2]	Lasher G J. Analysis of a proposed bistable injection laser[J]. Solid-State Electronics, 1964, 7(10):707-716.
[3]	Li Zhen, Luo Chao, Lu Tengteng, et al. Infrared single photon detection system based on parallel avalanche photodiode array[J]. Optics and Precision Engineering, 2016, 24(10S):0006.
[4]	Jiang Guoqing, Xu Chen, Xie Yiyang, et al. Fabrication of proton-implanted photonic crystal vertical cavity surface emitting laser[J]. Infrared and Laser Engineering, 2016, 45(12):1205001. (in Chinese)
[5]	Ding Xiangdong, He Wei, Yao Qifeng, et al. Switchable erbium-doped fiber laser utilizing tunable Mach-Zehnder filter[J]. Infrared and Laser Engineering, 2017, 46(10):1005006. (in Chinese)
[6]	Cai Tongjian, Liu Yunqi, Zhang Xiaobei, et al. Generation of tunable multi-wavelength optical short pulses using self-seeded Fabry-Perot laser diode and tilted multimode fiber Bragg grating[J]. Chinese Optics Letters, 2011, 9(4):041403.
[7]	Zhao H, Zhu Y, Li F, et al. Wavelength bistability based on optical injection in a novel tunable dual mode laser[J]. Optics Express, 2016, 24(4):3817-3831.
[8]	Qasaimeh O. Contrast ratio and hysteresis width of optical bistability in quantum-dot vertical-cavity semiconductor optical amplifiers integrated with MEMS membrane[J]. Optical and Quantum Electronics, 2017, 49(3):109.
[9]	Komolibus K, Piwonski T, Reyner C J, et al. Absorption dynamics of type-Ⅱ GaSb/GaAs quantum dots[J]. Opt Mater Express, 2017, 7(4):2707.
[10]	Harder C, Lau K Y Yariv A. Bistability and pulsations in semiconductor lasers with inhomogeneous current injection[J]. IEEE Journal of Quantum Electronics, 1982, 18(9):1351-1361.
[11]	Uenohara H, Takahashi R, Kawamura Y, et al. Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes[J]. IEEE Journal of Quantum Electronics, 1996, 32(5):873-883.
[12]	Huang X D, Stintz A, Li H, et al. Bistable operation of a two-section 1.3m InAs quantum dot laser -absorption saturation and the quantum confined stark effect[J]. IEEE Journal of Quantum Electronics, 2001, 37(3):414-417.
[13]	Jiang Liwen, Ye Xiaoling, Zhou Xiaolong, et al. Optical bistability in a two-section InAs quantum-dot laser[J]. Journal of Semiconductors, 2010, 31(11):114012.
[14]	Li Jianmeng, Peng Huaide, Wang Qiming, et al. GaAs/AlGaAs single quantum well (SQW) bistable laser[J]. Chinese Journal of Semiconductors, 1990, 11(6):478-481.
[15]	Malins D B, Gomez-Iglesias A, White S J, et al. Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3m[J]. Applied Physics Letters, 2006, 89(17):171111.

Experimental and theoretical study of the bistable InGaAsP multi-quantum-well lasers

doi: 10.3788/IRLA201847.1105004

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views